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2.
Nat Commun ; 9(1): 1958, 2018 05 11.
Article in English | MEDLINE | ID: mdl-29752440

ABSTRACT

The original version of this Article contained errors in Fig. 2, Fig. 3a-c and Supplementary Fig. 2. In Fig. 2g and Supplementary Fig. 2, the band structure plot calculated from density function theory (DFT) had a missing band of mainly z2 character that starts at about - 0.25 eV at the Y point and disperses downwards towards the Γ point. This band was inadvertently neglected when transferring the lines from the original band plot to the enhanced version for publication. Also in Fig. 2g, the points labelled M and Y were not exactly at (1/2 1/2 0) and (0 1/2 0), but rather (0.52 0.48 0) and (0 0.48 0) due to a bug in XCrysDen for low-symmetry structures that the authors failed to identify before publication. Thus, the bands presented were slightly off the true M-Y direction and additional splitting incorrectly appeared (in particular for the highly dispersive bands of x2-y2 character). The correct versions of Fig. 2g (cited as Fig. 1) and Supplementary Fig. 2 (cited as Fig. 2) are:which replaces the previous incorrect version, cited here as Fig. 3 and Fig. 4:Neither of these errors in Fig. 2g or Supplementary Fig. 2 affects either the discussion or any of the interpretations of the ARPES data provided in the paper. The authors discussed the multilayer band splitting along the Γ-M direction (δ band and α band as assigned in the paper), and ARPES did not see any split band. The authors did not discuss the further splitting that arises due to back folding along the M-Y direction.In Fig. 3a-c, the errors in the M and Y points in Fig. 2g cause subtle changes to the DFT dispersions. The correct version of Fig. 3a-c is cited here as Fig 5:which replaces the previous incorrect version (Fig. 6):However, the influence on the effective mass results of Fig. 3d is negligible.These errors have now been corrected in both the PDF and HTML versions of the Article. The authors acknowledge James Rondinelli and Danilo Puggioni from Northwestern University for calling our attention to these issues.

3.
Nat Commun ; 8(1): 704, 2017 09 26.
Article in English | MEDLINE | ID: mdl-28951567

ABSTRACT

Layered nickelates have the potential for exotic physics similar to high T C superconducting cuprates as they have similar crystal structures and these transition metals are neighbors in the periodic table. Here we present an angle-resolved photoemission spectroscopy (ARPES) study of the trilayer nickelate La4Ni3O10 revealing its electronic structure and correlations, finding strong resemblances to the cuprates as well as a few key differences. We find a large hole Fermi surface that closely resembles the Fermi surface of optimally hole-doped cuprates, including its [Formula: see text] orbital character, hole filling level, and strength of electronic correlations. However, in contrast to cuprates, La4Ni3O10 has no pseudogap in the [Formula: see text] band, while it has an extra band of principally [Formula: see text] orbital character, which presents a low temperature energy gap. These aspects drive the nickelate physics, with the differences from the cuprate electronic structure potentially shedding light on the origin of superconductivity in the cuprates.Exploration of the electronic structure of nickelates with similar crystal structure to cuprates may shed a light on the origin of high T c superconductivity. Here, Li et al. report strong resemblances and key differences of the electronic structure of trilayer nickelate La4Ni3O10 compared to the cuprate superconductors.

4.
Nano Lett ; 15(12): 8245-9, 2015 Dec 09.
Article in English | MEDLINE | ID: mdl-26583739

ABSTRACT

Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities, thus making it difficult to probe the quantum regime of the topological surface states. Here, by utilizing a novel buffer layer scheme composed of an In2Se3/(Bi0.5In0.5)2Se3 heterostructure, we introduce a quantum generation of Bi2Se3 films with an order of magnitude enhanced mobilities than before. This scheme has led to the first observation of the quantum Hall effect in Bi2Se3.

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