An open circuit voltage decay system for performing injection dependent lifetime spectroscopy.

Of all of the material parameters associated with a semiconductor, the carrier lifetime is by far the most complex and dynamic, being a function of the dominant recombination mechanism, the equilibrium number of carriers, the perturbations in carriers (e.g., carrier injection), and the temperature, to name the most prominent variables. The carrier lifetime is one of the most important parameters in bipolar devices, greatly affecting conductivity modulation, on-state voltage, and reverse recovery. Carrier lifetime is also a useful metric for device fabrication process control and material quality. As it is such a dynamic quantity, carrier lifetime cannot be quoted in a general range such as mobility; it must be measured. The following describes a stand-alone, wide-injection range open circuit voltage decay system with unique lifetime extraction algorithms. The system is initially used along with various lifetime spectroscopy techniques to extract fundamental recombination parameters from a commercial high-voltage PIN diode.

An evaluation system for experimental silicon and silicon carbide super gate turn off thyristors.

This paper describes the design and implementation of a small-scale pulsed power system specifically intended to evaluate the suitability of experimental silicon and silicon carbide high power Super Gate Turn Off thyristors for high action (500 A(2) s and above) pulsed power applications where energy is extracted from a storage element in a rapid and controlled manner. To this end, six of each type of device was placed in a controlled three phase rectifier circuit which was in turn connected to an aircraft ground power motor-generator set and subjected to testing protocols with varying power levels, while parameters such as offset firing angle were varied.

Automated modular high energy evaluation system for experimental thyristor devices.

A high energy, modular, completely automated test bed with integrated data acquisition and characterization systems was successfully designed in order to perform both safe operating area as well as very high volume reliability testing on experimental silicon carbide Super Gate Turn Off (SGTO) thyristors. Although the system follows a modular design philosophy, with each functional block acting as a peripheral to a main control module and can be adapted to arbitrary power and pulse width levels, for the specific SGTO devices initially evaluated it was configured to have the device discharge variable current levels of up to 6 kA into a 0.5 Ω resistive load with a relatively square pulse fixed at 100 µs full width at half maximum delivering energy levels up to 1.8 kJ to the load.