Metal-insulator crossover in monolayer MoS2.

We report on transport measurements in monolayer MoS2devices, close to the bottom of the conduction band edge. These devices were annealedin situbefore electrical measurements. This allows us to obtain good ohmic contacts at low temperatures, and to measure precisely the conductivity and mobility via four-probe measurements. The measured effective mobility up toµeff= 180 cm2V-1s-1is among the largest obtained in CVD-grown MoS2monolayer devices. These measurements show that electronic transport is of the insulating type forσ≤ 1.4e2/handn≤ 1.7 × 1012cm-2, and a crossover to a metallic regime is observed above those values. In the insulating regime, thermally activated transport dominates at high temperature (T> 120 K). At lower temperatures, conductivity is driven by Efros-Schklovkii variable range hopping in all measured devices, with a universal and constant hopping prefactor, that is a clear indication that hopping is not phonon-mediated. At higher carrier density, and high temperature, the conductivity is well modeled by the Boltzmann equation for a non-interacting Fermi gas, taking into account both phonon and impurity scatterings. Finally, even if this apparent metal-insulator transition can be explained by phonon-related phenomena at high temperature, the possibility of a genuine 2D MIT cannot be ruled out, as we can observe a clear power-law diverging localization length close to the transition, and a one-parameter scaling can be realized.

Flat Bands and Giant Light-Matter Interaction in Hexagonal Boron Nitride.

Dispersionless energy bands in k space are a peculiar property gathering increasing attention for the emergence of novel electronic, magnetic, and photonic properties. Here, we explore the impact of electronic flat bands on the light-matter interaction. The van der Waals interaction between the atomic layers of hexagonal boron nitride induces flat bands along specific lines of the Brillouin zone. The macroscopic degeneracy along these lines leads to van Hove singularities with divergent joint density of states, resulting in outstanding optical properties of the excitonic states. For the direct exciton, we report a giant oscillator strength with a longitudinal-transverse splitting of 420 meV, a record value, confirmed by our ab initio calculations. For the fundamental indirect exciton, flat bands result in phonon-assisted processes of exceptional efficiency, that compete with direct absorption in reflectivity, and that make the internal quantum efficiency close to values typical of direct band gap semiconductors.

Electronic heat flow and thermal shot noise in quantum circuits.

When assembling individual quantum components into a mesoscopic circuit, the interplay between Coulomb interaction and charge granularity breaks down the classical laws of electrical impedance composition. Here we explore experimentally the thermal consequences, and observe an additional quantum mechanism of electronic heat transport. The investigated, broadly tunable test-bed circuit is composed of a micron-scale metallic node connected to one electronic channel and a resistance. Heating up the node with Joule dissipation, we separately determine, from complementary noise measurements, both its temperature and the thermal shot noise induced by the temperature difference across the channel. The thermal shot noise predictions are thereby directly validated, and the electronic heat flow is revealed. The latter exhibits a contribution from the channel involving the electrons' partitioning together with the Coulomb interaction. Expanding heat current predictions to include the thermal shot noise, we find a quantitative agreement with experiments.

Tunable quantum criticality and super-ballistic transport in a "charge" Kondo circuit.

Quantum phase transitions (QPTs) are ubiquitous in strongly correlated materials. However, the microscopic complexity of these systems impedes the quantitative understanding of QPTs. We observed and thoroughly analyzed the rich strongly correlated physics in two profoundly dissimilar regimes of quantum criticality. With a circuit implementing a quantum simulator for the three-channel Kondo model, we reveal the universal scalings toward different low-temperature fixed points and along the multiple crossovers from quantum criticality. An unanticipated violation of the maximum conductance for ballistic free electrons is uncovered. The present charge pseudospin implementation of a Kondo impurity opens access to a broad variety of strongly correlated phenomena.

Magnetic bistability of a TbPc2 submonolayer on a graphene/SiC(0001) conductive electrode.

The alteration of the properties of single-molecule magnets (SMMs) due to the interaction with metallic electrodes is detrimental to their employment in spintronic devices. Conversely, herein we show that the terbium(iii) bis-phthalocyaninato complex, TbPc2, maintains its SMM behavior up to 9 K on a graphene/SiC(0001) substrate, making this alternative conductive layer highly promising for molecular spintronic applications.

Primary thermometry triad at 6 mK in mesoscopic circuits.

Quantum physics emerge and develop as temperature is reduced. Although mesoscopic electrical circuits constitute an outstanding platform to explore quantum behaviour, the challenge in cooling the electrons impedes their potential. The strong coupling of such micrometre-scale devices with the measurement lines, combined with the weak coupling to the substrate, makes them extremely difficult to thermalize below 10 mK and imposes in situ thermometers. Here we demonstrate electronic quantum transport at 6 mK in micrometre-scale mesoscopic circuits. The thermometry methods are established by the comparison of three in situ primary thermometers, each involving a different underlying physics. The employed combination of quantum shot noise, quantum back action of a resistive circuit and conductance oscillations of a single-electron transistor covers a remarkably broad spectrum of mesoscopic phenomena. The experiment, performed in vacuum using a standard cryogen-free dilution refrigerator, paves the way towards the sub-millikelvin range with additional thermalization and refrigeration techniques.

