ABSTRACT
As research and development of high-performance devices are becoming increasingly important in the flat panel display industry, new structures and processes are essential to improve the performance of the TFT backplane. Also, high-density plasma systems are needed for new device fabrications. Chlorine-based, inductively-coupled plasma systems are widely used for highly-selective, anisotropic etching of polysilicon layers. In this paper, a plasma simulation for a large-area ICP system (8th glass size and 9 planar antenna set) was conducted using Ar/Cl2 gas. Transport models and Maxwell Equations were applied to calculate the plasma parameters such as electron density, electron temperature and electric potential. In addition, the spatial distribution of ions such as Ar+, Cl2+, Cl-, Cl+ were investigated respectively.
