Detection of weak absorption changes from molecular events in time-resolved FT-IR spectromicroscopy measurements of single functional cells.

The possibility of performing FT-IR spectromicroscopy experiments on individual living cells is the focus of considerable attention. Among the applications of interest, the obtainment of structural information in rapid measurements, with a time resolution of the minute or better, is a prized goal. In this work, we show that the use of synchrotron FT-IR spectromicroscopy allows one to extract weak spectral changes, of less than 10(-3) au per minute, in the absorption spectrum of single rod cells following photostimulation. We also show that absorption changes are accompanied by other optical effects due to changes in the real part of the refractive index of the cell. The use of two-dimensional correlation spectroscopy allows us to assign bands to specific molecular chromophores and to extract weak spectral variations in the presence of a noisy background.

Effect of thermal treatment on the growth, structure and luminescence of nitride-passivated silicon nanoclusters.

Silicon nanoclusters (Si-ncs) embedded in silicon nitride films have been studied to determine the effects that deposition and processing parameters have on their growth, luminescent properties, and electronic structure. Luminescence was observed from Si-ncs formed in silicon-rich silicon nitride films with a broad range of compositions and grown using three different types of chemical vapour deposition systems. Photoluminescence (PL) experiments revealed broad, tunable emissions with peaks ranging from the near-infrared across the full visible spectrum. The emission energy was highly dependent on the film composition and changed only slightly with annealing temperature and time, which primarily affected the emission intensity. The PL spectra from films annealed for duration of times ranging from 2 s to 2 h at 600 and 800°C indicated a fast initial formation and growth of nanoclusters in the first few seconds of annealing followed by a slow, but steady growth as annealing time was further increased. X-ray absorption near edge structure at the Si K- and L3,2-edges exhibited composition-dependent phase separation and structural re-ordering of the Si-ncs and silicon nitride host matrix under different post-deposition annealing conditions and generally supported the trends observed in the PL spectra.