Periodic corner holes on the Si(111)-7×7 surface can trap silver atoms.

Advancement in nanotechnology to a large extent depends on the ability to manipulate materials at the atomistic level, including positioning single atoms on the active sites of the surfaces of interest, promoting strong chemical bonding. Here, we report a long-time confinement of a single Ag atom inside a corner hole (CH) of the technologically relevant Si(111)-7×7 surface, which has comparable size as a fullerene C60 molecule with a single dangling bond at the bottom center. Experiments reveal that a set of 17 Ag atoms stays entrapped in the CH for the entire duration of experiment, 4 days and 7 h. Warming up the surface to about 150 °C degrees forces the Ag atoms out of the CH within a few minutes. The processes of entrapment and diffusion are temperature dependent. Theoretical calculations based on density functional theory support the experimental results confirming the highest adsorption energy at the CH for the Ag atom, and suggest that other elements such as Li, Na, Cu, Au, F and I may display similar behavior. The capability of atomic manipulation at room temperature makes this effect particularly attractive for building single atom devices and possibly developing new engineering and nano-manufacturing methods.

Nonvortical Rashba Spin Structure on a Surface with C_{1h} Symmetry.

A totally anisotropic peculiar Rashba-Bychkov (RB) splitting of electronic bands was found on the Tl/Si(110)-(1×1) surface with C_{1h} symmetry by angle- and spin-resolved photoelectron spectroscopy and first-principles theoretical calculation. The constant energy contour of the upper branch of the RB split band has a warped elliptical shape centered at a k point located between Γ[over ¯] and the edge of the surface Brillouin zone, i.e., at a point without time-reversal symmetry. The spin-polarization vector of this state is in-plane and points almost the same direction along the whole elliptic contour. This novel nonvortical RB spin structure is confirmed as a general phenomenon originating from the C_{1h} symmetry of the surface.

Valley spin polarization by using the extraordinary Rashba effect on silicon.

The addition of the valley degree of freedom to a two-dimensional spin-polarized electronic system provides the opportunity to multiply the functionality of next-generation devices. So far, however, such devices have not been realized due to the difficulty to polarize the valleys, which is an indispensable step to activate this degree of freedom. Here we show the formation of 100% spin-polarized valleys by a simple and easy way using the Rashba effect on a system with C3 symmetry. This polarization, which is much higher than those in ordinary Rashba systems, results in the valleys acting as filters that can suppress the backscattering of spin-charge. The present system is formed on a silicon substrate, and therefore opens a new avenue towards the realization of silicon spintronic devices with high efficiency.

Experimental and theoretical evidence of a highly ordered two-dimensional Sn/Ag alloy on Si111.

The existence of a highly ordered, two-dimensional, Sn/Ag alloy on Si(111) is reported in this study. We present detailed atomic and electronic structures of the one atomic layer thick alloy, exhibiting a 2 × 2 periodicity. The electronic structure is metallic due to a free-electron-like surface band dispersing across the Fermi level. By electron doping, the electronic structure can be converted into a semiconducting state. A rotated Sn trimer constitutes the key structural element that could be identified by a detailed analysis of constant energy contours derived from the free-electron-like band.