Optimization of vertically aligned carbon nanotube beam trajectory with the help of focusing electrode in the microchannel plate.

The focusing electrode plays an important role to reduce the electron beam trajectory with low dispersion and high brightness. This article summarizes the importance of the vertically aligned multi-walled carbon nanotube effect with the focusing electrode. First of all, the effect of electron beam trajectory is studied with the different heights, hole sizes, and applied voltage of the focusing electrode by the opera 3D simulation. The field emission electron beam spot is captured in the microchannel plate which helps to reduce the signal noise effect and damage of CNT tips by the joule heating effect. The high-dense bright spot is optimized at the focusing electrode hole size of 2 mm, and the height of 1 mm from the gate mesh electrode at the low bias voltage of - 200 V without the loss of current. The FWHM of the electron beam is calculated 0.9 mm with its opening angle of 0.9° which could be applicable in high-resolution multi-electron beam microscopy and nano-focused X-ray system technology.

Extreme Ultraviolet Lighting Using Carbon Nanotube-Based Cold Cathode Electron Beam.

Laser-based plasma studies that apply photons to extreme ultraviolet (EUV) generation are actively being conducted, and studies by direct electron irradiation on Sn for EUV lighting have rarely been attempted. Here, we demonstrate a novel method of EUV generation by irradiating Sn with electrons emitted from a carbon nanotube (CNT)-based cold cathode electron beam (C-beam). Unlike a single laser source, electrons emitted from about 12,700 CNT emitters irradiated the Sn surface to generate EUV and control its intensity. EUV light generated by direct irradiation of electrons was verified using a photodiode equipped with a 150 nm thick Zr filter and patterning of polymethyl methacrylate (PMMA) photoresist. EUV generated with an input power of 6 W is sufficient to react the PMMA with exposure of 30 s. EUV intensity changes according to the anode voltage, current, and electron incident angle. The area reaching the Sn and penetration depth of electrons are easily adjusted. This method could be the cornerstone for advanced lithography for semiconductor fabrication and high-resolution photonics.

Beam Trajectory Analysis of Vertically Aligned Carbon Nanotube Emitters with a Microchannel Plate.

Vertically aligned carbon nanotubes (CNTs) are essential to studying high current density, low dispersion, and high brightness. Vertically aligned 14 × 14 CNT emitters are fabricated as an island by sputter coating, photolithography, and the plasma-enhanced chemical vapor deposition process. Scanning electron microscopy is used to analyze the morphology structures with an average height of 40 µm. The field emission microscopy image is captured on the microchannel plate (MCP). The role of the microchannel plate is to determine how the high-density electron beam spot is measured under the variation of voltage and exposure time. The MCP enhances the field emission current near the threshold voltage and protects the CNT from irreversible damage during the vacuum arc. The high-density electron beam spot is measured with an FWHM of 2.71 mm under the variation of the applied voltage and the exposure time, respectively, which corresponds to the real beam spot. This configuration produces the beam trajectory with low dispersion under the proper field emission, which could be applicable to high-resolution multi-beam electron microscopy and high-resolution X-ray imaging technology.

Patterning of Silicon Substrate with Self-Assembled Monolayers Using Vertically Aligned Carbon Nanotube Electron Sources.

We introduce a novel patterning technique based on e-beam lithography using vertically aligned carbon nanotube (VACNT) emitters with self-assembled monolayers (SAMs). A 20 µm line width of silicon wafer patterning was successfully demonstrated using octadecyl trichlorosilane (OTS) as a photoresist. To investigate surface modification by the irradiated electrons from the emitters, both contact angle measurement and energy dispersive X-ray (EDX) analysis were conducted. The patterning mechanism of the electron beam irradiated on OTS-coated substrate by our cold cathode electron beam (C-beam) was demonstrated by the analyzed results. The effect of current density and exposure time on the OTS patterning was studied and optimized for the Si wafer patterning in terms of the electronic properties of the VACNTs. The authors expect the new technique to contribute to the diverse applications to microelectromechanical (MEMS) technologies owing to the advantages of facile operation and precise dose control capability based on field electron emission current from the VACNT emitter arrays.

Investigation of the Effect of Structural Properties of a Vertically Standing CNT Cold Cathode on Electron Beam Brightness and Resolution of Secondary Electron Images.

