Multimode Operation of Organic-Inorganic Hybrid Thin-Film Transistors Based on Solution-Processed Indium Oxide Films.

Solution-processed metal oxide (MO) thin films have been extensively studied for use in thin-film transistors (TFTs) due to their high optical transparency, simplicity of fabrication methods, and high electron mobility. Here, we report, for the first time, the improvement of the electronic properties of solution-processed indium oxide (InOx) films by the subsequent addition of an organic p-type semiconductor material, here 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene), yielding organic-inorganic hybrid TFTs. The addition of TIPS-pentacene not only improves the electron mobility by enhancing the charge carrier percolation pathways but also improves the electronic and temporal stability of the IDS(VG) characteristics as well as reduces the number of required spin-coating steps of the InOx precursor solution. Very interestingly, the introduction of 10 nm TIPS-pentacene films on top of 15 nm InOx layers allows the fabrication of either enhancement- or depletion-mode devices with only minimal changes to the fabrication process. Specifically, we find that when the TIPS-pentacene layer is added on top of the source/drain electrodes, resulting in devices with embedded source/drain electrodes [embedded electrode TFTs (EETFTs)], the devices exhibit an enhancement-mode behavior with an average mobility (µ) of 6.4 cm2 V-1 s-1, a source-drain current ratio (Ion/Ioff) of around 105, and a near-zero threshold voltage (VTH). When on the other hand the TIPS-pentacene layer is added before the source-drain electrodes, i.e., in top-contact electrode TFTs (TCETFTs), a very clear depletion mode behavior is observed with an average µ of 6.3 cm2 V-1 s-1, an Ion/Ioff ratio of over 105, and a VTH of -80.3 V. Furthermore, a logic inverter is fabricated combining the enhancement (EETFTs)- and depletion (TCETFTs)-mode transistors, which shows a potential for the construction of organic-inorganic hybrid electronics and circuits.

Band gap engineering in blended organic semiconductor films based on dielectric interactions.

Blending organic molecules to tune their energy levels is currently being investigated as an approach to engineer the bulk and interfacial optoelectronic properties of organic semiconductors. It has been proven that the ionization energy and electron affinity can be equally shifted in the same direction by electrostatic effects controlled by blending similar halogenated derivatives with different energetics. Here we show that the energy gap of organic semiconductors can also be tuned by blending. We use oligothiophenes with different numbers of thiophene rings as an example and investigate their structure and electronic properties. Photoelectron spectroscopy and inverse photoelectron spectroscopy show tunability of the single-particle gap, with the optical gaps showing similar, but smaller, effects. Theoretical analysis shows that this tuning is mainly caused by a change in the dielectric constant with blend ratio. Further studies will explore the practical impact of this energy-level engineering strategy for optoelectronic devices.

Modulation Doping for Threshold Voltage Control in Organic Field-Effect Transistors.

Organic electronics is the technology enabling truly flexible electronic devices. However, despite continuous improvements in the charge-carrier mobility, devices used for digital circuits based on organic field-effect transistors (OFETs) have still not achieved a commercial breakthrough. A substantial hurdle to the realization of effective digital circuitry is the proper control of the threshold voltage Vth. Previous approaches include doping or self-assembled monolayers to provide the threshold voltage control. However, while self-assembled monolayers-modified OFETs often do not show the level of reproducibility which is required in digital circuit engineering, direct doping of the channel material results in a poor on/off ratio leading to unfavorable power dissipation. Furthermore, direct doping of the channel material in organic semiconductors could cause the formation of trap states impeding the charge-carrier transport. Employing the concept of modulation-doped field-effect transistors (MODFETs), which is well established in inorganic electronics, the semiconductor-dopant interaction is significantly reduced, thereby solving the above-described problems. Here, we present the concept of an organic semiconductor MODFET which is composed of an organic-organic heterostructure between a highly doped wide-energy-gap material and an undoped narrow-energy-gap material. The effectiveness of charge transfer across the interface is controlled by the doping concentration and thickness of an undoped buffer layer. A complete picture of the energy landscape of this heterostructure is drawn using impedance spectroscopy and ultraviolet photoelectron spectroscopy. Furthermore, we analyze the effect of the dopant density on the charge-carrier transport properties. The incorporation of these heterostructures into OFETs enables a precise adjustment of the threshold voltage by using the modulation doping concept.

