Prototype of a sensor for simultaneous monitoring of water level and temperature of rivers in the Amazon using FBG.

This work proposes an optical fiber sensor capable of simultaneously determining the variation in the level and temperature of the waters of rivers in the Amazon using two in Fibers Bragg Grating (FBG) coupled to a metallic bellows structure, which was experimentally demonstrated in terms of the characterization of FBGs, where one of them is a temperature compensator. The system was simulated according to the Coupled Modes Theory (CMT) and the Transfer Matrix Method (TMM) and experimentally the sensitivity of the sensors was analyzed from the wavelength displacement measurements, simultaneously varying the deformation and temperature. The experimental results show a sensitivity of 9.2 pm/cm and water level measurements up to the limit of 3.95 m with a wavelength variation of 3.69 nm for the strain sensor. The proposed sensor is simple and has enormous potential to be used to monitor the level of rivers in the Amazon in areas at risk of flooding.

Electrical transport properties of InAs nanowires synthesized by a solvothermal method.

Nanowires are widely considered to be key elements in future disruptive electronics and photonics. This paper presents the first detailed study of transport mechanisms in single-crystalline InAs nanowires synthesized by a cheap solvothermal wet chemical method. From detailed analyses of temperature-dependent current-voltage characteristics, it was observed that contacted nanowires operate in a linear transport regime at biases below a critical cross-over voltage. For larger biases, the transport changes to space-charge-limited conduction assisted by traps. The characteristic parameters such as free electron concentration, trap concentration and energy distribution, and electron mobility were all calculated. It was demonstrated that the nanowires have key electrical properties comparable to those of InAs nanowires grown by molecular beam epitaxy. Our results might pave the way for cheap disruptive low-dimensional electronics such as resistive switching devices.

Evaluation of carrier density and mobility in Mn ion-implanted GaAs:Zn nanowires by Raman spectroscopy.

The fabrication of complex nanoscale electronics with reduced dimensions poses challenges on novel techniques to accurately determine fundamental electronic parameters. In this article, we present a universal contactless method based on Raman scattering for measuring the mobility and hole concentration independently in GaAs:Zn and Mn ion-implanted GaAs:Zn nanowires, potentially of great interest for spintronics applications. Clear coupled longitudinal optical phonon-plasmon modes were recorded and fitted with a dielectric function, based on the Drude model, which includes contributions from both plasmons and phonons. From the fitting, we extract accurate values of the plasma frequency and plasma damping constant from which we directly calculate the hole density and mobility, respectively. The extracted mobilities were also used as input data for analysis of complementary four-probe transport measurements, where the corresponding hole concentrations could be calculated and found to be in good agreement with those extracted directly from the Raman data. We also investigated the influence of annealing of the GaAs:Zn nanowires on the hole concentration and mobility and found strong indications of thermally activated defects related to a formed crystalline As/oxide shell around the nanowires. The method proposed here is extremely powerful for the characterization of nanoelectronics in general, and nanospintronics in particular for which Hall measurements are difficult to pursue due to problems related to contact formation, as well as to inherent magnetic properties of the devices.

Biosorption of Methylene Blue Dye Using Natural Biosorbents Made from Weeds.

The purpose of this work is to make use of vegetables that, although widely found in nature, there are few applications. The weeds used here, Cyanthilium cinereum (L.) H. Rob (CCLHR) and Paspalum maritimum (PMT) found in the Amazon region of Belém state of Pará-Brazil, contribute to the problem of water contamination by the removal of the methylene blue dye through the biosorption process, taking advantage of other materials for economic viability and processing. The influences of parameters such as, biosorbent dose, contact time, and initial concentration of dye were examined. The characterizations were realized using SEM to verify the morphology of the material and spectroscopy in the FTIR region. As for the adsorption mechanism, the physical adsorption mechanism prevailed. The time required for the system to reach equilibrium for both biosorbents was from 50 min, following a kinetics described by the pseudo-second order model. The adsorption isotherm data for PMT were better adjusted to the Langmuir model and the biosorption capacity (qmax) value was (56.1798 mg/g). CCLHR was better adjusted to the Freundlich model and its maximum biosorption capacity was 76.3359 mg/g. Thus, these weed species are promising for the biosorption of methylene blue dye in effluents.

Raman characterization of single-crystalline Ga0.96Mn0.04As:Zn nanowires realized by ion-implantation.

