[4]Rhombene: Solution-Phase Synthesis and Application for Distributed Feedback Lasers With Emission Beyond 830 nm.

Graphene-like molecules with multiple zigzag edges are emerging as promising gain materials for organic lasers. Their emission wavelengths can vary widely, ranging from visible to near-infrared (NIR), as molecular size increases. Specifically, rhombus-shaped molecular graphenes with two pairs of parallel zigzag edges, known as [n]rhombenes, are excellent candidates for NIR lasers due to their small energy gaps. However, synthesizing large-size rhombenes with emission beyond 800 nm in solution remains a significant challenge. In this study, we present a straightforward synthesis of an aryl-substituted [4]rhombene derivative, [4]RB-Ar, using a method that combines intramolecular radical-radical coupling with Bi(OTf)3-mediated cyclization of vinyl ethers. The structure of [4]RB-Ar was confirmed through X-ray crystallographic analysis. Bond length analysis and theoretical calculations indicate that aromatic sextets are predominantly localized along the molecule's long axis. Significantly, [4]RB-Ar demonstrates narrow amplified spontaneous emission at around 834 nm when dispersed in polystyrene thin films. Moreover, solution-processed distributed feedback lasers employing [4]RB-Ar as the active gain material display tunable narrow emissions in the range of 830 to 844 nm.

Large Biaxial Compressive Strain Tuning of Neutral and Charged Excitons in Single-Layer Transition Metal Dichalcogenides.

The absorption and emission of light in single-layer transition metal dichalcogenides are governed by the formation of excitonic quasiparticles. Strain provides a powerful technique to tune the optoelectronic properties of two-dimensional materials and thus to adjust their exciton energies. The effects of large compressive strain in the optical spectrum of two-dimensional (2D) semiconductors remain rather unexplored compared to those of tensile strain, mainly due to experimental constraints. Here, we induced large, uniform, biaxial compressive strain (∼1.2%) by cooling, down to 10 K, single-layer WS2, MoS2, WSe2, and MoSe2 deposited on polycarbonate substrates. We observed a significant strain-induced modulation of neutral exciton energies, with blue shifts up to 160 meV, larger than in any previous experiments. Our results indicate a remarkably efficient transfer of compressive strain, demonstrated by gauge factor values exceeding previous results and approaching theoretical expectations. At low temperatures, we investigated the effect of compressive strain on the resonances associated with the formation of charged excitons. In WS2, a notable reduction of gauge factors for charged compared to neutral excitons suggests an increase in their binding energy, which likely results from the effects of strain added to the influence of the polymeric substrate.