Thin Films of α-Quartz GeO2 on TiO2-Buffered Quartz Substrates.

α-Quartz (SiO2) is one of the most widely used piezoelectric materials. However, the challenges associated with the control of the crystallization and the growth process limit its production to the hydrothermal growth of bulk crystals. GeO2 can also crystallize into the α-quartz phase, with a higher piezoelectric response and better thermal stability than SiO2. In a previous study, we have found that GeO2 crystallization on nonquartz substrates shows a tendency to form spherulites with a randomized orientation; while epitaxial growth of crystalline GeO2 thin films can take place on quartz (SiO2) substrates. However, in the latter case, the α-ß phase transition that takes place in both substrates and thin films during heating deteriorates the long-range order and, thus, the piezoelectric properties. Here, we report the ousting of spherulitic growth by using a buffer layer. Using TiO2 as a buffer layer, the epitaxial strain of the substrates can be transferred to the growing films, leading to the oriented crystallization of GeO2 in the α-quartz phase. Moreover, since the TiO2 separates the substrates and the thin films, the thermal stability of the GeO2 is kept across the substrate's phase transitions. Our findings reveal the complexity of the crystallization process of quartz thin films and present a way to eliminate the tendency for spherulitic growth of quartz thin films by epitaxial strain.

Thin films of the [Formula: see text]-quartz [Formula: see text] solid solution.

[Formula: see text] with the [Formula: see text]-quartz structure is one of the most popular piezoelectrics. It is widely used in crystal oscillators, bulk acoustic wave (BAW) devices, surface acoustic wave (SAW) devices, and so on. [Formula: see text] can also be crystallized into the [Formula: see text]-quartz structure and it has better piezoelectric properties, with higher piezoelectric coefficient and electromechanical coupling coefficients, than [Formula: see text]. Experiments on bulk crystals and theoretical studies have shown that these properties can be tuned by varying the Si/Ge ratio in the [Formula: see text] solid solution. However, to the best of our knowledge, thin films of [Formula: see text] quartz have never been reported. Here we present the successful crystallization of [Formula: see text] thin films in the [Formula: see text]-quartz phase on quartz substrates ([Formula: see text]) with x up to 0.75. Generally, the films grow semi-epitaxially, with the same orientation as the substrates. Interestingly, the [Formula: see text] composition grows fully strained by the quartz substrates and this leads to the formation of circular quartz domains with an ordered Dauphiné twin structure. These studies represent a first step towards the optimization of piezoelectric quartz thin films for high frequency (> 5 GHz) applications.

Spherulitic and rotational crystal growth of Quartz thin films.

To obtain crystalline thin films of alpha-Quartz represents a challenge due to the tendency for the material towards spherulitic growth. Thus, understanding the mechanisms that give rise to spherulitic growth can help regulate the growth process. Here the spherulitic type of 2D crystal growth in thin amorphous Quartz films was analyzed by electron back-scatter diffraction (EBSD). EBSD was used to measure the size, orientation, and rotation of crystallographic grains in polycrystalline SiO2 and GeO2 thin films with high spatial resolution. Individual spherulitic Quartz crystal colonies contain primary and secondary single crystal fibers, which grow radially from the colony center towards its edge, and fill a near circular crystalline area completely. During their growth, individual fibers form so-called rotational crystals, when some lattice planes are continuously bent. The directions of the lattice rotation axes in the fibers were determined by an enhanced analysis of EBSD data. A possible mechanism, including the generation of the particular type of dislocation(s), is suggested.

Growth and Crystallization of SiO2/GeO2 Thin Films on Si(100) Substrates.

The growth of α-quartz-based piezoelectric thin films opens the door to higher-frequency electromechanical devices than those available through top-down approaches. We report on the growth of SiO2/GeO2 thin films by pulsed laser deposition and their subsequent crystallization. By introducing a devitrifying agent uniformly within the film, we are able to obtain the α-quartz phase in the form of platelets with lateral sizes above 100 µm at accessible temperatures. Films containing different amounts of devitrifying agent are investigated, and their crystallinity is ascertained with X-ray diffraction and electron back-scatter diffraction. Our work highlights the difficulty in crystallization when competing phases arise that have markedly different crystalline orientation.

Morphology of Melt-Quenched Lead Telluride Single Crystals.

