ABSTRACT
Fabrication, characterization, and laser performance of an Yb:Lu2O3 planar waveguide laser are reported. Pulsed laser deposition was employed to grow an 8 µm-thick Yb-doped lutetia waveguide on a YAG substrate. X-ray diffraction was used to determine the crystallinity, and spectroscopic characterization showed the absorption and emission cross-sections were indistinguishable from those reported for bulk material. When end-pumped by a diode-laser bar an output power of 7.4 W was achieved, limited by the available pump power, at a wavelength of 1033 nm and a slope efficiency of 38% with respect to the absorbed pump power.
ABSTRACT
In this Letter, we present a passively Q-switched Yb:Y2O3 waveguide laser using evanescent-field interaction with an atmospheric-pressure-chemical-vapor-deposited graphene saturable absorber. The waveguide, pumped by a broad area diode laser, produced an average output power of 456 mW at an absorbed power of 4.1 W. The corresponding pulse energy and peak power were 330 nJ and 2 W, respectively. No graphene damage was observed, demonstrating the suitability of top-deposited graphene for high-power operation.
Subject(s)
Graphite , Lasers, Solid-State , Optical Phenomena , Absorption, Physicochemical , Electrical Equipment and Supplies , Graphite/chemistryABSTRACT
Fabrication, characterization and laser performance of a Watt-level ytterbium-doped yttria waveguide laser is presented. The waveguide was grown onto a YAG substrate by pulsed laser deposition and features a 6 µm thick ytterbium-doped yttria layer sandwiched between two 3 µm undoped yttria layers. The laser deposited film was characterized by X-ray diffraction, showing a high degree of crystallinity and analyzed spectroscopically, showing performance indistinguishable from previously reported bulk material. When pumped with 8.5 W from a broad area diode laser the waveguide laser produces 1.2 W of output at 1030 nm.
ABSTRACT
The first, to the best of our knowledge, Q-switched operation of a pulsed-laser-deposited waveguide laser is presented. A clad Yb:Y(2)O(3) waveguide was Q-switched using an output coupling mirror coated with a single layer of graphene deposited by atmospheric pressure chemical vapor deposition. During continuous-wave operation, a maximum power of 83 mW at a slope efficiency of 25% was obtained. During Q-switched operation, pulses as short as 98 ns were obtained at a repetition rate of 1.04 MHz and a central wavelength of 1030.8 nm.
Subject(s)
Graphite/chemistry , Lasers , Signal Processing, Computer-Assisted/instrumentation , Surface Plasmon Resonance/instrumentation , Ytterbium/chemistry , Absorption, Radiation , Equipment Design , Equipment Failure Analysis , Graphite/radiation effects , Radiation Dosage , Ytterbium/radiation effectsABSTRACT
We demonstrate the first Tm-doped yttria planar waveguide laser to our knowledge, grown by pulsed laser deposition. A maximum output power of 35 mW at 1.95 µm with 9% slope efficiency was achieved from a 12 µm-thick film grown on a Y(3)Al(5)O(12) substrate.