Phonon-Photon Mapping in a Color Center in Hexagonal Boron Nitride.

We report on the ultraviolet optical response of a color center in hexagonal boron nitride. We demonstrate a mapping between the vibronic spectrum of the color center and the phonon dispersion in hexagonal boron nitride, with a striking suppression of the phonon assisted emission signal at the energy of the phonon gap. By means of nonperturbative calculations of the electron-phonon interaction in a strongly anisotropic phonon dispersion, we reach a quantitative interpretation of the acoustic phonon sidebands from cryogenic temperatures up to room temperature. Our analysis provides an original method for estimating the spatial extension of the electronic wave function in a point defect.

Controlling charge quantization with quantum fluctuations.

In 1909, Millikan showed that the charge of electrically isolated systems is quantized in units of the elementary electron charge e. Today, the persistence of charge quantization in small, weakly connected conductors allows for circuits in which single electrons are manipulated, with applications in, for example, metrology, detectors and thermometry. However, as the connection strength is increased, the discreteness of charge is progressively reduced by quantum fluctuations. Here we report the full quantum control and characterization of charge quantization. By using semiconductor-based tunable elemental conduction channels to connect a micrometre-scale metallic island to a circuit, we explore the complete evolution of charge quantization while scanning the entire range of connection strengths, from a very weak (tunnel) to a perfect (ballistic) contact. We observe, when approaching the ballistic limit, that charge quantization is destroyed by quantum fluctuations, and scales as the square root of the residual probability for an electron to be reflected across the quantum channel; this scaling also applies beyond the different regimes of connection strength currently accessible to theory. At increased temperatures, the thermal fluctuations result in an exponential suppression of charge quantization and in a universal square-root scaling, valid for all connection strengths, in agreement with expectations. Besides being pertinent for the improvement of single-electron circuits and their applications, and for the metal-semiconductor hybrids relevant to topological quantum computing, knowledge of the quantum laws of electricity will be essential for the quantum engineering of future nanoelectronic devices.

Engineering the Charge Transfer in all 2D Graphene-Nanoplatelets Heterostructure Photodetectors.

Two dimensional layered (i.e. van der Waals) heterostructures open up great prospects, especially in photodetector applications. In this context, the control of the charge transfer between the constituting layers is of crucial importance. Compared to bulk or 0D system, 2D materials are characterized by a large exciton binding energy (0.1-1 eV) which considerably affects the magnitude of the charge transfer. Here we investigate a model system made from colloidal 2D CdSe nanoplatelets and epitaxial graphene in a phototransistor configuration. We demonstrate that using a heterostructured layered material, we can tune the magnitude and the direction (i.e. electron or hole) of the charge transfer. We further evidence that graphene functionalization by nanocrystals only leads to a limited change in the magnitude of the 1/f noise. These results draw some new directions to design van der Waals heterostructures with enhanced optoelectronic properties.

Electron Phase Shift at the Zero-Bias Anomaly of Quantum Point Contacts.

The Kondo effect is the many-body screening of a local spin by a cloud of electrons at very low temperature. It has been proposed as an explanation of the zero-bias anomaly in quantum point contacts where interactions drive a spontaneous charge localization. However, the Kondo origin of this anomaly remains under debate, and additional experimental evidence is necessary. Here we report on the first phase-sensitive measurement of the zero-bias anomaly in quantum point contacts using a scanning gate microscope to create an electronic interferometer. We observe an abrupt shift of the interference fringes by half a period in the bias range of the zero-bias anomaly, a behavior which cannot be reproduced by single-particle models. We instead relate it to the phase shift experienced by electrons scattering off a Kondo system. Our experiment therefore provides new evidence of this many-body effect in quantum point contacts.

Wigner and Kondo physics in quantum point contacts revealed by scanning gate microscopy.

Quantum point contacts exhibit mysterious conductance anomalies in addition to well-known conductance plateaus at multiples of 2e(2)/h. These 0.7 and zero-bias anomalies have been intensively studied, but their microscopic origin in terms of many-body effects is still highly debated. Here we use the charged tip of a scanning gate microscope to tune in situ the electrostatic potential of the point contact. While sweeping the tip distance, we observe repetitive splittings of the zero-bias anomaly, correlated with simultaneous appearances of the 0.7 anomaly. We interpret this behaviour in terms of alternating equilibrium and non-equilibrium Kondo screenings of different spin states localized in the channel. These alternating Kondo effects point towards the presence of a Wigner crystal containing several charges with different parities. Indeed, simulations show that the electron density in the channel is low enough to reach one-dimensional Wigner crystallization over a size controlled by the tip position.

