Enhanced superconductivity of Ba0.5K0.5Fe2As2 under surface potassium dosing.

Surface potassium dosing has been proven to be an effective method in tuning the electron doping and enhancing the superconducting transition temperatures in both iron chalcogenides and electron doped iron pnictides. However, it is not clear how surface potassium dosing affects the hole doping and superconductivity in hole doped Fe-based superconductors. Here we performed K-dosing on Ba0.5K0.5Fe2As2, a prototypical hole-doped iron pnictide compound, and explored the electronic structure by in situ angle-resolved photoemission spectroscopy measurements. Starting from the slightly over-doped Ba0.5K0.5Fe2As2, surface K-dosing effectively reduces the hole concentration towards optimal doping and enhances the superconductivity. Intriguingly, the enhancement of superconductivity does not slow down at optimal doping, and the gap further increases with K dosing even when the carrier doping effect is saturated. Meanwhile, the quasiparticle coherence of the inner hole pockets is enhanced by higher K dosing. Our results uncover a novel scattering-reduction effect of K-dosing in Ba1-x K x Fe2As2, which collaborates with the carrier doping effect and enhances superconductivity.

Superconductivity across Lifshitz transition and anomalous insulating state in surface K-dosed (Li0.8Fe0.2OH)FeSe.

In iron-based superconductors, understanding the relation between superconductivity and electronic structure upon doping is crucial for exploring the pairing mechanism. Recently, it was found that, in iron selenide (FeSe), enhanced superconductivity (Tc of more than 40 K) can be achieved via electron doping, with the Fermi surface only comprising M-centered electron pockets. By using surface K dosing, scanning tunneling microscopy/spectroscopy, and angle-resolved photoemission spectroscopy, we studied the electronic structure and superconductivity of (Li0.8Fe0.2OH)FeSe in the deep electron-doped regime. We find that a Γ-centered electron band, which originally lies above the Fermi level (EF), can be continuously tuned to cross EF and contribute a new electron pocket at Γ. When this Lifshitz transition occurs, the superconductivity in the M-centered electron pocket is slightly suppressed, and a possible superconducting gap with a small size (up to ~5 meV) and a dome-like doping dependence is observed on the new Γ electron pocket. Upon further K dosing, the system eventually evolves into an insulating state. Our findings provide new clues to understand superconductivity versus Fermi surface topology and the correlation effect in FeSe-based superconductors.

A metallic mosaic phase and the origin of Mott-insulating state in 1T-TaS2.

Electron-electron and electron-phonon interactions are two major driving forces that stabilize various charge-ordered phases of matter. In layered compound 1T-TaS2, the intricate interplay between the two generates a Mott-insulating ground state with a peculiar charge-density-wave (CDW) order. The delicate balance also makes it possible to use external perturbations to create and manipulate novel phases in this material. Here, we study a mosaic CDW phase induced by voltage pulses, and find that the new phase exhibits electronic structures entirely different from that of the original Mott ground state. The mosaic phase consists of nanometre-sized domains characterized by well-defined phase shifts of the CDW order parameter in the topmost layer, and by altered stacking relative to the layers underneath. We discover that the nature of the new phase is dictated by the stacking order, and our results shed fresh light on the origin of the Mott phase in 1T-TaS2.

Gate-tunable phase transitions in thin flakes of 1T-TaS2.

The ability to tune material properties using gating by electric fields is at the heart of modern electronic technology. It is also a driving force behind recent advances in two-dimensional systems, such as the observation of gate electric-field-induced superconductivity and metal-insulator transitions. Here, we describe an ionic field-effect transistor (termed an iFET), in which gate-controlled Li ion intercalation modulates the material properties of layered crystals of 1T-TaS2. The strong charge doping induced by the tunable ion intercalation alters the energetics of various charge-ordered states in 1T-TaS2 and produces a series of phase transitions in thin-flake samples with reduced dimensionality. We find that the charge-density wave states in 1T-TaS2 collapse in the two-dimensional limit at critical thicknesses. Meanwhile, at low temperatures, the ionic gating induces multiple phase transitions from Mott-insulator to metal in 1T-TaS2 thin flakes, with five orders of magnitude modulation in resistance, and superconductivity emerges in a textured charge-density wave state induced by ionic gating. Our method of gate-controlled intercalation opens up possibilities in searching for novel states of matter in the extreme charge-carrier-concentration limit.