Impact of molecular quadrupole moments on the energy levels at organic heterojunctions.

The functionality of organic semiconductor devices crucially depends on molecular energies, namely the ionisation energy and the electron affinity. Ionisation energy and electron affinity values of thin films are, however, sensitive to film morphology and composition, making their prediction challenging. In a combined experimental and simulation study on zinc-phthalocyanine and its fluorinated derivatives, we show that changes in ionisation energy as a function of molecular orientation in neat films or mixing ratio in blends are proportional to the molecular quadrupole component along the π-π-stacking direction. We apply these findings to organic solar cells and demonstrate how the electrostatic interactions can be tuned to optimise the energy of the charge-transfer state at the donor-acceptor interface and the dissociation barrier for free charge carrier generation. The confirmation of the correlation between interfacial energies and quadrupole moments for other materials indicates its relevance for small molecules and polymers.

High Electron Affinity Molecular Dopant CN6-CP for Efficient Organic Light-Emitting Diodes.

p-Type molecular doping of organic materials with high ionization energies (IEs) of above 5.50 eV is still a challenge, limiting the use of doping in high-performance organic light-emitting diodes (OLEDs). Here, we investigate the molecular dopant hexacyano-trimethylene-cyclopropane (CN6-CP) with a high electron affinity of 5.87 eV as p-dopant in OLEDs. We show that CN6-CP can be used not only as a dopant in the traditional hole transport material 4,4'-cyclohexylidenebis[ N, N-bis(4-methylphenyl)benzenamine] (TAPC, IE = 5.50 eV) but also effectively dopes the host material tris(4-carbazoyl-9-ylphenyl)amine (TCTA, IE = 5.85 eV), reaching a conductivity of 1.86 × 10-4 S/cm at a molar ratio of 0.25. Using CN6-CP-doped TAPC as hole injection and transport layer, we achieve a low driving voltage of 2.92 V at the practical brightness of 1000 cd/m2 and 3.18 V at a current density of 10 mA/cm2 for a green phosphorescent OLED based on bis[2-(2-pyridinyl- N)phenyl- C](acetylacetonato)iridium(III) (Ir(ppy)2(acac)), together with a maximum external quantum efficiency of 18% and a luminous efficacy of 78 lm/W. The device also exhibits a very low efficiency roll-off at high luminance. Further, by directly adopting CN6-CP-doped TCTA as the injection/transport layer, the driving voltage drops to 2.78 V at 1000 cd/m2 and 2.93 V at 10 mA/cm2. Moreover, conductivity and absorption measurements suggest that CN6-CP could also dope CBP with an IE as high as 6.05 eV. The results show that CN6-CP is an excellent p-type dopant for efficient OLEDs and possesses great potential for future application in organic optoelectronic devices.

Band structure engineering in organic semiconductors.

A key breakthrough in modern electronics was the introduction of band structure engineering, the design of almost arbitrary electronic potential structures by alloying different semiconductors to continuously tune the band gap and band-edge energies. Implementation of this approach in organic semiconductors has been hindered by strong localization of the electronic states in these materials. We show that the influence of so far largely ignored long-range Coulomb interactions provides a workaround. Photoelectron spectroscopy confirms that the ionization energies of crystalline organic semiconductors can be continuously tuned over a wide range by blending them with their halogenated derivatives. Correspondingly, the photovoltaic gap and open-circuit voltage of organic solar cells can be continuously tuned by the blending ratio of these donors.