ABSTRACT
Piezoelectric thin film AlN has great potential for on-chip devices such as thin-film resonator (TFR)-based bandpass filters. The AlN electromechanical coupling constant, K(2), is an important material parameter that determines the maximum possible bandwidth for bandpass filters. Using a previously published extraction technique, the bulk c-axis electromechanical coupling constant was measured as a function of the AlN X-ray diffraction rocking curve [full width at half maximum (FWHM)]. For FWHM values of less than approximately 4 degrees , K (2) saturates at approximately 6.5%, equivalent to the value for epitaxial AlN. For FWHM values >4 degrees , K(2) gradually decreases to approximately 2.5% at a FWHM of 7.5 degrees . These results indicate that the maximum possible bandwidth for TFR-based bandpass filters using polycrystalline AlN is approximately 80 MHz and that, for 60-MHz bandwidth PCS applications, an AlN film quality of >5.5 degrees FWHM is required.
ABSTRACT
We describe a variety of technologies for patterning transmissive and reflective soft x-ray projectionlithography masks containing features as small as 0.1 µm. The transmission masks fabricated for use at 13 nm are of one type, a Ge-absorbing layer patterned on a boron-doped Si membrane. Reflective masks were patterned by various methods that included absorbing layers formed on top of multilayer reflectors, multilayer-reflector-coating removal by reactive ion etching, and ion damage of multilayer regions by ion implantation. For the first time, we believe, a process for absorber repair that does not significantly damage the reflectance of the multilayer coating on the reflection mask is demonstrated.
