ABSTRACT
Cation incorporation emerges as a promising approach for improving the performance of the kesterite Cu2ZnSn(S,Se)4 (CZTSSe) device. Herein, we report indium (In) doping using the chemical bath deposition (CBD) technique to enhance the optoelectronic properties of CZTSSe thin-film solar cells (TFSCs). To incorporate a small amount of the In element into the CZTSSe absorber thin films, an ultrathin (<10 nm) layer of In2S3 is deposited on soft-annealed precursor (Zn-Sn-Cu) thin films prior to the sulfo-selenization process. The successful doping of In improved crystal growth and promoted the formation of larger grains. Furthermore, the CZTSSe TFSCs fabricated with In doping exhibited improved device performance. In particular, the In-CZTSSe-2-based device showed an improved power conversion efficiency (PCE) of 9.53%, open-circuit voltage (Voc) of 486 mV, and fill factor (FF) of 61% compared to the undoped device. Moreover, the small amount of In incorporated into the CZTSSe absorber demonstrated reduced nonradiative recombination, improved carrier separation, and enhanced carrier transport properties. This study suggests a simple and effective way to incorporate In to achieve high efficiency and low Voc loss.
ABSTRACT
The present investigation deals with controlled synthesis of nanostructured NiCo2O4 thin films directly on stainless steel substrates by facile and economical chemical bath deposition technique, without adding a surfactant or a binder. The consequences of different compositions of solvents on morphological and electrochemical properties have been studied systematically. We used different solvent composition as Double Distilled Water (DDW), DDW:Ethanol (1:1) and DDW: N, N dimethylformamide (1:1). The films have been named as NCO-W for DDW, NCO-WE for DDW: Ethanol (1:1) solvent and NCO-WD for DDW: N, N dimethylformamide (1:1) solvent. The morphologies of NiCo2O4 thin films modify substantially with change in a solvent. NCO-W exhibited the spikes of Crossandra infundibuliformis like nanostructures. The NCO-WE favored the formation of uniformly distributed leaf-like nanostructure whereas NCO-WD showed randomly oriented nanoplates all over the surface area. The Electrochemical performance of these NiCo2O4 thin films were studied using cyclic voltammetry, chronopotentiometry, and electrochemical impedance spectroscopy techniques. The NCO-W, NCO-WE and NCO-WD electrodes showed specific capacitance values of 271, 553 and 140 F/g respectively at the current density of 0.5 mA/cm2 and excellent capacitance retention of 90%, 91% and 80% after 2000 cycles for NCO-W, NCO-WE and NCO-WD samples respectively. This result reveals that NiCo2O4 is a prominent electrode material for supercapacitor application.
ABSTRACT
Quantum dot solar cells (QDSCs) are attractive technology for commercialization, owing to various advantages, such as cost effectiveness, and require relatively simple device fabrication processes. The properties of semiconductor quantum dots (QDs), such as band gap energy, optical absorption, and carrier transport, can be effectively tuned by modulating their size and shape. Two types of architectures of QDSCs have been developed: 1)â photoelectric cells (PECs) fabricated from QDs sensitized on nanostructured TiO2 , and 2)â photovoltaic cells fabricated from a Schottky junction and heterojunction. Different types of semiconductor QDs, such as a secondary, ternary, quaternary, and perovskite semiconductors, are used for the advancement of QDSCs. The major challenge in QDSCs is the presence of defects in QDs, which lead to recombination reactions and thereby limit the overall performance of the device. To tackle this problem, several strategies, such as the implementation of a passivation layer over the QD layer and the preparation of core-shell structures, have been developed. This review covers aspects of QDSCs that are essential to understand for further improvement in this field and their commercialization.
