DFT-aided machine learning-based discovery of magnetism in Fe-based bimetallic chalcogenides.

With the technological advancement in recent years and the widespread use of magnetism in every sector of the current technology, a search for a low-cost magnetic material has been more important than ever. The discovery of magnetism in alternate materials such as metal chalcogenides with abundant atomic constituents would be a milestone in such a scenario. However, considering the multitude of possible chalcogenide configurations, predictive computational modeling or experimental synthesis is an open challenge. Here, we recourse to a stacked generalization machine learning model to predict magnetic moment (µB) in hexagonal Fe-based bimetallic chalcogenides, FexAyB; A represents Ni, Co, Cr, or Mn, and B represents S, Se, or Te, and x and y represent the concentration of respective atoms. The stacked generalization model is trained on the dataset obtained using first-principles density functional theory. The model achieves MSE, MAE, and R2 values of 1.655 (µB)2, 0.546 (µB), and 0.922 respectively on an independent test set, indicating that our model predicts the compositional dependent magnetism in bimetallic chalcogenides with a high degree of accuracy. A generalized algorithm is also developed to test the universality of our proposed model for any concentration of Ni, Co, Cr, or Mn up to 62.5% in bimetallic chalcogenides.

Phase transition from a nonmagnetic to a ferromagnetic state in a twisted bilayer graphene nanoflake: the role of electronic pressure on the magic-twist.

The electronic properties of a bilayer graphene nanoflake (BLGNF) depend sensitively upon the strength of the inter-layer electronic coupling (IEC) energy. Upon tuning the IEC via changing the twist angle between the layer, a ferromagnetic gap state emerges in a BLGNF due to spontaneous symmetry breaking at the magic-twist. Herein, using first-principles density functional theory, we demonstrate the magic twist angle (θM) in a bilayer graphene nanoflake at which the transition from a nonmagnetic to a ferromagnetic phase occurs can be tuned by exerting uniaxial electronic pressure (Pe). Electronic pressure, which provides another route to control the IEC, is simulated by varying the interlayer spacing in the nanoflake. Our result shows a Pe of 0.125 GPa corresponding to interlayer spacing (h) of 3.58 Å yielding a magic twist angle of ∼1° and a negative value of Pe (-0.042 GPa) at h = 3.38 Å producing a θM of ∼2.4°. The higher value of θM at a negative Pe (smaller h) is attributed to an increase in the energy gap due to strong inter-layer electronic coupling energy in the nanoflake under uniaxial compression. This finding in the nanoflake agrees with the experimental observation in two-dimensional bilayer graphene (M. Yankowitz, S. Chen, H. Polshyn, Y. Zhang, K. Watanabe, T. Taniguchi, D. Graf, A. F. Young and C. R. Dean, Science, 2019, 363, 1059-1064) that indicated an increase in the magic angle value for the phase transition upon application of hydrostatic pressure.

Emergence of Ferromagnetism Due to Spontaneous Symmetry Breaking in a Twisted Bilayer Graphene Nanoflex.

Twisted bilayer graphene exhibits many intriguing behaviors ranging from superconductivity to the anomalous Hall effect to ferromagnetism at a magic angle of ∼1°. Here, using a first-principles approach, we reveal ferromagnetism in a twisted bilayer graphene nanoflex. Our results demonstrate that when the energy gap of a twisted nanoflex approaches zero, electronic instability occurs and a ferromagnetic gap state emerges spontaneously to lower the energy. Unlike the observed ferromagnetism at a magic angle in the graphene bilayer, we notice the ferromagnetic phase appearing aperiodically between 0 and 30° in the twisted nanoflex. The origin of electronic instability at various twist angles is ascribed to the several higher-symmetry phases that are broken to lower the energy resulting from an aperiodic modulation of the interlayer interaction in the nanoflex. Besides unraveling a spin-pairing mechanism for the reappearance of the nonmagnetic phase, we have found orbitals at the boundary of nanoflex contributing to ferromagnetism.

Origin of Magnetism in γ-FeSi2/Si(111) Nanostructures.

