Carbon Nanotube Based Robust and Flexible Solid-State Supercapacitor.

All solid-state flexible electrochemical double-layer capacitors (EDLCs) are crucial for providing energy options in a variety of applications, ranging from wearable electronics to bendable micro/nanotechnology. Here, we report on the development of robust EDLCs using aligned multiwalled carbon nanotubes (MWCNTs) grown directly on thin metal foils embedded in a poly(vinyl alcohol)/phosphoric acid (PVA/H3PO4) polymer gel. The thin metal substrate holding the aligned MWCNT assembly provides mechanical robustness and the PVA/H3PO4 polymer gel, functioning both as the electrolyte as well as the separator, provides sufficient structural flexibility, without any loss of charge storage capacity under flexed conditions. The performance stability of these devices was verified by testing them under straight and bent formations. A high value of the areal specific capacitance (CSP) of ∼14.5 mF cm-2 with an energy density of ∼1 µW h cm-2 can be obtained in these devices. These values are significantly higher (in some cases, orders of magnitude) than several graphene as well as single-walled nanotube-based EDLC's utilizing similar electrolytes. We further show that these devices can withstand multiple (∼2500) mechanical bending cycles, without losing their energy storage capacities and are functional within the temperature range of 20 to 70 °C. Several strategies for enhancing the capacitive charge storage, such as physically stacking (in parallel) individual devices, or postproduction thermal annealing of electrodes, are also demonstrated. These findings demonstrated in this article provide tremendous impetus toward the realization of robust, stackable, and flexible all solid-state supercapacitors.

Gate-Induced Metal-Insulator Transition in 2D van der Waals Layers of Copper Indium Selenide Based Field-Effect Transistors.

The existence of an exquisite phenomenon such as a metal-insulator transition (MIT) in two-dimensional (2D) systems, where completely different electronic functionalities in the same system can emerge simply by regulating parameters such as charge carrier density in them, is noteworthy. Such tunability in material properties can lead to several applications where precise tuning of function specific properties are desirable. Here, we report on our observation on the occurrence of MIT in the 2D material system of copper indium selenide (CuIn7Se11). Clear evidence of the metallic nature of conductivity (σ) under the influence of electrostatic doping via the gate, which crosses over to an insulating phase upon lowering the temperature, was observed by investigating the temperature and gate dependence of σ in CuIn7Se11 field-effect transistor devices. At higher charge carrier densities (n > 1012 cm-1), we found that σ ∼ (n)α with α ∼ 2, which suggests the presence of bare Coulomb impurity scattering within the studied range of temperature (280 K > T > 20 K). Our analysis of the conductivity data following the principles of percolation theory of transition where σ ∼ (n - nC)δ show that the critical percolation exponent δ(T) has average values ∼1.57 ± 0.27 and 1.02 ± 0.35 within the measured temperature range for the two devices and it is close to the 2D percolation exponent value of 1.33. We believe that the 2D MIT seen in our system is due to the charge density inhomogeneity caused by electrostatic doping and unscreened charge impurity scattering that leads to a percolation driven transition. The findings reported here for CuIn7Se11 system provide a different material platform to investigate MIT in 2D and are crucial in order to understand the fundamental basis of electronic interactions and charge-transport phenomenon in other unexplored 2D electron systems.

Low temperature photoconductivity of few layer p-type tungsten diselenide (WSe2) field-effect transistors (FETs).

We report on the low-temperature photoconductive properties of few layer p-type tungsten diselenide (WSe2) field-effect transistors (FETs) synthesized using the chemical vapor transport method. Photoconductivity measurements show that these FETs display room temperature photo-responsivities of ∼7 mAW-1 when illuminated with a laser of wavelength λ = 658 nm with a power of 38 nW. The photo-responsivities of these FETs showed orders of magnitude improvement (up to ∼1.1 AW-1 with external quantum efficiencies reaching as high as ∼188%) upon application of a gate voltage (V G = -60 V). A temperature dependent (100 K < T < 300 K) photoconductivity study reveals a weak temperature dependence of responsivity for these WSe2 phototransistors. We demonstrate that it is possible to obtain stable photo-responsivities of ∼0.76 ± 0.2 AW-1 (with applied V G = -60 V), at low temperatures in these FETs. These findings indicate the possibility of developing WSe2-based FETs for highly robust, efficient, and swift photodetectors with a potential for optoelectronic applications over a broad range of temperatures.