Novel Synthesis, Coating, and Networking of Curved Copper Nanowires for Flexible Transparent Conductive Electrodes.

In this work, a whole manufacturing process of the curved copper nanowires (CCNs) based flexible transparent conductive electrode (FTCE) is reported with all solution processes, including synthesis, coating, and networking. The CCNs with high purity and good quality are designed and synthesized by a binary polyol coreduction method. In this reaction, volume ratio and reaction time are the significant factors for the successful synthesis. These nanowires have an average 50 nm in width and 25-40 µm range in length with curved structure and high softness. Furthermore, a meniscus-dragging deposition (MDD) method is used to uniformly coat the well-dispersed CCNs on the glass or polyethylene terephthalate substrate with a simple process. The optoelectrical property of the CCNs thin films is precisely controlled by applying the MDD method. The FTCE is fabricated by networking of CCNs using solvent-dipped annealing method with vacuum-free, transfer-free, and low-temperature conditions. To remove the natural oxide layer, the CCNs thin films are reduced by glycerol or NaBH4 solution at low temperature. As a highly robust FTCE, the CCNs thin film exhibits excellent optoelectrical performance (T = 86.62%, R(s) = 99.14 Ω â—»(-1)), flexibility, and durability (R/R(0) < 1.05 at 2000 bending, 5 mm of bending radius).

Synthesis of Cu3Sn alloy nanocrystals through sequential reduction induced by gradual increase of the reaction temperature.

Cu3Sn alloy nanocrystals are synthesized by sequential reduction of Cu and Sn precursors through a gradual increase of the reaction temperature. By transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS), UV/Vis spectroscopy, and X-ray diffraction (XRD) analyses, the alloy formation mechanism of Cu3Sn nanocrystals has been studied. The incremental increase of the reaction temperature sequentially induces the reduction of Sn, the diffusion of Sn into the preformed Cu nanocrystals, resulting in the intermediate phase of Cu-Sn alloy nanocrystals, and then the formation of Cu3Sn alloy nanocrystals. We anticipate that the synthesis of Cu3Sn alloy nanocrystals encourages studies toward the synthesis of various alloy nanomaterials.

UV-visible spectroscopic analysis of electrical properties in alkali metal-doped amorphous zinc tin oxide thin-film transistors.

Solution-processed and alkali metals, such as Li and Na, are introduced in doped amorphous zinc tin oxide (ZTO) semiconductor TFTs, which show better electrical performance, such as improved field effect mobility, than intrinsic amorphous ZTO semiconductor TFTs. Furthermore, by using spectroscopic UV-visible analysis we propose a comprehensive technique for monitoring the improved electrical performance induced by alkali metal doping in terms of the change in optical properties. The change in the optical bandgap supported by the Burstein-Moss theory could successfully show a mobility increase that is related to interstitial doping of alkali metal in ZTO semiconductors.

Micro-patterned ZnO semiconductors for high performance thin film transistors via chemical imprinting with a PDMS stamp.

Chemical imprinting was conducted on ZnO semiconductor films via a chemical reaction at the contact regions between a micro-patterned PDMS stamp and ZnO films. In addition, we applied the chemical imprinting on Li doped ZnO thin films for high performance TFTs fabrication. The representative micro-patterned Li doped ZnO TFTs showed a field effect mobility of 4.2 cm(2) V(-1) s(-1) after sintering at 300 °C.