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1.
ACS Appl Mater Interfaces ; 14(5): 7063-7072, 2022 Feb 09.
Article in English | MEDLINE | ID: mdl-35077151

ABSTRACT

Organic field-effect transistors (OFETs) have shown great potential for applications that require low temperature deposition on large and flexible substrates. To increase their performance, in particular a high transconductance and transit frequency, the transistor channel length has to be scaled into the submicrometer regime, which can be easily achieved in vertical organic field effect transistors (VOFETs). However, despite high performance observed in VOFETs, these transistors usually suffer from short channel effects like weak saturation of the drain current and direct source-drain leakage resulting in large off currents. Here, we study the influence of the injection barrier at the source electrode on the OFF currents, on/off ratio, and transconductance of vertical OFETs. We use two semiconducting materials, 2,6-diphenyl anthracene (DPA), and C60 to vary the injection barrier at the source electrode and are able to show that increasing the Schottky barrier at the source electrode can decrease the direct source/drain leakage by 3 orders of magnitude. However, the increased injection barrier at the source electrode comes at the expense of an increased contact resistance, which in turn will decrease its transconductance and transit frequency. With the help of a 2D drift-diffusion simulation we show that the trade-off between low off currents and high transconductance is inherent to the current VOFET device setup and that new approaches have to be found to design VOFETs that combine good switching properties with high performance.

2.
Molecules ; 26(14)2021 Jul 12.
Article in English | MEDLINE | ID: mdl-34299509

ABSTRACT

The first study of the flexo-ionic effect, i.e., mechanical deformation-induced electric signal, of the recently discovered ionic liquid crystal elastomers (iLCEs) is reported. The measured flexo-ionic coefficients were found to strongly depend on the director alignment of the iLCE films and can be over 200 µC/m. This value is orders of magnitude higher than the flexo-electric coefficient found in insulating liquid crystals and is comparable to the well-developed ionic polymers (iEAPs). The shortest response times, i.e., the largest bandwidth of the flexo-ionic responses, is achieved in planar alignment, when the director is uniformly parallel to the substrates. These results render high potential for iLCE-based devices for applications in sensors and wearable micropower generators.

3.
Nat Commun ; 11(1): 2515, 2020 May 20.
Article in English | MEDLINE | ID: mdl-32433542

ABSTRACT

Organic Electrochemical Transistors are versatile sensors that became essential for the field of organic bioelectronics. However, despite their importance, an incomplete understanding of their working mechanism is currently precluding a targeted design of Organic Electrochemical Transistors and it is still challenging to formulate precise design rules guiding materials development in this field. Here, it is argued that current capacitive device models neglect lateral ion currents in the transistor channel and therefore fail to describe the equilibrium state of Organic Electrochemical Transistors. An improved model is presented, which shows that lateral ion currents lead to an accumulation of ions at the drain contact, which significantly alters the transistor behavior. Overall, these results show that a better understanding of the interface between the organic semiconductor and the drain electrode is needed to reach a full understanding of Organic Electrochemical Transistors.

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