Determination of the dynamic Young's modulus of quantum materials in piezoactuator-driven uniaxial pressure cells using a low-frequency AC method.

We report on a new technique for measuring the dynamic Young's modulus, E, of quantum materials at low temperatures as a function of static tuning strain, ϵ, in piezoactuator-driven pressure cells. In addition to a static tuning of stress and strain, we apply a small-amplitude, finite-frequency AC (1 Hz ≲ ω ≲ 1000 Hz) uniaxial stress, σac, to the sample and measure the resulting AC strain, ϵac, using a capacitive sensor to obtain the associated modulus E. We demonstrate the performance of the new technique through proof-of-principle experiments on the unconventional superconductor Sr2RuO4, which is known for its rich temperature-strain phase diagram. In particular, we show that the magnitude of E, measured using this AC technique at low frequencies, exhibits a pronounced nonlinear elasticity, which is in very good agreement with previous Young's modulus measurements on Sr2RuO4 under [1 0 0] strain using a DC method [Noad et al., Science 382, 447-450 (2023)]. By combining the new AC Young's modulus measurements with AC elastocaloric measurements in a single measurement, we demonstrate that these AC techniques are powerful in detecting small anomalies in the elastic properties of quantum materials. Finally, using the case of Sr2RuO4 as an example, we demonstrate how the imaginary component of the modulus can provide additional information about the nature of ordered phases.

Probing Momentum-Dependent Scattering in Uniaxially Stressed Sr_{2}RuO_{4} through the Hall Effect.

The largest Fermi surface sheet of the correlated metal Sr_{2}RuO_{4} can be driven through a Lifshitz transition between an electronlike and an open geometry by uniaxial stress applied along the [100] lattice direction. Here, we investigate the effect of this transition on the longitudinal resistivity ρ_{xx} and the Hall coefficient R_{H}. ρ_{xx}(T), when Sr_{2}RuO_{4} is tuned to this transition, is found to have a T^{2}logT form, as expected for a Fermi liquid tuned to a Lifshitz transition. R_{H} is found to become more negative as the Fermi surface transitions from an electronlike to an open geometry, opposite to general expectations from this change in topology. The magnitude of the change in R_{H} implies that scattering changes throughout the Brillouin zone, not just at the point in k space where the transition occurs. In a model of orbital-dependent scattering, the electron-electron scattering rate on sections of Fermi surface with xy orbital weight is found to decrease dramatically.

Rigid platform for applying large tunable strains to mechanically delicate samples.

Response to uniaxial stress has become a major probe of electronic materials. Tunable uniaxial stress may be applied using piezoelectric actuators, and so far two methods have been developed to couple samples to actuators. In one, actuators apply force along the length of a free, beam-like sample, allowing very large strains to be achieved. In the other, samples are affixed directly to piezoelectric actuators, allowing the study of mechanically delicate materials. Here, we describe an approach that merges the two: thin samples are affixed to a substrate, which is then pressurized uniaxially using piezoelectric actuators. Using this approach, we demonstrate the application of large elastic strains to mechanically delicate samples: the van der Waals-bonded material FeSe and a sample of CeAuSb2 that was shaped with a focused ion beam.

Locally enhanced conductivity due to the tetragonal domain structure in LaAlO3/SrTiO3 heterointerfaces.

The ability to control materials properties through interface engineering is demonstrated by the appearance of conductivity at the interface of certain insulators, most famously the {001} interface of the band insulators LaAlO3 and TiO2-terminated SrTiO3 (STO; refs 1, 2). Transport and other measurements in this system show a plethora of diverse physical phenomena. To better understand the interface conductivity, we used scanning superconducting quantum interference device microscopy to image the magnetic field locally generated by current in an interface. At low temperature, we found that the current flowed in conductive narrow paths oriented along the crystallographic axes, embedded in a less conductive background. The configuration of these paths changed on thermal cycling above the STO cubic-to-tetragonal structural transition temperature, implying that the local conductivity is strongly modified by the STO tetragonal domain structure. The interplay between substrate domains and the interface provides an additional mechanism for understanding and controlling the behaviour of heterostructures.