Formation techniques for upper active channel in monolithic 3D integration: an overview.

The concept of three-dimensional stacking of device layers has attracted significant attention with the increasing difficulty in scaling down devices. Monolithic 3D (M3D) integration provides a notable benefit in achieving a higher connection density between upper and lower device layers than through-via-silicon. Nevertheless, the practical implementation of M3D integration into commercial production faces several technological challenges. Developing an upper active channel layer for device fabrication is the primary challenge in M3D integration. The difficulty arises from the thermal budget limitation for the upper channel process because a high thermal budget process may degrade the device layers below. This paper provides an overview of the potential technologies for forming active channel layers in the upper device layers of M3D integration, particularly for complementary metal-oxide-semiconductor devices and digital circuits. Techniques are for polysilicon, single crystal silicon, and alternative channels, which can solve the temperature issue for the top layer process.

Boron-Based Multi-Resonance TADF Emitter with Suppressed Intermolecular Interaction and Isomer Formation for Efficient Pure Blue OLEDs.

Multi-resonance (MR) thermally activated delayed fluorescent (TADF) emitters are highly attractive due to their superior color purity as well as efficient light-harvesting ability from singlets and triplets. However, boron and nitrogen-based MR-TADF emitters suffer from their strong π-π interaction owing to their rigid flat cores. Herein, a boron-based multi-resonance blue TADF emitter with suppressed intermolecular interaction and isomer formation is developed through a simple synthetic process by introducing meta-xylene and meta-phenyphenyl groups to the core. The MR-TADF emitter, mBP-DABNA-Me, shows a narrowband blue emission with a peak at 467 nm, along with full width at half maximum of 28 nm, and photoluminescence quantum yield of 97%. Notably, highly efficient pure blue organic light-emitting diode (OLED) is realized using mBP-DABNA-Me, showing a maximum external quantum efficiency of 24.3% and a stable blue emission with a Commission Internationale de L'Eclairage coordinate of (0.124, 0.140). The color purity of the OLED is maintained at a high doping concentration of over 20%, attributed to the suppressed intermolecular interaction between the MR emitters.