ABSTRACT
The paper reports on high voltage (HV)-isolated MEMS quad-solenoid transformers for compact isolated gate drivers and bias power supplies. The component is wafer-level fabricated via a novel MEMS micro-casting technique, where the tightly coupled quad-solenoid chip consists of monolithically integrated 3D inductive coils and an inserted ferrite magnetic core for high-efficiency isolated power transmission through electromagnetic coupling. The proposed HV-isolated transformer demonstrates a high inductance value of 743.2 nH, along with a small DC resistance of only 0.39 Ω in a compact footprint of 6 mm2, making it achieve a very high inductance integration density (123.9 nH/mm2) and the ratio of L/R (1906 nH/Ω). More importantly, with embedded ultra-thick serpentine-shaped (S-shaped) SiO2 isolation barriers that completely separate the primary and secondary windings, an over 2 kV breakdown voltage is obtained. In addition, the HV-isolated transformer chips exhibit a superior power transfer efficiency of over 80% and ultra-high dual-phase saturation current of 1.4 A, thereby covering most practical cases in isolated, integrated bias power supplies such as high-efficiency high-voltage-isolated gate driver solutions.
ABSTRACT
This paper proposes a piezoresistive high-temperature absolute pressure sensor based on (100)/(111) hybrid SOI (silicon-on-insulator) silicon wafers, where the active layer is (100) silicon and the handle layer is (111) silicon. The 1.5 MPa ranged sensor chips are designed with the size as tiny as 0.5 × 0.5 mm, and the chips are fabricated only from the front side of the wafer for simple, high-yield and low-cost batch production. Herein, the (100) active layer is specifically used to form high-performance piezoresistors for high-temperature pressure sensing, while the (111) handle layer is used to single-side construct the pressure-sensing diaphragm and the pressure-reference cavity beneath the diaphragm. Benefitting from front-sided shallow dry etching and self-stop lateral wet etching inside the (111)-silicon substrate, the thickness of the pressure-sensing diaphragm is uniform and controllable, and the pressure-reference cavity is embedded into the handle layer of (111) silicon. Without the conventionally used double-sided etching, wafer bonding and cavity-SOI manufacturing, a very small sensor chip size of 0.5 × 0.5 mm is achieved. The measured performance of the 1.5 MPa ranged pressure sensor exhibits a full-scale output of approximately 59.55 mV/1500 kPa/3.3 VDC in room temperature and a high overall accuracy (combined with hysteresis, non-linearity and repeatability) of 0.17%FS within the temperature range of -55 °C to 350 °C. In addition, the thermal hysteresis is also evaluated as approximately 0.15%FS at 350 °C. The tiny-sized high temperature pressure sensors are promising in various industrial automatic control applications and wind tunnel testing systems.
ABSTRACT
A silicon-chip-based 3D metal solenoidal transformer is proposed and developed to achieve AC-DC conversion for integrated power supply applications. With wafer-level micro electromechanical systems (MEMS) fabrication technique to form the metal casting mold and the following micro-casting technique to rapidly (within 6 min) fill molten ZnAl alloy into the pre-micromachined silicon mold, 45-turns primary solenoid and 7-turns secondary solenoid are fabricated in silicon wafers, where the two intertwining solenoids are located at inner deck and outer deck, respectively. Permalloy soft magnetic core is inserted into a pre-etched channel in the silicon chip, which is surrounded by the solenoids. The size of the chip-style transformer is as small as 8.5 mm × 6.6 mm × 2.5 mm. The internal resistance of the primary solenoid is 1.82 Ω and that of the secondary solenoid is 0.16 Ω. The working frequency of the transformer is 60 kHz. Combined with the testing circuit of the switch mode power supply, the DC voltage of 13.02 V is obtained when the input is 110 V at 50 Hz/60 Hz. Furthermore, the on-chip 3D solenoidal transformer is used for lighting four LEDs, which shows great potential for AC-DC power supply. The wafer-level fabricated chip-style solenoidal AC-DC transformer for integrated power supply is advantageous in uniform fabrication, small size and volume applications.