High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen.

We investigate the magneto-transport properties of epitaxial graphene single-layer on 4H-SiC(0001), grown by atmospheric pressure graphitization in Ar, followed by H2 intercalation. We directly demonstrate the importance of saturating the Si dangling bonds at the graphene/SiC(0001) interface to achieve high carrier mobility. Upon successful Si dangling bonds elimination, carrier mobility increases from 3 000 cm(2)V(-1)s(-1) to >11 000 cm(2)V(-1)s(-1) at 0.3 K. Additionally, graphene electron concentration tends to decrease from a few 10(12) cm(-2) to less than 10(12) cm(-2). For a typical large (30 × 280 µm(2)) Hall bar, we report the observation of the integer quantum Hall states at 0.3 K with well developed transversal resistance plateaus at Landau level filling factors of ν = 2, 6, 10, 14... 42 and Shubnikov de Haas oscillation of the longitudinal resistivity observed from about 1 T. In such a device, the Hall state quantization at ν = 2, at 19 T and 0.3 K, can be very robust: the dissipation in electronic transport can stay very low, with the longitudinal resistivity lower than 5 mΩ, for measurement currents as high as 250 µA. This is very promising in the view of an application in metrology.

Charged nano-domes and bubbles in epitaxial graphene.

For the first time, new epitaxial graphene nano-structures resembling charged 'bubbles' and 'domes' are reported. A strong influence, arising from the change in morphology, on the graphene layer's electronic, mechanical and optical properties has been shown. The morphological properties of these structures have been studied with atomic force microscopy (AFM), ultrasonic force microscopy (UFM) and Raman spectroscopy. After initial optical microscopy observation of the graphene, a detailed description of the surface morphology, via AFM and nanomechanical UFM measurements, was obtained. Here, graphene nano-structures, domes and bubbles, ranging from a few tens of nanometres (150­200 nm) to a few µm in size have been identified. The AFM topographical and UFM stiffness data implied the freestanding nature of the graphene layer within the domes and bubbles, with heights on the order of 5­12 nm. Raman spectroscopy mappings of G and 2D bands and their ratio confirm not only the graphene composition of these structures but also the existence of step bunching, defect variations and the carrier density distribution. In particular, inside the bubbles and substrate there arises complex charge redistribution; in fact, the graphene bubble­substrate interface forms a charged capacitance. We have determined the strength of the electric field inside the bubble­substrate interface, which may lead to a minigap of the order of 5 meV opening for epitaxial graphene grown on 4H-SiC face-terminated carbon.

Flower-shaped domains and wrinkles in trilayer epitaxial graphene on silicon carbide.

Trilayer graphene is of particular interest to the 2D materials community because of its unique tunable electronic structure. However, to date, there is a lack of fundamental understanding of the properties of epitaxial trilayer graphene on silicon carbide. Here, following successful synthesis of large-area uniform trilayer graphene, atomic force microscopy (AFM) showed that the trilayer graphene on 6H-SiC(0001) was uniform over a large scale. Additionally, distinct defects, identified as flower-shaped domains and isolated wrinkle structures, were observed randomly on the surface using scanning tunneling microscopy and spectroscopy (STM/STS). These carbon nanostructures formed during growth, has different structural and electronic properties when compared with the adjacent flat regions of the graphene. Finally, using low temperature STM/STS at 4K, we found that the isolated wrinkles showed an irreversible rotational motion between two 60° configurations at different densities of states.

Epitaxial graphene on cubic SiC(111)Si(111) substrate.

Epitaxial graphene films grown on silicon carbide (SiC) substrate by solid state graphitization is of great interest for electronic and optoelectronic applications. In this paper, we explore the properties of epitaxial graphene films on 3C-SiC(111)Si(111) substrate. X-ray photoelectron spectroscopy and scanning tunneling microscopy were extensively used to characterize the quality of the few-layer graphene (FLG) surface. The Raman spectroscopy studies were useful in confirming the graphitic composition and measuring the thickness of the FLG samples.

Local tuning of CoPt nanoparticle size and density with a focused ion beam nanowriter.

Ultra-small CoPt nanoparticles (NPs) with a mean diameter of 1.3 nm (around 100 atoms) were deposited on a thin 5 nm self-supported amorphous carbon membrane. The effects of focused irradiation with a newly developed Ga(+) ion source were studied by transmission electron microscopy. While the overall coverage of the NPs remained constant, the mean diameter and the density of the NPs evolve in the dose range from 5 x 10(13) to 1 x 10(15) ions cm(-2). The local tuning of the size and density of CoPt NPs by means of ion irradiation could be used in magnetic data storage applications.