Magnetism has recently been observed in nominally nonmagnetic iron disilicide in the form of epitaxial γ-FeSi2 nanostructures on Si(111) substrate. To explore the origin of the magnetism in γ-FeSi2/Si(111) nanostructures, we performed a systematic first-principles study based on density functional theory. Several possible factors, such as epitaxial strain, free surface, interface, and edge, were examined. The calculations show that among these factors, only the edge can lead to the magnetism in γ-FeSi2/Si(111) nanostructures. It is shown that magnetism exhibits a strong dependency on the local atomic structure of the edge. Furthermore, magnetism can be enhanced by creating multiple-step edges. In addition, the results also reveal that edge orientation can have a significant effect on magnetism. These findings, thus, provide insights into a strategy to tune the magnetic properties of γ-FeSi2/Si(111) nanostructures through controlling the structure, population, and orientation of the edges.

Cr-Doped Ge-Core/Si-Shell Nanowire: An Antiferromagnetic Semiconductor.

An antiferromagnet offers many important functionalities such as opportunities for electrical control of magnetic domains, immunity from magnetic perturbations, and fast spin dynamics. Introducing some of these intriguing features of an antiferromagnet into a low dimensional semiconductor core-shell nanowire offers an exciting pathway for its usage in antiferromagnetic semiconductor spintronics. Here, using a quantum mechanical approach, we predict that the Cr-doped Ge-core/Si-shell nanowire behaves as an antiferromagnetic semiconductor. The origin of antiferromagnetic spin alignments between Cr is attributed to the superexchange interaction mediated by the pz orbitals of the Ge atoms that are bonded to Cr. A weak spin-orbit interaction was found in this material, suggesting a longer spin coherence length. The spin-dependent quantum transport calculations in the Cr-doped nanowire junction reveals a switching feature with a high ON/OFF current ratio (∼41 times higher for the ON state at a relatively small bias of 0.83 V).

Spin filtering with Mn-doped Ge-core/Si-shell nanowires.

Incorporating spin functionality into a semiconductor core-shell nanowire that offers immunity from the substrate effect is a highly desirable step for its application in next generation spintronics. Here, using first-principles density functional theory that does not make any assumptions of the electronic structure, we predict that a very small amount of Mn dopants in the core region of the wire can transform the Ge-Si core-shell semiconductor nanowire into a half-metallic ferromagnet that is stable at room temperature. The energy band structures reveal a semiconducting behavior for one spin direction while the metallic behavior for the other, indicating 100% spin polarization at the Fermi energy. No measurable shifts in energy levels in the vicinity of Fermi energy are found due to spin-orbit coupling, which suggests that the spin coherence length can be much higher in this material. To further assess the use of this material in a practical device setting, we have used a quantum transport approach to calculate the spin-filtering efficiency for a channel made out of a finite nanowire segment. Our calculations yield an efficiency more than 90%, which further confirms the excellent spin-selective properties of our newly tailored Mn-doped Ge-core/Si-shell nanowires.

New Near-infrared Fluorescent Probes with Single-photon Anti-Stokes-shift Fluorescence for Sensitive Determination of pH Variances in Lysosomes with a Double-Checked Capability.

Two near-infrared luminescent probes with Stokes-shift and single-photon anti-Stokes-shift fluorescence properties for sensitive determination of pH variance in lysosomes have been synthesized. A morpholine residue in probe A which serves as a targeting group for lysosomes in viable cells was attached to the fluorophores via a spirolactam moiety while a mannose residue was ligated to probe B resulting in increased biocompatibility and solubility in water. Probes A and B contain closed spirolactam moieties, and show no Stokes-shift or anti-Stokes-shift fluorescence under neutral or alkali conditions. However, the probes incrementally react to pH variance from 7.22 to 2.76 with measurable increases in both Stokes-shift and anti-Stokes-shift fluorescence at 699 nm and 693 nm under 645 nm and 800 nm excitation, respectively. This acid-activated fluorescence is produced by the breaking of the probe spirolactam moiety, which greatly increased overall π-conjugation in the probes. These probes possess upconversion near-infrared fluorescence imaging advantages including minimum cellular photo-damage, tissue penetration, and minimum biological fluorescence background. They display excellent photostability with low dye photobleaching and show good biocompatibility. They are selective and capable of detecting pH variances in lysosomes at excitation with two different wavelengths, i.e., 645 and 800 nm.

Catching the electron in action in real space inside a Ge-Si core-shell nanowire transistor.

