An electroluminescent and tunable cavity-enhanced carbon-nanotube-emitter in the telecom band.

Emerging photonic information processing systems require chip-level integration of controllable nanoscale light sources at telecommunication wavelengths. Currently, substantial challenges remain in the dynamic control of the sources, the low-loss integration into a photonic environment, and in the site-selective placement at desired positions on a chip. Here, we overcome these challenges using heterogeneous integration of electroluminescent (EL), semiconducting carbon nanotubes (sCNTs) into hybrid two dimensional - three dimensional (2D-3D) photonic circuits. We demonstrate enhanced spectral line shaping of the EL sCNT emission. By back-gating the sCNT-nanoemitter we achieve full electrical dynamic control of the EL sCNT emission with high on-off ratio and strong enhancement in the telecommunication band. Using nanographene as a low-loss material to electrically contact sCNT emitters directly within a photonic crystal cavity enables highly efficient EL coupling without compromising the optical quality of the cavity. Our versatile approach paves the way for controllable integrated photonic circuits.

Interlaboratory study on Sb2S3 interplay between structure, dielectric function, and amorphous-to-crystalline phase change for photonics.

Antimony sulfide, Sb2S3, is interesting as the phase-change material for applications requiring high transmission from the visible to telecom wavelengths, with its band gap tunable from 2.2 to 1.6 eV, depending on the amorphous and crystalline phase. Here we present results from an interlaboratory study on the interplay between the structural change and resulting optical contrast during the amorphous-to-crystalline transformation triggered both thermally and optically. By statistical analysis of Raman and ellipsometric spectroscopic data, we have identified two regimes of crystallization, namely 250°C ≤ T < 300°C, resulting in Type-I spherulitic crystallization yielding an optical contrast Δn ∼ 0.4, and 300 ≤ T < 350°C, yielding Type-II crystallization bended spherulitic structure with different dielectric function and optical contrast Δn ∼ 0.2 below 1.5 eV. Based on our findings, applications of on-chip reconfigurable nanophotonic phase modulators and of a reconfigurable high-refractive-index core/phase-change shell nanoantenna are designed and proposed.

Efficient Coupling of an Ensemble of Nitrogen Vacancy Center to the Mode of a High-Q, Si3N4 Photonic Crystal Cavity.

Integrated nanophotonics is an emerging field with high potential for quantum technology applications such as quantum sensing or quantum networks. A desired photonics platform is Si3N4 due to low-photon loss and well-established fabrication techniques. However, quantum optics applications are not yet established. Here, we investigate an approach toward Si3N4-based quantum photonics utilizing a crossed waveguide, pump-probe design. The platform enables efficient, on-chip excitation, strong background suppression, and at the same time, efficient coupling to the mode of a high- Q photonic crystal cavity. The freestanding photonic crystal cavities reach high Q-factors up to 47 × 103. To test our platform, we positioned an ensemble of negatively charged nitrogen vacancy centers located in a nanodiamond within the interaction zone of the photonic crystal cavity. We quantify the efficiency of the coupling with the ßλ-factor reaching values as large as 0.71. We further demonstrate on-chip excitation of the quantum emitter with strong suppression (∼20 dB) of the background fluorescence. Our results unfold the potential to utilize negatively charged nitrogen vacancy centers in nanodiamonds and Si3N4 platforms as an efficient, on-chip spin-photon interface in quantum photonics experiments.