ABSTRACT
Austenitic stainless steel is a vital material in various industries, with excellent heat and corrosion resistance, and is widely used in high-temperature environments as a component for internal combustion engines of transportation vehicles or power plant piping. These components or structures are required to be durable against severe load conditions and oxidation damage in high-temperature environments during their service life. In this regard, in particular, oxidation damage and fatigue life are very important influencing factors, while existing studies have focused on materials and fracture behavior. In order to ensure the fatigue life of austenitic stainless steel, therefore, it is necessary to understand the characteristics of the fracture process with microstructural change including oxidation damage according to the temperature condition. In this work, low-cycle fatigue tests were performed at various temperatures to determine the oxidation damage together with the fatigue life of austenitic stainless steel containing niobium. The characteristics of oxidation damage were analyzed through microstructure observations including scanning electron microscope, energy-dispersive X-ray spectroscopy, and the X-ray diffraction patterns. In addition, a unified low-cycle fatigue life model coupled with the fracture mechanism-based lifetime and the Neu-Sehitoglu model for considering the influence of damage by oxidation was proposed. After the low-cycle fatigue tests at temperatures of 200-800 °C and strain amplitudes of 0.4% and 0.5%, the accuracy of the proposed model was verified by comparing the test results with the predicted fatigue life, and the validity by using the oxidation damage parameters for Mar-M247 was confirmed through sensitivity analysis of the parameters applied in the oxidation damage model. As a result, the average thickness of the oxide layer and the penetration length of the oxide intrusion were predicted with a mean error range of 14.7% and 13%, respectively, and the low-cycle fatigue life was predicted with a ±2 factor accuracy at the measurement temperatures under all experimental conditions.
ABSTRACT
Very smooth ultrananocrystalline diamond (UNCD) film growth on SiC substrate was achieved by a novel pretreatment technique consisted of SiC surface texturing and deaggregation of nanodiamond (ND) seed particles. Texturing of SiC surfaces in Ar and SF6/02 plasmas was found to be able to provide normalized roughness values of 0.5-7.0 compared to the untreated surface. SiC surface plasma-textured and seeded with H2 heat-treated ND particles at 600 degrees C showed the highest nucleation density of ~44.2 x 10(11) cm(-2) and a highly uniform coverage of surface with very fine ND seeds. The UNCD film grown with this new pretreatment technique showed a very smooth surface morphology consisted of small and uniformly distributed grains.
ABSTRACT
The valence band discontinuity (ΔE(v)) of Y2O3/InGaZnO4 (IGZO) heterojunctions was measured by a core-level photoemission method. The Y2O3 exhibited a band gap of -6.27 eV from absorption measurements. A value of ΔE(v) = 0.44 ± 0.21 eV was obtained by using the Ga 2p3/2, Zn 2p3/2 and in 3d5/2 energy levels as references. Given the experimental bandgap of 3.2 eV for the IGZO, this would indicate a conduction band offset ΔE(c) of - 2.63 eV in the Y2O3/IGZO heterostructures and a nested interface band alignment.
ABSTRACT
High density plasma etching of ultrananocrystalline diamond (UNCD) films wasperformed in O2 and O2/Ar inductively coupled plasma (ICP) discharges. The O2/Ar ICP discharges produced higher etch rates due to enhanced physical component of the etching, and a maximum etch rate of -280 nm/min was obtained in 10 sccm O2/5 sccm Ar discharges. Very high etch selectivities up to -140:1 were obtained for the UNCD over Al mask layer. Anisotropic pattern transfer with a vertical sidewall profile was achieved in the 10 sccm O2/5 sccm Ar discharges at a relatively low source power (300 W) and a moderate rf chuck power (200 W).
ABSTRACT
Novel (Ba1_xEu(x))9Y2Si6O24 green phosphors were successfully prepared by a solid-state reaction method. The prepared (Ba1_xEu(x))9Y2Si6O24 green phosphors showed a single intense broadband emission in a range from 502 to 510 nm. The effects of the Eu2+ doping concentration on the optical properties were discussed under consideration of concentration quenching. The experimental results clearly indicates that the prepared (Ba1_xEu(x))9Y2Si6O24 green phosphors have great potentials as a down-conversion green phosphor for white light emitting diodes (LEDs) utilizing blue LEDs as the primary light source.
