Surface plasmon resonance extension through two-block metal-conducting polymer nanorods.

Research on surface plasmon resonance coupling of metallic nanostructures is an important area in the field of plasmonics because distinctive collective optical properties can be realized that are different from the individual constituents. Here we report the localized surface plasmon resonance of hybrid metal-organic nanorods. Colloidal-dispersed Au-PPy nanorods were synthesized as a representative material using a modified electrochemical method, and the collective oscillation properties were systematically investigated by comparing these materials with pure Au nanorods. We observed the extended surface plasmon resonance of a hybrid system. The presence of doped-PPy segments on Au segments induced an enhanced coherent electric field due to the partial contribution of π-electrons on the PPy segment, which led to a red-shifted plasmon feature. Additionally, we demonstrated that surface plasmon resonance extension can be tuned by dopant anions, which demonstrates a way of tuning a dopant-induced plasmonic system.

Tip-Enhanced Raman Scattering Imaging of Two-Dimensional Tungsten Disulfide with Optimized Tip Fabrication Process.

We successfully achieve the tip-enhanced nano Raman scattering images of a tungsten disulfide monolayer with optimizing a fabrication method of gold nanotip by controlling the concentration of etchant in an electrochemical etching process. By applying a square-wave voltage supplied from an arbitrary waveform generator to a gold wire, which is immersed in a hydrochloric acid solution diluted with ethanol at various ratios, we find that both the conical angle and radius of curvature of the tip apex can be varied by changing the ratio of hydrochloric acid and ethanol. We also suggest a model to explain the origin of these variations in the tip shape. From the systematic study, we find an optimal condition for achieving the yield of ~60% with the radius of ~34 nm and the cone angle of ~35°. Using representative tips fabricated under the optimal etching condition, we demonstrate the tip-enhanced Raman scattering experiment of tungsten disulfide monolayer grown by a chemical vapor deposition method with a spatial resolution of ~40 nm and a Raman enhancement factor of ~4,760.

Modulating Electronic Properties of Monolayer MoS2 via Electron-Withdrawing Functional Groups of Graphene Oxide.

Modulation of the carrier concentration and electronic type of monolayer (1L) MoS2 is highly important for applications in logic circuits, solar cells, and light-emitting diodes. Here, we demonstrate the tuning of the electronic properties of large-area 1L-MoS2 using graphene oxide (GO). GO sheets are well-known as hole injection layers since they contain electron-withdrawing groups such as carboxyl, hydroxyl, and epoxy. The optical and electronic properties of GO-treated 1L-MoS2 are dramatically changed. The photoluminescence intensity of GO-treated 1L-MoS2 is increases by more than 470% compared to the pristine sample because of the increase in neutral exciton contribution. In addition, the A1g peak in Raman spectra shifts considerably, revealing that GO treatment led to the formation of p-type doped 1L-MoS2. Moreover, the current vs voltage (I-V) curves of GO-coated 1L-MoS2 field effect transistors show that the electron concentration of 1L-MoS2 is significantly lower in comparison with pristine 1L-MoS2. Current rectification is also observed from the I-V curve of the lateral diode structure with 1L-MoS2 and 1L-MoS2/GO, indicating that the electronic structure of MoS2 is significantly modulated by the electron-withdrawing functional group of GO.

Suppressing spontaneous polarization of p-GaN by graphene oxide passivation: augmented light output of GaN UV-LED.

GaN-based ultraviolet (UV) LEDs are widely used in numerous applications, including white light pump sources and high-density optical data storage. However, one notorious issue is low hole injection rate in p-type transport layer due to poorly activated holes and spontaneous polarization, giving rise to insufficient light emission efficiency. Therefore, improving hole injection rate is a key step towards high performance UV-LEDs. Here, we report a new method of suppressing spontaneous polarization in p-type region to augment light output of UV-LEDs. This was achieved by simply passivating graphene oxide (GO) on top of the fully fabricated LED. The dipole layer formed by the passivated GO enhanced hole injection rate by suppressing spontaneous polarization in p-type region. The homogeneity of electroluminescence intensity in active layers was improved due to band filling effect. As a consequence, the light output was enhanced by 60% in linear current region. Our simple approach of suppressing spontaneous polarization of p-GaN using GO passivation disrupts the current state of the art technology and will be useful for high-efficiency UV-LED technology.

Light-extraction enhancement of a GaN-based LED covered with ZnO nanorod arrays.

We investigate the mechanism of light extraction enhancement of a GaN-based light-emitting diode (LED) grown on patterned sapphire substrate (PSS), that has ZnO nanorod arrays (NRAs) fabricated on top of the device using the hydrothermal method. We found that the light output power of the LED with ZnO NRAs increases by approximately 30% compared to the conventional LED without damaging the electrical properties of the device. We argue that the gradual decrease of the effective refractive index, which is caused by the fabrication of ZnO NRAs, is the mechanism of the observed improvement. Our argument is confirmed by cross-sectional confocal scanning electroluminescence microscopy (CSEM) and the theoretical simulations, where we observed a distinct increase of the transmission at the interface between LED and air at the operation wavelength of the LED. In addition, the plane-view CSEM results indicate that ZnO NRAs, which were grown on the bare p-type GaN layer as an electrical safety margin area, also contribute to the enhanced light output power of the LED, which indicate further enhancement is manifested even in the optically ineffective sacrificial area.

Operation of a wet near-field scanning optical microscope in stable zones by minimizing the resonance change of tuning forks.

A resonant shift and a decrease of resonance quality of a tuning fork attached to a conventional fiber optic probe in the vicinity of liquid is monitored systematically while varying the protrusion length and immersion depth of the probe. Stable zones where the resonance modification as a function of immersion depth is minimized are observed. A wet near-field scanning optical microscope (wet-NSOM) is operated for a sample within water by using such a stable zone.

Epsilon-near-zero meta-lens for high resolution wide-field imaging.

Herein, we will propose a new application possibility of epsilon-near-zero (ENZ) materials: high resolution wide-field imaging. We show that the resolution can be dramatically enhanced by simply inserting a thin epsilon-near-zero (ENZ) material between the sample and substrate. By performing metal half-plane imaging, we experimentally demonstrate that the resolution could be enhanced by about 47% with a 300-nm-thick SiO2 interlayer, an ENZ material at 8-µm-wavelength (1250 cm-1). The physical origin of the resolution enhancement is the strong conversion of diffracted near fields to quasi-zeroth order far fields enabled by the directive emission of ENZ materials.

Strong field acceleration and steering of ultrafast electron pulses from a sharp metallic nanotip.

We report a strong, laser-field induced modification of the propagation direction of ultrashort electron pulses emitted from nanometer-sized gold tapers. Angle-resolved kinetic energy spectra of electrons emitted from such tips are recorded using ultrafast near-infrared light pulses of variable wavelength and intensity for excitation. For sufficiently long wavelengths, we observe a pronounced strong-field acceleration of electrons within the field gradient at the taper apex. We find a distinct narrowing of the emission cone angle of the fastest electrons. We ascribe this to the field-induced steering of subcycle electrons as opposed to the diverging emission of quiver electrons. Our findings are corroborated by simulations based on a modified Simpleman model incorporating the curved, vectorial field gradient in the vicinity of the tip. Our results indicate new pathways for designing highly directional nanometer-sized ultrafast electron sources.