Metastable single crystals of nonstoichiometric Pb1-xTe are obtained by rapid cooling from the melt. The composition and crystallographic morphology are studied using X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, and electron backscatter diffraction. Most single crystals have cubic, pyramidal, or hemispherical shapes with sizes ranging from 50 to 400 µm. All crystals adopt the same face-centered cubic rock salt structure, and the crystal growth direction is ⟨100⟩. The bulk part of the rapidly cooled material solidifies in the form of a Te-rich polycrystalline material in which grains are separated by the PbTe-Te eutectic phase. The stabilization of nonstoichiometric Pb1-xTe provides further scope for the optimization of lead telluride-based thermoelectric materials.

Depth Profile Analysis of Thin Oxide Layers on Polycrystalline Fe-Cr.

Surfaces of polycrystalline ferritic Fe-Cr steel with grain sizes of about 13 µm in diameter were investigated with surface sensitive techniques. Thin oxide layers, with a maximum thickness of about 100 nm, were grown by oxidation in air at temperatures up to 450°C and were subsequently characterized using time-of-flight secondary ion mass spectrometry (TOF-SIMS) and atomic force microscopy. Correlative microscopy was applied, which allows for element-specific depth profiles on selected grains with a particular crystal orientation. A strong correlation between the grain orientation and the thickness of the oxide layer was found. The sequence in the oxidation growth rate of ferritic Fe-Cr steel crystal planes is found to be {011} > {111} > {001}, which is unexpectedly opposed to known Fe-based systems. Moreover, for the first time, the Cr/Fe ratio throughout the oxide layer has been determined per grain orientation. A clear order from high to low of {001} > {111} > {011} was detected.

In Situ High-Temperature EBSD and 3D Phase Field Studies of the Austenite-Ferrite Transformation in a Medium Mn Steel.

In this research, in situ high-temperature electron backscattered diffraction (EBSD) mapping is applied to record and analyze the migration of the α/γ interfaces during cyclic austenite-ferrite phase transformations in a medium manganese steel. The experimental study is supplemented with related 3D phase field (PF) simulations to better understand the 2D EBSD observations in the context of the 3D transformation events taking place below the surface. The in situ EBSD observations and PF simulations show an overall transformation behavior qualitatively similar to that measured in dilatometry. The behavior and kinetics of individual austenite-ferrite interfaces during the transformation is found to have a wide scatter around the average interface behavior deduced on the basis of the dilatometric measurements. The trajectories of selected characteristic interfaces are analyzed in detail and yield insight into the effect of local conditions in the vicinity of interfaces on their motion, as well as the misguiding effects of 2D observations of processes taking place in 3D.

Orientation Relationships in Al0.7CoCrFeNi High-Entropy Alloy.

A detailed microstructural evaluation was executed on the crystallographic texture as well as the mechanisms for nucleation, phase transformation, and grain growth in a Al0.7CoCrFeNi high-entropy alloy. The microstructure and crystallographic orientations were characterized by electron backscatter diffraction, and the chemical composition variations by energy-dispersive X-ray spectroscopy. The cast Al0.7CoCrFeNi alloy started in the BCC phase and partially transformed into the FCC phase. It was found that the Pitsch orientation relationship (OR) dominates the nucleation mechanism of the FCC phase; however, deviations with respect to the Pitsch OR are observed and are attributed to the differently sized atoms forming an ordered B2 phase in the alloy causing lattice distortions. The dual phase BCC-FCC microstructure contains FCC Widmanstätten plates oriented parallel to the {110}BCC planes of the parent grain. It was found that the crystal orientation distribution after the BCC-FCC phase transformation is confined and is explained as a product of the governing mechanisms.

Formation of Nanoporous Gold Studied by Transmission Electron Backscatter Diffraction.

Transmission electron backscatter diffraction (t-EBSD) was used to investigate the effect of dealloying on the microstructure of 140-nm thin gold foils. Statistical and local comparisons of the microstructure between the nonetched and nanoporous gold foils were made. Analyses of crystallographic texture, misorientation distribution, and grain structure clearly prove that during the dealloying manufacturing process of nanoporous materials the crystallographic texture is enhanced significantly with a clear decrease of internal strain, whereas maintaining the grain structure.

A new methodology to analyze instabilities in SEM imaging.

This paper presents a statistical method to analyze instabilities that can be introduced during imaging in scanning electron microscopy (SEM). The method is based on the correlation of digital images and it can be used at different length scales. It consists of the evaluation of three different approaches with four parameters in total. The methodology is exemplified with a specific case of internal stress measurements where ion milling and SEM imaging are combined with digital image correlation. It is concluded that before these measurements it is important to test the SEM column to ensure the minimization and randomization of the imaging instabilities. The method has been applied onto three different field emission gun SEMs (Philips XL30, Tescan Lyra, FEI Helios 650) that represent three successive generations of SEMs. Important to note that the imaging instability can be quantified and its source can be identified.