Highly Efficient, Dual-Functional Self-Assembled Electrospun Nanofiber Filters for Simultaneous PM Removal and On-Site Eye-Readable Formaldehyde Sensing.

Air pollution containing particulate matter (PM) and volatile organic compounds has caused magnificent burdens on individual health and global economy. Although advances in highly efficient or multifunctional nanofiber filters have been achieved, many existing filters can only deal with one type of air pollutant, such as capturing PM or absorbing and detecting toxic gas. Here, highly efficient, dual-functional, self-assembled electrospun nanofiber (SAEN) filters were developed for simultaneous PM removal and onsite eye-readable formaldehyde sensing fabricated on a commercial fabric mask. With the use of an electrolyte solution containing a formaldehyde-sensitive colorimetric agent as a collector during electrospinning, the one-step fabrication of the dual-functional SAEN filter on commercial masks, such as a fabric mask and a daily disposable mask, was achieved. The electrolyte solution also allowed the uniform deposition of electrospun nanofibers, thereby achieving the high efficiency of PM filtration with an increased quality factor up to twice that of commercial masks. The SAEN filter enabled onsite and eye-readable formaldehyde gas detection by changing its color from yellow to red under a 5 ppm concentrated formaldehyde gas atmosphere. The repetitive fabrication and detachment of the SAEN filter on a fabric mask minimized the waste of the mask while maintaining high filtration efficiency by replenishing the SAEN filters and reusing the fabric mask. Given the dual functionality of SAEN filters, this process could provide new insights into designing and developing high performance and dual-functional electrospun nanofiber filters for various applications, including individual protection and indoor purification applications. Supplementary Information: The online version contains supplementary material available at 10.1007/s42765-023-00279-3.

Low threading dislocation density and antiphase boundary free GaAs epitaxially grown on on-axis Si (001) substrates.

Epitaxial growth of III-V materials on a CMOS-compatible Si (001) substrate enables the feasibility of mass production of low-cost and high-yield Si-based III-V optoelectronic devices. However, the material dissimilarities between III-V and group-IV materials induce several types of defects, especially threading dislocations (TDs) and antiphase boundaries (APBs). The presence of these defects is detrimental to the optoelectronic device performance and thus needs to be eliminated. In this paper, the mechanism of APB annihilation during the growth of GaAs on on-axis Si (001) is clarified, along with a detailed investigation of the interaction between TDs and the periodic {110} APBs. A significant reduction in the TD density ascribed to the presence of periodic APBs is discussed. This new observation opens the possibility of reducing both APBs and TDs simultaneously by utilising optimised GaAs growth methods in the future. Hence, a thin APB-free GaAs/Si (001) platform with a low TD density (TDD) was obtained. Based on this platform, a high-performance high-yield III-V optoelectronic device grown on CMOS-compatible Si (001) substrates with an overall thickness below the cracking threshold is feasible, enabling the mass production of Si-based photonic integrated circuits (PICs).

Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001).

Semiconductor III-V photonic crystal (PC) laser is regarded as a promising ultra-compact light source with unique advantages of ultralow energy consumption and small footprint for the next generation of Si-based on-chip optical interconnects. However, the significant material dissimilarities between III-V materials and Si are the fundamental roadblock for conventional monolithic III-V-on-silicon integration technology. Here, we demonstrate ultrasmall III-V PC membrane lasers monolithically grown on CMOS-compatible on-axis Si (001) substrates by using III-V quantum dots. The optically pumped InAs/GaAs quantum-dot PC lasers exhibit single-mode operation with an ultra-low threshold of ~0.6 µW and a large spontaneous emission coupling efficiency up to 18% under continuous-wave condition at room temperature. This work establishes a new route to form the basis of future monolithic light sources for high-density optical interconnects in future large-scale silicon electronic and photonic integrated circuits.

High-throughput retrieval of physical DNA for NGS-identifiable clones in phage display library.

In antibody discovery, in-depth analysis of an antibody library and high-throughput retrieval of clones in the library are crucial to identifying and exploiting rare clones with different properties. However, existing methods have technical limitations, such as low process throughput from the laborious cloning process and waste of the phenotypic screening capacity from unnecessary repetitive tests on the dominant clones. To overcome the limitations, we developed a new high-throughput platform for the identification and retrieval of clones in the library, TrueRepertoire™. This new platform provides highly accurate sequences of the clones with linkage information between heavy and light chains of the antibody fragment. Additionally, the physical DNA of clones can be retrieved in high throughput based on the sequence information. We validated the high accuracy of the sequences and demonstrated that there is no platform-specific bias. Moreover, the applicability of TrueRepertoire™ was demonstrated by a phage-displayed single-chain variable fragment library targeting human hepatocyte growth factor protein.

