Torsional splitting and the four-fold barrier to internal rotation: The rotational spectra of vinylsulfur pentafluoride.

Vinylsulfur pentafluoride (VSPF), a molecule with a four-fold internal rotor, -SF4, has been studied with high resolution Fourier transform microwave spectroscopy. We believe that this is the first report of resolved four-fold internal rotation. As such, we have presented the tools needed to understand and analyze such a problem. These include debugging the ERHAM computer program necessary to fit the spectra and the free rotor to high barrier correlation diagram necessary to understand the torsional states of the four-fold rotor. The A, E, and B torsional state rotational transitions are well resolved and assigned. Spectroscopic transitions of four isotopologues of VSPF, H2C=CH-SF5, the normal isotopologue, and the singly substituted 34S and 13C isotopologues were measured and assigned. Contrary to expectation, the A torsional state could not be fit with only a semi-rigid Hamiltonian. The barrier to internal rotation, V 4, is found to be 227 cm-1. Ab initio calculations at the MP2 aug-cc-pVQZ level of theory and basis set were performed and the results of this calculation are compared to our experimental results.

Alternative search strategy for minimal energy nanocluster structures: the case of rhodium, palladium, and silver.

An alternative strategy to find the minimal energy structure of nanoclusters is presented and implemented. We use it to determine the structure of metallic clusters. It consists in an unbiased search, with a global minimum algorithm: conformational space annealing. First, we find the minima of a many-body phenomenological potential to create a data bank of putative minima. This procedure assures us the generation of a set of cluster configurations of large diversity. Next, the clusters in this data bank are relaxed by ab initio techniques to obtain their energies and geometrical structures. The scheme is successfully applied to magic number 13 atom clusters of rhodium, palladium, and silver. We obtained minimal energy cluster structures not previously reported, which are different from the phenomenological minima. Moreover, they are not always highly symmetric, thus casting some doubt on the customary biased search scheme, which consists in relaxing with density functional theory global minima chosen among high symmetry structures obtained by means of phenomenological potentials.

First-principles calculations of carbon nanotubes adsorbed on Si(001).

We report first-principles calculations on the adsorption of a metallic (6,6) single-walled carbon nanotube (SWCN) on the Si(001) surface. We find stable geometries for the nanotube between two consecutive dimer rows where C-Si chemical bonds are formed. The binding energy in the most stable geometry is found to be 0.2 eV/A. Concerning the electronic properties, the most stable structure shows an increase in the density of states near the Fermi level due to the formation of C-Si bonds enhancing the metallic character of the nanotube by the contact with the surface. These properties may lead one to consider metallic SWCNs adsorbed on Si substrates for interconnections and contacts on future nanoscale devices. Finally, the nature of the nanotube-surface interaction for nanotubes of larger diameters is also discussed.

Oxidation at the Si/SiO2 interface: influence of the spin degree of freedom.

We show, using first-principles spin-polarized total-energy calculations, that depending on the spin configuration of the system, the reaction of an O2 molecule with a Si-Si bond in a suboxidized region might result either in a peroxy linkage defect (for a singlet spin state) or in a perfect Si-O-Si bond plus an interstitial O atom (for a triplet spin state). Even though the singlet has a lower energy than the triplet configuration, we find a rather small probability for triplet to singlet conversion. Therefore, as the O2 in an SiO2 interstitial site has a triplet configuration, this reaction spin dependence may have a strong influence on the high quality of the Si/SiO2 interface.

O2 diffusion in SiO2: triplet versus singlet.

We address the diffusion of the oxygen molecule in SiO2, using first-principles spin-polarized total-energy calculations. We find that the potential energy surfaces for the singlet and triplet states are very different in certain regions, and that the O2 molecule preserves its spin-triplet ground state not only at its most stable interstitial position inside the solid but also throughout its diffusion pathway. Therefore, the singlet state is not a good approximation to describe the behavior of O2 inside SiO2, and spin-polarization effects are fundamental to understand the properties of this system.