Catching the electron in action in real space inside a semiconductor Ge-Si core-shell nanowire field effect transistor (FET), which has been demonstrated (J. Xiang, W. Lu, Y. Hu, Y. Wu, H. Yan and C. M. Lieber, Nature, 2006, 441, 489) to outperform the state-of-the-art metal oxide semiconductor FET, is central to gaining unfathomable access into the origin of its functionality. Here, using a quantum transport approach that does not make any assumptions on electronic structure, charge, and potential profile of the device, we unravel the most probable tunneling pathway for electrons in a Ge-Si core-shell nanowire FET with orbital level spatial resolution, which demonstrates gate bias induced decoupling of electron transport between the core and the shell region. Our calculation yields excellent transistor characteristics as noticed in the experiment. Upon increasing the gate bias beyond a threshold value, we observe a rapid drop in drain current resulting in a gate bias driven negative differential resistance behavior and switching in the sign of trans-conductance. We attribute this anomalous behavior in drain current to the gate bias induced modification of the carrier transport pathway from the Ge core to the Si shell region of the nanowire channel. A new experiment involving a four probe junction is proposed to confirm our prediction on gate bias induced decoupling.

Unlocking the Origin of Superior Performance of a Si-Ge Core-Shell Nanowire Quantum Dot Field Effect Transistor.

The sustained advancement in semiconducting core-shell nanowire technology has unlocked a tantalizing route for making next generation field effect transistor (FET). Understanding how to control carrier mobility of these nanowire channels by applying a gate field is the key to developing a high performance FET. Herein, we have identified the switching mechanism responsible for the superior performance of a Si-Ge core-shell nanowire quantum dot FET over its homogeneous Si counterpart. A quantum transport approach is used to investigate the gate-field modulated switching behavior in electronic current for ultranarrow Si and Si-Ge core-shell nanowire quantum dot FETs. Our calculations reveal that for the ON state, the gate-field induced transverse localization of the wave function restricts the carrier transport to the outer (shell) layer with the pz orbitals providing the pathway for tunneling of electrons in the channels. The higher ON state current in the Si-Ge core-shell nanowire FET is attributed to the pz orbitals that are distributed over the entire channel; in the case of Si nanowire, the participating pz orbital is restricted to a few Si atoms in the channel resulting in a smaller tunneling current. Within the gate bias range considered here, the transconductance is found to be substantially higher in the case of a Si-Ge core-shell nanowire FET than in a Si nanowire FET, which suggests a much higher mobility in the Si-Ge nanowire device.

Near-Infrared Fluorescent Probes with Large Stokes Shifts for Sensing Zn(II) Ions in Living Cells.

We report two new near-infrared fluorescent probes based on Rhodol counterpart fluorophore platforms functionalized with dipicolylamine Zn(II)-binding groups. The combinations of the pendant amines and fluorophores provide the probes with an effective three-nitrogen-atom and one-oxygen-atom binding motif. The fluorescent probes with large Stokes shifts offer sensitive and selective florescent responses to Zn(II) ions over other metal ions, allowing a reversible monitoring of Zn(II) concentration changes in living cells, and detecting intracellular Zn(II) ions released from intracellular metalloproteins.

BODIPY-Based Fluorescent Probes for Sensing Protein Surface-Hydrophobicity.

Mapping surface hydrophobic interactions in proteins is key to understanding molecular recognition, biological functions, and is central to many protein misfolding diseases. Herein, we report synthesis and application of new BODIPY-based hydrophobic sensors (HPsensors) that are stable and highly fluorescent for pH values ranging from 7.0 to 9.0. Surface hydrophobic measurements of proteins (BSA, apomyoglobin, and myoglobin) by these HPsensors display much stronger signal compared to 8-anilino-1-naphthalene sulfonic acid (ANS), a commonly used hydrophobic probe; HPsensors show a 10- to 60-fold increase in signal strength for the BSA protein with affinity in the nanomolar range. This suggests that these HPsensors can be used as a sensitive indicator of protein surface hydrophobicity. A first principle approach is used to identify the molecular level mechanism for the substantial increase in the fluorescence signal strength. Our results show that conformational change and increased molecular rigidity of the dye due to its hydrophobic interaction with protein lead to fluorescence enhancement.

Boron nitride nanotubes for spintronics.

With the end of Moore's law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR) effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT), which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics.

Fluorinated boron nitride nanotube quantum dots: a spin filter.

