High-Q two-dimensional photonic crystal nanocavity on glass with an upper glass thin film.

We numerically analyze two-dimensional photonic crystal (PhC) nanocavities on glass with a thin glass film on top of the structure. We investigated a multistep heterostructure GaAs PhC nanocavity located on glass. We found that covering the structure even with a very thin glass film efficiently suppresses unwanted polarization mode conversion occurring due to the asymmetric refractive index environment around the PhC. We also uncovered that the glass-covered structure can exhibit a higher Q factor than that observed in the structure symmetrically cladded with thick glass. We point out that the mode mismatch between the PhC nanocavity and modes in the upper glass film largely contributed to the observed Q-factor enhancement. These observations were further analyzed through the comparison among different types of on-glass PhC nanocavities covered with thin glass films. We also discuss that the in-plane structure of the upper glass film is important for additionally enhancing the Q factor of the nanocavity.

Efficient light couplers to topological slow light waveguides in valley photonic crystals.

We numerically and experimentally demonstrate efficient light couplers between topological slow light waveguides in valley photonic crystals (VPhCs) and wire waveguides. By numerical simulations, we obtained a high coupling efficiency of -0.84 dB/coupler on average in the slow light regime of a group index ng = 10 - 30. Experimentally, we fabricated the couplers in a Si slab and measured the transmitted power of the devices. We realized a high coupling efficiency of approximately -1.2 dB/coupler in the slow light region of ng = 10 - 30, which is close to the result from the numerical simulations. These demonstrations will lay the groundwork for low-loss photonic integrated circuits using topological slow light waveguides.

Hybrid distributed Bragg reflector laser on Si with a transfer printed InAs/GaAs quantum dot amplifier.

We demonstrate a hybrid integrated laser by transfer printing an InAs/GaAs quantum dot (QD) amplifier on a Si waveguide with distributed Bragg reflectors (DBRs). The QD waveguide amplifier of 1.6 mm long was patterned in the form of an airbridge with the help of a spin-on-glass sacrificial layer and precisely integrated on the silicon-on-insulator (SOI) waveguide by pick-and-place assembly using an elastomer stamp. Laser oscillation was observed around the wavelength of 1250 nm with a threshold current of 47 mA at room temperature and stable operation up to 80°C. Transfer printing of the long QD amplifiers will enable the development of various hybrid integrated laser devices that leverage superior properties of QDs as laser gain medium.

Optimizing the optical and magneto-optical response of all-dielectric metasurfaces with tilted side walls.

All-dielectric metasurfaces based on ferrimagnetic iron garnets are a promising platform for realizing ultra-compact magneto-optical (MO) devices with low loss. However, ferrimagnetic iron garnets are notorious for being intractable on fine nanopatterning, hindering the faithful fabrication of designed nanostructures. In this regard, it is important to assess the influence of fabrication imperfections on the performance of MO metasurfaces. Here, we investigate the optical properties of a MO metasurface with structural imperfections. As the most typical fabrication error, we studied the impact of the tilted side walls of cylindrical garnet disks that constitute the metasurfaces. We found that tilting the side walls drastically degrades the MO response and light transmittance of the device. Nevertheless, it was also found that the performance can be recovered by optimizing the refractive index of the material covering the upper half of the nanodisks.

Synthetic dimension band structures on a Si CMOS photonic platform.

Synthetic dimensions, which simulate spatial coordinates using nonspatial degrees of freedom, are drawing interest in topological science and other fields for modeling higher-dimensional phenomena on simple structures. We present the first realization of a synthetic frequency dimension on a silicon ring resonator integrated photonic device fabricated using a CMOS process. We confirm that its coupled modes correspond to a one-dimensional tight-binding model through acquisition of up to 280-GHz bandwidth optical frequency comb-like spectra and by measuring synthetic band structures. Furthermore, we realized two types of gauge potentials along the frequency dimension and probed their effects through the associated band structures. An electric field analog was produced via modulation detuning, whereas effective magnetic fields were induced using synchronized nearest- and second nearest-neighbor couplings. Creation of coupled mode lattices and two effective forces on a monolithic Si CMOS device represents a key step toward wider adoption of topological principles.