Recent progress in the realization of magnetic GaAs nanowires (NWs) doped with Mn has attracted a lot of attention due to their potential application in spintronics. In this work, we present a detailed Raman investigation of the structural properties of Zn doped GaAs (GaAs:Zn) and Mn-implanted GaAs:Zn (Ga0.96Mn0.04As:Zn) NWs. A significant broadening and redshift of the optical TO and LO phonon modes are observed for these NWs compared to as-grown undoped wires, which is attributed to strain induced by the Zn/Mn doping and to the presence of implantation-related defects. Moreover, the LO phonon modes are strongly damped, which is interpreted in terms of a strong LO phonon-plasmon coupling, induced by the free hole concentration. Moreover, we report on two new interesting Raman phonon modes (191 and 252 cm-1) observed in Mn ion-implanted NWs, which we attribute to Eg (TO) and A1g (LO) vibrational modes in a sheet layer of crystalline arsenic present on the surface of the NWs. This conclusion is supported by fitting the observed Raman shifts for the SO phonon modes to a theoretical dispersion function for a GaAs NW capped with a dielectric shell.

Phase Transition in all-trans-ß-Carotene Crystal: Temperature-Dependent Raman Spectra.

In this study, we studied the stability of an all-trans-ß-carotene single crystal using Raman spectroscopy with line excitation at 632.8 nm, in the temperature range 20­300 K. The Raman spectra exhibit clear modifications in the spectral range of the lattice and internal vibrational modes. The temperature dependence of the most intense vibrational modes ν1 (1511 cm(­1)) and ν2 (1156 cm(­1)) that are related to the C═C and C­C stretching vibrations of the polyene chain, respectively, shows an upward shift on the Raman modes. This behavior is similar to that stated in the theoretical work of Wei-Long Liu et al. We conclude that the all-trans-ß-carotene crystal undergoes a temperature-induced phase transition at approximately 219 K. This transition is interpreted as a rotation experienced by ß-ring groups at each end of the all-trans-ß-carotene molecule around the dihedral angle. At low temperatures, the new molecular configuration affects the sliding plane of the space group C2h(5)(P2(1)/n), and the phase transition leads to an unchanged monoclinic structure; however, the original space group is possibly lowered to the space group C2. In the temperature range 200­220 K, the spectral ratio (S) of the integrated intensities of the spectral modes around the symmetric and asymmetric stretching wavenumbers of the methyl group (CH3) changes as a function of temperature in agreement with the phase transition. Furthermore, according to phase transition undergone by the all-trans-ß-carotene, the thermal results obtained by differential scanning calorimetry show an exothermic process that occurs near the transition temperature assigned by the Raman spectra.

Magnetic polarons and large negative magnetoresistance in GaAs nanowires implanted with Mn ions.

We report on low-temperature magnetotransport and SQUID measurements on heavily doped Mn-implanted GaAs nanowires. SQUID data recorded at low magnetic fields exhibit clear signs of the onset of a spin-glass phase with a transition temperature of about 16 K. Magnetotransport experiments reveal a corresponding peak in resistance at 16 K and a large negative magnetoresistance, reaching 40% at 1.6 K and 8 T. The negative magnetoresistance decreases at elevated temperatures and vanishes at about 100 K. We interpret our transport data in terms of spin-dependent hopping in a complex magnetic nanowire landscape of magnetic polarons, separated by intermediate regions of Mn impurity spins, forming a paramagnetic/spin-glass phase.

Hopping conduction in Mn ion-implanted GaAs nanowires.

We report on temperature-dependent charge transport in heavily doped Mn(+)-implanted GaAs nanowires. The results clearly demonstrate that the transport is governed by temperature-dependent hopping processes, with a crossover between nearest neighbor hopping and Mott variable range hopping at about 180 K. From detailed analysis, we have extracted characteristic hopping energies and corresponding hopping lengths. At low temperatures, a strongly nonlinear conductivity is observed which reflects a modified hopping process driven by the high electric field at large bias.

A new route toward semiconductor nanospintronics: highly Mn-doped GaAs nanowires realized by ion-implantation under dynamic annealing conditions.

We report on highly Mn-doped GaAs nanowires (NWs) of high crystalline quality fabricated by ion beam implantation, a technique that allows doping concentrations beyond the equilibrium solubility limit. We studied two approaches for the preparation of Mn-doped GaAs NWs: First, ion implantation at room temperature with subsequent annealing resulted in polycrystalline NWs and phase segregation of MnAs and GaAs. The second approach was ion implantation at elevated temperatures. In this case, the single-crystallinity of the GaAs NWs was maintained, and crystalline, highly Mn-doped GaAs NWs were obtained. The electrical resistance of such NWs dropped with increasing temperature (activation energy about 70 meV). Corresponding magnetoresistance measurements showed a decrease at low temperatures, indicating paramagnetism. Our findings suggest possibilities for future applications where dense arrays of GaMnAs nanowires may be used as a new kind of magnetic material system.