Carbon nanotube (CNT)-based cold cathodes are promising sources of field emission electrons for advanced electron devices, particularly for ultra-high-resolution imaging systems, due to their high brightness and low energy spread. While the electron field emission properties of single-tip CNT cathodes have been intensively studied in the last few decades, a systematic study of the influencing factors on the electron beam properties of CNT cold cathodes and the resolution of the secondary electron images has been overlooked in this field. Here, we have systematically investigated the effect of the structural properties of a CNT cold cathode on the electron beam properties and resolution of secondary electron microscope (SEM) images. The aspect ratio (geometric factor) and the diameter of the tip of a vertically standing CNT cold cathode significantly affect the electron beam properties, including the beam size and brightness, and consequently determine the resolution of the secondary electron images obtained by SEM systems equipped with a CNT cold cathode module. Theoretical simulation elucidated the dependence of the structural features of CNT cold cathodes and electron beam properties on the contribution of edge-emitted electrons to the total field emission current. Investigating the correlations between the structural properties of CNT cold cathodes, the properties of the emitted electron beams, and the resolution of the secondary electron images captured by SEM equipped with CNT cold cathode modules is highly important and informative as a basic model.

Sapphire Wafer for 226 nm Far UVC Generation with Carbon Nanotube-Based Cold Cathode Electron Beam (C-Beam) Irradiation.

Far ultraviolet C (UVC) light sources have the potential for numerous applications ranging from sterilization, purification, sensing, deodorization, surface modification, and so on. In particular, a short wavelength of far UVC is effective at sterilizing viruses and bacteria by minimizing damage to mammalian skin. Recently, many researchers are devoting materials and alternative light sources to overcome low efficiency, small light-emitting area, UV absorption, and complicated manufacturing processes of far UVC generation. Here, the sapphire wafer is evaluated for far UVC light generation using electron beam irradiation with carbon nanotube (CNT) emitters. A CNT-based cold cathode electron beam (C-beam) that emits electrons and accelerated onto κ-Al2O3 of the sapphire wafer was used as an excitation source to demonstrate high-power far UVC light generation. High-efficiency 226 nm far UVC is made with a power conversion efficiency of 0.87% and a light-emitting area of 960 mm2. Far UVC generation depends on the input power and the crystallinity of sapphire wafers.

Fabrication of Stable Carbon Nanotube Cold Cathode Electron Emitters with Post-Growth Electrical Aging.

We fabricated carbon nanotube (CNT) cold cathode emitters with enhanced and stable electron emission properties and long-time stability with electrical aging as a post-treatment. Our CNT field emitters showed improved electrical properties by electrical aging. We set the applied bias for effective electrical aging, with the bias voltage defined at the voltage where Joule heating appeared. At the initial stage of aging, the electron emission current started to increase and then was saturated within 3 h. We understood that 5 h aging time was enough at proper aging bias. If the aging bias is higher, excessive heating damages CNT emitters. With the electrical aging, we obtained improved electron emission current from 3 mA to 6 mA. The current of 6 mA was steadily driven for 9 h.

Enhancement of Emission Lifetime of CNT Emitters by Coating ZnO on the CNT Surface.

Carbon nanotubes (CNTs) have been investigated as field-emission sources owing to their high electrical conductivity and high aspect ratio. However, practical applications demand that the emission lifetime of CNTs be further improved. Since ZnO demonstrates impressive electrical and thermal conductivity, when coated on the surface of CNTs, it can allow the CNT field emitters to endure high electrical stress and high temperature. Moreover, ZnO nanostructures protect the CNT emitters from being bombarded by high-energy ions, which are accelerated by the high electric field. From the result of emission lifetime measurements at the emission current density of 100 mA/cm2, we found that the emission lifetime was increased by more than a factor of 2 when ZnO had been coated onto the CNT emitters. The observation registers as an important contribution to the practical application of CNT emitters with long-term emission stability, as well as with high emission currents. In this work, we elucidate the detailed mechanism of long-term stability that can be achieved by coating ZnO nanostructures on the surface of CNTs.

All-Carbon Electrode Consisting of Carbon Nanotubes on Graphite Foil for Flexible Electrochemical Applications.

We demonstrate the fabrication of an all-carbon electrode by plasma-enhanced chemical vapor deposition for use in flexible electrochemical applications. The electrode is composed of vertically aligned carbon nanotubes that are grown directly on a flexible graphite foil. Being all-carbon, the simple fabrication process and the excellent electrochemical characteristics present an approach through which high-performance, highly-stable and cost-effective electrochemical applications can be achieved.

Vertically aligned carbon nanotube emitter on metal foil for medical X-ray imaging.

A simple method is proposed for growing vertically aligned carbon nanotubes on metal foil using the triode direct current plasma-enhanced chemical vapor deposition (PECVD). The carbon nanotube (CNT) electron emitter was fabricated using fewer process steps with an acid treated metal substrate. The CNT emitter was used for X-ray generation, and the X-ray image of mouse's joint was obtained with an anode current of 0.5 mA at an anode bias of 60 kV. The simple fabrication of a well-aligned CNT with a protection layer on metal foil, and its X-ray application, were studied.