Unidirectional output from a quantum-dot single-photon source hybrid integrated on silicon.

We report a quantum-dot single-photon source (QD SPS) hybrid integrated on a silicon waveguide embedding a photonic crystal mirror, which reflects photons and enables efficient unidirectional output from the waveguide. The silicon waveguide is constituted of a subwavelength grating so as to maintain the high efficiency even under the presence of stacking misalignment accompanied by hybrid integration processes. Experimentally, we assembled the hybrid photonic structure by transfer printing and demonstrated single-photon generation from a QD and its unidirectional output from the waveguide. These results point out a promising approach toward scalable integration of SPSs on silicon quantum photonics platforms.

Experimental demonstration of topological slow light waveguides in valley photonic crystals.

We experimentally demonstrate topological slow light waveguides in valley photonic crystals (VPhCs). We employed a bearded interface formed between two topologically-distinct VPhCs patterned in an air-bridged silicon slab. The interface supports both topological and non-topological slow light modes below the light line. By means of optical microscopy, we observed light propagation in the topological mode in the slow light regime with a group index ng over 30. Furthermore, we confirmed light transmission via the slow light mode even under the presence of sharp waveguide bends. In comparison between the topological and non-topological modes, we found that the topological mode exhibits much more efficient waveguiding than the trivial one, demonstrating topological protection in the slow light regime. This work paves the way for exploring topological slow-light devices compatible with existing photonics technologies.

Slow light waveguides in topological valley photonic crystals.

Valley photonic crystals (VPhCs) are an attractive platform for the implementation of topologically protected optical waveguides in photonic integrated circuits (PICs). The realization of slow light modes in the topological waveguides may lead to further miniaturization and functionalization of the PICs. In this Letter, we report an approach to realize topological slow light waveguides in semiconductor-slab-based VPhCs. We show that a bearded interface of two topologically distinct VPhCs can support topological kink modes with large group indices over 100 within the topological bandgap. We numerically demonstrate robust light propagation in the topological slow light waveguide with large group indices of ∼60, even under the presence of sharp bends. Our work opens a novel route to implement topological slow light waveguides in a way compatible with current PIC technology.

Spin-dependent directional emission from a quantum dot ensemble embedded in an asymmetric waveguide.

In this study, we examine a photonic wire waveguide embedded with an ensemble of quantum dots (QDs) that directionally emits into the waveguide depending on the spin state of the ensemble. The directional emission is facilitated by the spin-orbit interaction of light. The waveguide has a two-step stair-like cross section and QDs are embedded only in the upper step, such that the circular polarization of emission from the spin-polarized QDs controls the direction of the radiation. We numerically verify that more than 70% of the radiation from the ensemble emitter is toward a specific direction in the waveguide. We also examine a microdisk resonator with a stair-like edge, which supports selective coupling of the QD ensemble radiation into a whispering gallery mode that rotates unidirectionally. Our study provides a foundation for spin-dependent optoelectronic devices.

Scheme for media conversion between electronic spin and photonic orbital angular momentum based on photonic nanocavity.

Light with nonzero orbital angular momentum (OAM) or twisted light is promising for quantum communication applications such as OAM-entangled photonic qubits. Methods and devices for the conversion of the photonic OAM to photonic spin angular momentum (SAM), as well as for the photonic SAM to electronic SAM transformation are known but the direct conversion between the photonic OAM and electronic SAM is not available within a single device. Here, we propose a scheme which converts photonic OAM to electronic SAM and vice versa within a single nanophotonic device. We employed a photonic crystal nanocavity with an embedded quantum dot (QD) which confines an electron spin as a stationary qubit. The confined spin-polarized electrons could recombine with holes to give circularly polarized emission, which could drive the rotation of the nanocavity modes via the strong optical spin-orbit interaction. The rotating modes then radiate light with nonzero OAM, allowing this device to serve as a transmitter. As this can be a unitary process, the time-reversed case enables the device to function as a receiver. This scheme could be generalized to other systems with a resonator and quantum emitters such as a microdisk and defects in diamond for example. Our scheme shows the potential for realizing an (ultra)compact electronic SAM-photonic OAM interface to accommodate OAM as an additional degree of freedom for quantum information purposes.

