Activating Ion Channels in Collapsed Hydrogel Derived Densified MXene Films with Cellulose Nanofibers to Overcome the Areal Versus Volumetric Capacitance Trade-Off.

Concomitant achievement of all three performance pillars of a supercapacitor device, namely gravimetric, areal, and volumetric capacitance is a grand challenge. Nevertheless, its fulfilment is indispensable for commercial usage. Although, high compactness is the fundamental requirement to achieve high volumetric performance, it severely affects ion transportation in thick electrodes. Such trade-off makes it extremely challenging to realize very high areal and volumetric performance simultaneously. Here, a collapsed hydrogel strategy is introduced to develop MXene/cellulose nanofiber (CNF) based densified electrodes that offer excellent ion transportation despite a massive increase in areal mass loading (>70 mg cm-2). Quasi-oriented MXene/CNF (MXCF) hydrogels are produced through an electric field-guided co-assembly technique. Ambient dehydration of these hydrogels incorporates numerous pores in the resultant compact electrodes due to crumpling of the MXene sheets, while CNF ensures connectivity among the locally blocked pores in different length scales. The resultant collapsed MXCF densified electrode shows a remarkably high areal capacitance of 16 F cm-2 while simultaneously displaying a high volumetric capacitance of 849.8 F cm-3 at an ultrahigh mass loading of up to 73.4 mg cm-2. The universality of strategy, including the co-assembly of hydrogel and its collapse, is further demonstrated to develop high-performance asymmetric and wearable devices.

Redox-mediated Negative Differential Resistance (NDR) Behavior in Perylenediimide Derivative: A Supramolecular Approach.

Deaggregated perylenediimide (PDI) derivatives exhibit exceptionally high quantum yields, photostability and appropriate molecular features for organic electronics. This work demonstrates a metal-dye-metal framework with a large and stable negative differential resistance (NDR) at ambient conditions, built using a supramolecular strategy. The deaggregation achieved through the encapsulation of the bay-substituted phenyl groups of aggregated (l/d)-Phe-PDI dyes by the ß-CD macrocyclic host is validated through detailed spectroscopic and imaging techniques. The host-guest interaction resulted in a dramatic enhancement in the emission yield from 0.28 to 0.90. In the thin film deposits, the ß-CD/(l/d)-Phe-PDI complex displayed well-connected sheet-like morphology, whereas the uncomplexed (l/d)-Phe-PDI dye remained as scattered lumps. The large and reversible I-V characteristics displaying strong NDR behavior is attributed to the oxidation/reduction processes involving the rigid π-rich PDI core and is stable at least for about six months at ambient conditions, a promising system for organic electronics applications.

Investigations on Substrate Temperature-Induced Growth Modes of Organic Semiconductors at Dielectric/semiconductor Interface and Their Correlation with Threshold Voltage Stability in Organic Field-Effect Transistors.

Influence of substrate temperature on growth modes of copper phthalocyanine (CuPc) thin films at the dielectric/semiconductor interface in organic field effect transistors (OFETs) is investigated. Atomic force microscopy (AFM) imaging at the interface reveals a change from 'layer+island' to "island" growth mode with increasing substrate temperatures, further confirmed by probing the buried interfaces using X-ray reflectivity (XRR) and positron annihilation spectroscopic (PAS) techniques. PAS depth profiling provides insight into the details of molecular ordering while positron lifetime measurements reveal the difference in packing modes of CuPc molecules at the interface. XRR measurements show systematic increase in interface width and electron density correlating well with the change from layer + island to coalesced huge 3D islands at higher substrate temperatures. Study demonstrates the usefulness of XRR and PAS techniques to study growth modes at buried interfaces and reveals the influence of growth modes of semiconductor at the interface on hole and electron trap concentrations individually, thereby affecting hysteresis and threshold voltage stability. Minimum hole trapping is correlated to near layer by layer formation close to the interface at 100 °C and maximum to the island formation with large voids between the grains at 225 °C.

Probing molecular packing at engineered interfaces in organic field effect transistor and its correlation with charge carrier mobility.

Surface engineering of SiO2 dielectric using different self-assembled monolayer (SAM) has been carried out, and its effect on the molecular packing and growth behavior of copper phthalocyanine (CuPc) has been studied. A correlation between the growth behavior and performance of organic field effect transistors is examined. Depth profiling using positron annihilation and X-ray reflectivity techniques has been employed to characterize the interface between CuPc and the modified and/or unmodified dielectric. We observe the presence of structural defects or disorder due to disorientation of CuPc molecules on the unmodified dielectric and ordered arrangement on the modified dielectrics, consistent with the high charge carrier mobility in organic field effect transistors in the latter. The study also highlights the sensitivity of these techniques to the packing of CuPc molecules on SiO2 modified using different SAMs. Our study also signifies the sensitivity and utility of these two techniques in the characterization of buried interfaces in organic devices.