A 3.06 µm Single-Photon Avalanche Diode Pixel with Embedded Metal Contact and Power Grid on Deep Trench Pixel Isolation for High-Resolution Photon Counting.

In this study, a 3.06 µm pitch single-photon avalanche diode (SPAD) pixel with an embedded metal contact and power grid on two-step deep trench isolation in the pixel is presented. The embedded metal contact can suppress edge breakdown and reduce the dark count rate to 15.8 cps with the optimized potential design. The embedded metal for the contact is also used as an optical shield and a low crosstalk probability of 0.4% is achieved, while the photon detection efficiency is as high as 57%. In addition, the integration of a power grid and the polysilicon resistor on SPAD pixels can help to reduce the voltage drop in anode power supply and reduce the power consumption with SPAD multiplication, respectively, in a large SPAD pixel array for a high-resolution photon-counting image sensor.

A 4.8-µVrms-Noise CMOS-Microelectrode Array With Density-Scalable Active Readout Pixels via Disaggregated Differential Amplifier Implementation.

We demonstrate a 4.8-µVrms noise microelectrode array (MEA) based on the complementary-metal-oxide-semiconductor active-pixel-sensors readout technique with disaggregated differential amplifier implementation. The circuit elements of the differential amplifier are divided into a readout pixel, a reference pixel, and a column circuit. This disaggregation contributes to the small area of the readout pixel, which is less than 81 µm2. We observed neuron signals around 100 µV with 432 electrodes in a fabricated prototype chip. The implementation has technological feasibility of up to 12-µm-pitch electrode density and 6,912 readout channels for high-spatial resolution mapping of neuron network activity.

Twenty-four-micrometer-pitch microelectrode array with 6912-channel readout at 12 kHz via highly scalable implementation for high-spatial-resolution mapping of action potentials.

A 24-µm-pitch microelectrode array (MEA) with 6912 readout channels at 12 kHz and 23.2-µVrms random noise is presented. The aim is to reduce noise in a "highly scalable" MEA with a complementary metal-oxide-semiconductor integration circuit (CMOS-MEA), in which a large number of readout channels and a high electrode density can be expected. Despite the small dimension and the simplicity of the in-pixel circuit for the high electrode-density and the relatively large number of readout channels of the prototype CMOS-MEA chip developed in this work, the noise within the chip is successfully reduced to less than half that reported in a previous work, for a device with similar in-pixel circuit simplicity and a large number of readout channels. Further, the action potential was clearly observed on cardiomyocytes using the CMOS-MEA. These results indicate the high-scalability of the CMOS-MEA. The highly scalable CMOS-MEA provides high-spatial-resolution mapping of cell action potentials, and the mapping can aid understanding of complex activities in cells, including neuron network activities.