Thresholdless quantum dot nanolaser.

Thresholdless lasing is an outstanding challenge in laser science and is achievable only in devices having near unity quantum efficiency even when not lasing. Such lasers are expected to exhibit featureless linear light output curves. However, such thresholdless behavior hinders identification of the laser transition, triggering a long-lasting argument on how to identify the lasing. Here, we demonstrate thresholdless lasing in a semiconductor quantum dot nanolaser with a photonic crystal nanocavity. We employ cavity resonant excitation for enabling the thresholdless operation via focused carrier injection into high cavity field regions. Under conventional (above bandgap) excitation, the same nanolaser exhibits a typical thresholded lasing transition, thereby facilitating a systematic comparison between the thresholdless and thresholded laser transitions in the single device. Our approach enables a clear verification of the thresholdless lasing and reveals core elements for its realization using quantum dots, paving the way to the development of ultimately energy-efficient nanolasers.

A Nanowire-Based Plasmonic Quantum Dot Laser.

Quantum dots enable strong carrier confinement and exhibit a delta-function like density of states, offering significant improvements to laser performance and high-temperature stability when used as a gain medium. However, quantum dot lasers have been limited to photonic cavities that are diffraction-limited and further miniaturization to meet the demands of nanophotonic-electronic integration applications is challenging based on existing designs. Here we introduce the first quantum dot-based plasmonic laser to reduce the cross-sectional area of nanowire quantum dot lasers below the cutoff limit of photonic modes while maintaining the length in the order of the lasing wavelength. Metal organic chemical vapor deposition grown GaAs-AlGaAs core-shell nanowires containing InGaAs quantum dot stacks are placed directly on a silver film, and lasing was observed from single nanowires originating from the InGaAs quantum dot emission into the low-loss higher order plasmonic mode. Lasing threshold pump fluences as low as ∼120 µJ/cm(2) was observed at 7 K, and lasing was observed up to 125 K. Temperature stability from the quantum dot gain, leading to a high characteristic temperature was demonstrated. These results indicate that high-performance, miniaturized quantum dot lasers can be realized with plasmonics.

Asymmetric out-of-plane power distribution in a two-dimensional photonic crystal nanocavity.

Conventional air-bridge two-dimensional photonic crystal (2D-PhC) nanocavities emit light with an equal power distribution for upward and downward out-of-plane directions. Some applications, however, require concentration of the radiation in a preferred direction. In this Letter, we design a 2D-PhC nanocavity that radiates dominantly into one of the out-of-plane directions with a narrow far-field distribution. Our design is based on a conventional air-bridge L3 photonic crystal nanocavity. The asymmetric out-of-plane power distribution is achieved solely by adding periodic shallow holes on the slab surface, which also function as a second-order grating for the directional beaming.

Vacuum Rabi spectra of a single quantum emitter.

We report the observation of the vacuum Rabi splitting of a single quantum emitter by measuring its direct spontaneous emission into free space. We use a semiconductor quantum dot inside a photonic crystal nanocavity, in conjunction with an appropriate cavity design and filtering with a polarizer and an aperture, enabling the extraction of the inherently weak emitter's signal. The emitter's vacuum Rabi spectra exhibit clear differences from those measured by detecting the cavity photon leakage. Moreover, we observe an asymmetric vacuum Rabi spectrum induced by interference between the emitter and cavity detection channels. Our observations lay the groundwork for accessing various cavity quantum electrodynamics phenomena that manifest themselves only in the emitter's direct spontaneous emission.