A Pathophysiological Validation of Collagenase II-Induced Biochemical Osteoarthritis Animal Model in Rabbit.

BACKGROUND: Current dilemma working with surgically-induced OA (osteoarthritis) model include inconsistent pathological state due to various influence from surrounding tissues. On the contrary, biochemical induction of OA using collagenase II has several advantageous points in a sense that it does not involve surgery to induce model and the extent of induced cartilage degeneration is almost uniform. However, concerns still exists because biochemical OA model induce abrupt destruction of cartilage tissues through enzymatic digestion in a short period of time, and this might accompany systemic inflammatory response, which is rather a trait of RA (rheumatoid arthritis) than being a trait of OA. METHODS: To clear the concern about the systemic inflammatory response that might be caused by abrupt destruction of cartilage tissue, OA was induced to only one leg of an animal and the other leg was examined to confirm the presence of systemic degenerative effect. RESULTS: Although the cartilage tissues were rapidly degenerated during short period of time upon biochemical induction of OA, they did not accompanied with RA-like process based on the histology data showing degeneration of articular cartilage occurred only in the collagenase-injected knee joint. Scoring evaluation data indicated that the cartilage tissues in non-induced joint remained intact. Neutrophil count transiently increase between day 8 and day 16, and there were no significant change in other complete blood count profile showing a characteristics of OA disease. CONCLUSION: These study shows that biochemically induced cartilage degeneration truly represented uniform and reliable OA state.

Genome Sequence of Grapevine Virus K, a Novel Vitivirus Infecting Grapevine.

Here, we report the genome sequence of grapevine virus K (GVK), a novel single-stranded RNA virus identified from a transcriptome of grapevine. The genome of GVK is 7,476 nucleotides in length and encodes 5 open reading frames. GVK is a putative member of the genus Vitivirus in the family Betaflexiviridae.

Genome Sequence of Grapevine Virus T, a Novel Foveavirus Infecting Grapevine.

Here, we report the genome sequence of grapevine virus T (GVT), a novel single-stranded RNA virus identified from a transcriptome of grapevine. The genome of GVT is 8,701 nucleotides in length and encodes five open reading frames. GVT is a putative member of the genus Foveavirus in the family Betaflexiviridae.

Verification of the Seismic Performance of a Rigidly Connected Modular System Depending on the Shape and Size of the Ceiling Bracket.

Modular systems have been mostly researched in relatively low-rise structures but, lately, their applications to mid- to high-rise structures began to be reviewed, and research interest in new modularization subjects has increased. The application of modular systems to mid- to high-rise structures requires the structural stability of the frame and connections that consist of units, and the evaluation of the stiffness of structures that are combined in units. However, the combination of general units causes loss of the cross-section of columns or beams, resulting in low seismic performance and hindering installation works in the field. In addition, the evaluation of a frame considering such a cross-sectional loss is not easy. Therefore, it is necessary to develop a joint that is stable and easy to install. In the study, a rigidly connected modular system was proposed as a moment-resisting frame for a unit modular system, and their joints were developed and their performances were compared. The proposed system changed the ceiling beam into a bracket type to fasten bolts. It can be merged with other seismic force-resisting systems. To verify the seismic performance of the proposed system, a cyclic loading test was conducted, and the rigidly connected joint performance and integrated behavior at the joint of modular units were investigated. From the experimental results, the maximum resisting force of the proposed connection exceeded the theoretical parameters, indicating that a rigid joint structural performance could be secured.

Use of a patterned current blocking layer to enhance the light output power of InGaN-based light-emitting diodes.

We employed a patterned current blocking layer (CBL) to enhance light output power of GaN-based light-emitting diodes (LEDs). Nanoimprint lithography (NIL) was used to form patterned CBLs (a diameter of 260 nm, a period of 600, and a height of 180 nm). LEDs (chip size: 300 × 800 µm2) fabricated with no CBL, a conventional SiO2 CBL, and a patterned SiO2 CBL, respectively, exhibited forward-bias voltages of 3.02, 3.1 and 3.1 V at an injection current of 20 mA. The LEDs without and with CBLs gave series resistances of 9.8 and 11.0 Ω, respectively. The LEDs with a patterned SiO2 CBL yielded 39.6 and 11.9% higher light output powers at 20 mA, respectively, than the LEDs with no CBL and conventional SiO2 CBL. On the basis of emission images and angular transmittance results, the patterned CBL-induced output enhancement is attributed to the enhanced light extraction and current spreading.

Multifunctional Collagen and Hyaluronic Acid Multilayer Films on Live Mesenchymal Stem Cells.