Spin filtering requires a selective transmission of spin-polarized carriers. A perfect spin filter allows all majority (or minority) spin carriers to pass through a channel while blocking the minority (or majority) carriers. The quest for a novel low-dimensional metal-free magnetic material that would exhibit magnetism at a higher temperature with an excellent spin filtering property has been intensively pursued. Herein, using a first-principles approach, we demonstrate that the fluorinated boron nitride nanotube (F-BNNT) quantum dot, which is ferromagnetic in nature, can be used as a perfect spin filter with efficiency as high as 99.8%. Our calculation shows that the ferromagnetic spin ordering in F-BNNT is stable at a higher temperature. Comparison of the conductance value of the F-BNNT quantum dot with that of the pristine BNNT quantum dot reveals a significantly higher conductance in F-BNNT, which is in very good agreement with the experimental report (Tang, C., et al. J. Am. Chem. Soc. 2005, 127, 6552).

Electrical tuning of spin current in a boron nitride nanotube quantum dot.

Controlling spin current and magnetic exchange coupling by applying an electric field and achieving high spin injection efficiency at the same time in a nanostructure coupled to ferromagnetic electrodes have been the outstanding challenges in nanoscale spintronics. A relentless quest is going on to find new low-dimensional materials with tunable spin dependent properties to address these challenges. Herein, we predict, from first-principles, the transverse-electric-field induced switching in the sign of exchange coupling and tunnel magneto-resistance in a boron nitride nanotube quantum dot attached to ferromagnetic nickel contacts. An orbital dependent density functional theory in conjunction with a single particle Green's function approach is used to study the spin dependent current. The origin of switching is attributed to the electric field induced modification of magnetic exchange interaction at the interface caused by the Stark effect. In addition, spin injection efficiency is found to vary from 61% to 89% depending upon the magnetic configurations at the electrodes. These novel findings are expected to open up a new pathway for the application of boron nitride nanotube quantum dots in next generation nanoscale spintronics.

What determines the sign reversal of magnetoresistance in a molecular tunnel junction?

The observations of both positive and negative signs in tunneling magnetoresistance (TMR) for the same organic spin-valve structure have baffled researchers working in organic spintronics. In this article, we provide an answer to this puzzle by exploring the role of metal-molecule interface on TMR in a single molecular spin-valve junction. A planar organic molecule sandwiched between two nickel electrodes is used to build a prototypical spin-valve junction. A parameter-free, single-particle Green's function approach in conjunction with a posteriori, spin-unrestricted density functional theory involving a hybrid orbital-dependent functional is used to calculate the spin-polarized current. The effect of external bias is explicitly included to investigate the spin-valve behavior. Our calculations show that only a small change in the interfacial distance at the metal-molecule junction can alter the sign of the TMR from a positive to a negative value. By changing the interfacial distance by 3%, the number of participating eigenchannels as well as their orbital characteristics changes for the antiparallel configuration, leading to the sign reversal in TMR.

Origin of negative differential resistance in a strongly coupled single molecule-metal junction device.

A new mechanism is proposed to explain the origin of negative differential resistance (NDR) in a strongly coupled single molecule-metal junction. A first-principles quantum transport calculation in a Fe-terpyridine linker molecule sandwiched between a pair of gold electrodes is presented. Upon increasing the applied bias, it is found that a new phase in the broken symmetry wave function of the molecule emerges from the mixing of occupied and unoccupied molecular orbitals. As a consequence, a nonlinear change in the coupling between the molecule and the lead is evolved resulting in NDR. This model can be used to explain NDR in other classes of metal-molecule junction devices.

Room-temperature ferromagnetism in doped face-centered cubic fe nanoparticles.

The magnetism of Fe and its alloys has been at the center of scientific and technological interest for decades. Along with the ferromagnetic nature of body-centered cubic Fe, the magnetic properties of face-centered cubic (fcc) Fe have attracted much attention. It is well known that fcc Fe is thermodynamically unstable at ambient conditions and not ferromagnetic. Contrary to what is known, we report that elongated nanoparticles of fcc Fe, grown within graphitic nanotubes, remain structurally stable and appear ferromagnetic at room temperature. The magnetic moment (2+/-0.5 microB) in these nanoparticles and the hyperfine fields for two different components of 57Fe (33 and 21 T), measured by Mössbauer spectroscopy, are explained by carbon interstitials in the expanded fcc Fe lattice, that is, FeC(x) where x approximately 0.10, which result in the formation of a dominant Fe4C stoichiometry. First-principles calculations suggest that the ferromagnetism observed in the fcc Fe is related to both lattice expansion and charge transfer between iron and carbon. The understanding of strain- and dopant-induced ferromagnetism in the fcc Fe could lead to the development of new fcc Fe-based alloys for magnetic applications.