Nanocavity-based self-frequency conversion laser.

Self-frequency conversion (SFC), where both laser oscillation and nonlinear frequency conversion occurs in the same laser crystal, has been used to efficiently extend the operational wavelength of lasers. Downsizing of the cavity mode volume (V) and increasing the quality factor (Q) could lead to a more efficient conversion process, mediated by enhanced n-th order nonlinearities that generally scale as (Q/V)(n). Here, we demonstrate nanocavity-based SFC by utilizing photonic crystal nanocavity quantum dot lasers. The high Q and small V supported in semiconductor-based nanocavities facilitate efficient SFC to generate visible light, even with only a few photons present in the laser cavity. The combined broadband quantum dot gain and small device footprint enables the monolithic integration of 26 different-color nanolasers (spanning 493-627 nm) within a micro-scale region. These nanolasers provide a new platform for studying few-photon nonlinear optics, and for realizing full-color lasers on a single semiconductor chip.

High Q H1 photonic crystal nanocavities with efficient vertical emission.

We report on newly-designed H1-type photonic crystal (PhC) nanocavities that simultaneously exhibit high Q factors, small mode volumes, and high external coupling efficiencies (η([perpendicular])) of light radiated above the PhC membrane. Dipole modes of the H1 PhC nanocavities, which are doubly-degenerate and orthogonally-polarized in theory, are investigated both by numerical calculations and experiments. Through modifying the sizes and positions of the air-holes near to the defect cavity, a Q factor of 62,000 is achieved, accompanied with an improved η([perpendicular]) of 0.38 (assuming an objective lens with a numerical aperture of 0.65). A further increase of η([perpendicular]) to more than 0.60 is observed at the expense of slight degradation of Q factor (down to 50,000). We further experimentally confirm the increase of both Q and η([perpendicular]), using micro-photoluminescence measurements, and demonstrate high Q factors up to 25,000: the highest value ever reported for dipole modes in H1 PhC nanocavities.

Spontaneous two-photon emission from a single quantum dot.

Spontaneous two-photon emission from a solid-state single quantum emitter is observed. We investigated photoluminescence from the neutral biexciton in a single semiconductor quantum dot coupled with a high Q photonic crystal nanocavity. When the cavity is resonant to the half energy of the biexciton, the strong vacuum field in the cavity inspires the biexciton to simultaneously emit two photons into the mode, resulting in clear emission enhancement of the mode. Meanwhile, the suppression of other single photon emission from the biexciton was observed, as the two-photon emission process becomes faster than the others at the resonance.

Photonic crystal nanocavity laser with a single quantum dot gain.

We demonstrate a photonic crystal nanocavity laser essentially driven by a self-assembled InAs/GaAs single quantum dot gain. The investigated nanocavities contain only 0.4 quantum dots on an average; an ultra-low density quantum dot sample (1.5 x 10(8) cm(-2)) is used so that a single quantum dot can be isolated from the surrounding quantum dots. Laser oscillation begins at a pump power of 42 nW under resonant condition, while the far-detuning conditions require ~145 nW for lasing. This spectral detuning dependence of laser threshold indicates substantial contribution of the single quantum dot to the total gain. Moreover, photon correlation measurements show a distinct transition from anti-bunching to Poissonian via bunching with the increase of the excitation power, which is also an evidence of laser oscillation using the single quantum dot gain.

Photonic band-edge micro lasers with quantum dot gain.

We demonstrate optically pumped continuous-wave photonic band-edge microlasers on a two-dimensional photonic crystal slab. Lasing was observed at a photonic band-edge, where the group velocity was significantly small near the K point of the band structure having a triangular lattice. Lasing was achieved by using a quantum dot gain material, which resulted in a significant decrease in the laser threshold, compared with photonic band-edge lasers using quantum well gain material. Extremely low laser thresholds of approximately 80 nW at 6 K was achieved. Lasing was observed in a defect-free photonic crystal as small as approximately 7 microm square.