Cell encapsulation has been reported to convey cytoprotective effects and to better maintain cell survival. In contrast to other studies, our report shows that the deposition of two major biomacromolecules, collagen type I (Col) and hyaluronic acid (HA), on mesenchymal stem cells (MSCs) does not entirely block the cell plasma membrane surface. Instead, a considerable amount of the surface remained uncovered or only slightly covered, as confirmed by TEM observation and by FACS analysis based on quantitative surface labeling. Despite this structure showing openness and flexibility, the multilayer Col/HA films significantly increased cell survival in the attachment-deprived culture condition. In terms of stem cell characteristics, the MSCs still showed functional cell activity after film deposition, as evidenced by their colony-forming activity and in vitro osteogenic differentiation. The Col/HA multilayer films could provide a cytoprotective effect and induce osteogenic differentiation without deteriorating effect or inhibition of cellular attachment, showing that this technique can be a valuable tool for modulating stem cell activities.

Formation of an indium tin oxide nanodot/Ag nanowire electrode as a current spreader for near ultraviolet AlGaN-based light-emitting diodes.

Indium tin oxide (ITO) nanodots (NDs) were combined with Ag nanowires (Ag NWs) as a p-type electrode in near ultraviolet AlGaN-based light-emitting diodes (LEDs) to increase light output power. The Ag NWs were 30 ± 5 nm in diameter and 25 ± 5 µm in length. The transmittance of 10 nm-thick ITO-only was 98% at 385 nm, while the values for ITO ND/Ag NW were 83%-88%. ITO ND/Ag NW films showed lower sheet resistances (32-51 Ω sq-1) than the ITO-only film (950 Ω sq-1). LEDs (chip size: 300 × 800 µm2) fabricated using the ITO NDs/Ag NW electrodes exhibited higher forward-bias voltages (3.52-3.75 V at 20 mA) than the LEDs with the 10 nm-thick ITO-only electrode (3.5 V). The LEDs with ITO ND/Ag NW electrodes yielded a 24%-62% higher light output power (at 20 mA) than those with the 10 nm-thick ITO-only electrode. Furthermore, finite-difference time-domain (FDTD) simulations were performed to investigate the extraction efficiency. Based on the emission images and FDTD simulations, the enhanced light output with the ITO ND/Ag NW electrodes is attributed to improved current spreading and better extraction efficiency.

Highly reliable Ti-based ohmic contact to N-polar n-type GaN for vertical-geometry light-emitting diodes by using a Ta barrier layer.

The formation of thermally stable and low resistance Ti/Al-based ohmic contacts to N-polar n-GaN for high-power vertical light-emitting diodes (VLEDs) using a Ta diffusion barrier is presented. Before annealing, both Ti/Al/Au and Ti/Ta/Al/Au contacts reveal ohmic behavior with specific contact resistances of 2.4 × 10⁻4 and 1.2 × 10⁻4 Ωcm², respectively. However, unlike the Ti/Al/Au samples that are electrically degraded with increasing annealing time at 250 °C, the Ti/Ta/Al/Au samples remain thermally stable even after annealing for 600 min. LEDs fabricated with the Ti/Ta/Al/Au contacts yield 8.3% higher output power (at 300 mA) than LEDs with the Ti/Al/Au contact. X-ray photoemission spectroscopy results show that the Ta layer serves as an efficient barrier to the indiffusion of oxygen toward the GaN. On the basis of the XPS and electrical results, the annealing dependence of the electrical characteristics of Ti/Al-based contacts are described and discussed.

Near ultraviolet InGaN/AlGaN-based light-emitting diodes with highly reflective tin-doped indium oxide/Al-based reflectors.

The enhanced light output power of a InGaN/AlGaN-based light-emitting diodes (LEDs) using three different types of highly reflective Sn-doped indium oxide (ITO)/Al-based p-type reflectors, namely, ITO/Al, Cu-doped indium oxide (CIO)/s-ITO(sputtered)/Al, and Ag nano-dots(n-Ag)/CIO/s-ITO/Al, is presented. The ITO/Al-based reflectors exhibit lower reflectance (76 - 84% at 365 nm) than Al only reflector (91.1%). However, unlike Al only n-type contact, the ITO/Al-based contacts to p-GaN show good ohmic characteristics. Near-UV (365 nm) InGaN/AlGaN-based LEDs with ITO/Al, CIO/s-ITO/Al, and n-Ag/CIO/s-ITO/Al reflectors exhibit forward-bias voltages of 3.55, 3.48, and 3.34 V at 20 mA, respectively. The LEDs with the ITO/Al and CIO/s-ITO/Al reflectors exhibit 9.5% and 13.5% higher light output power (at 20 mA), respectively, than the LEDs with the n-Ag/CIO/s-ITO/Al reflector. The improved performance of near UV LEDs is attributed to the high reflectance and low contact resistivity of the ITO/Al-based reflectors, which are better than those of conventional Al-based reflectors.