Coupling between Pyroelectricity and Built-In Electric Field Enabled Highly Sensitive Infrared Phototransistor Based on InSe/WSe2/P(VDF-TrFE) Heterostructure.

The assorted utilization of infrared detectors induces the demand for more comprehensive and high-performance electronic devices that work at room temperature. The intricacy of the fabrication process with bulk material limits the exploration in this field. However, two-dimensional (2D) materials with a narrow band gap opening aid in infrared (IR) detection relatively, but the photodetection range is narrowed due to the inherent band gap. In this study, we report an unprecedented attempt at the coordinated use of both 2D heterostructure (InSe/WSe2) and the dielectric polymer (poly(vinylidene fluoride-trifluoroethylene), P(VDF-TrFE)) for both visible and IR photodetection in a single device. The remnant polarization due to the ferroelectric effect of the polymer dielectric enhances the photocarrier separation in the visible range, resulting in high photoresponsivity. On the other hand, the pyroelectric effect of the polymer dielectric causes a change in the device current due to the increased temperature induced by the localized heating effect of the IR irradiation, which results in the change of ferroelectric polarization and induces the redistribution of charge carriers. In turn, it changes the built-in electric field, the depletion width, and the band alignment across the p-n heterojunction interface. Consequently, the charge carrier separation and the photosensitivity are therefore enhanced. Through the coupling between pyroelectricity and built-in electric field across the heterojunction, the specific detectivity for the photon energy below the band gap of the constituent 2D materials can reach up to 1011 Jones, which is better than all reported pyroelectric IR detectors. The proposed approach combining the ferroelectric and pyroelectric effects of the dielectric as well as exceptional properties of the 2D heterostructures can spark the design of advanced and not-yet realized optoelectronic devices.

A Bi-Anti-Ambipolar Field Effect Transistor.

Multistate logic is recognized as a promising approach to increase the device density of microelectronics, but current approaches are offset by limited performance and large circuit complexity. We here demonstrate a route toward increased integration density that is enabled by a mechanically tunable device concept. Bi-anti-ambipolar transistors (bi-AATs) exhibit two distinct peaks in their transconductance and can be realized by a single 2D-material heterojunction-based solid-state device. Dynamic deformation of the device reveals the co-occurrence of two conduction pathways to be the origin of this previously unobserved behavior. Initially, carrier conduction proceeds through the junction edge, but illumination and application of strain can increase the recombination rate in the junction sufficiently to support an alternative carrier conduction path through the junction area. Optical characterization reveals a tunable emission pattern and increased optoelectronic responsivity that corroborates our model. Strain control permits the optimization of the conduction efficiency through both pathways and can be employed in quaternary inverters for future multilogic applications.

Modulating Charge Separation with Hexagonal Boron Nitride Mediation in Vertical Van der Waals Heterostructures.

Tuning the optical and electrical properties by stacking different layers of two-dimensional (2D) materials enables us to create unusual physical phenomena. Here, we demonstrate an alternative approach to enhance charge separation and alter physical properties in van der Waals heterojunctions with type-II band alignment by using thin dielectric spacers. To illustrate our working principle, we implement a hexagonal boron nitride (h-BN) sieve layer in between an InSe/GeS heterojunction. The optical transitions at the junctions studied by photoluminescence and the ultrafast pump-probe technique show quenching of emission without h-BN layers exhibiting an indirect recombination process. This quenching effect due to strong interlayer coupling was confirmed with Raman spectroscopic studies. In contrast, h-BN layers in between InSe and GeS show strong enhancement in emission, giving another degree of freedom to tune the heterojunction property. The two-terminal photoresponse study supports the argument by showing a large photocurrent density for an InSe/h-BN/GeS device by avoiding interlayer charge recombination. The enhanced charge separation with h-BN mediation manifests a photoresponsivity and detectivity of 9 × 102 A W-1 and 3.4 × 1014 Jones, respectively. Moreover, a photogain of 1.7 × 103 shows a high detection of electrons for the incident photons. Interestingly, the photovoltaic short-circuit current is switched from positive to negative, whereas the open-circuit voltage changes from negative to positive. Our proposed enhancement of charge separation with 2D-insulator mediation, therefore, provides a useful route to manipulate the physical properties of heterostructures and for the future development of high-performance optoelectronic devices.

Self-Sufficient and Highly Efficient Gold Sandwich Upconversion Nanocomposite Lasers for Stretchable and Bio-applications.

Multifunctional lanthanide-doped upconversion nanoparticles (UCNPs) have spread their wings in the fields of flexible optoelectronics and biomedical applications. One of the ongoing challenges lies in achieving UCNP-based nanocomposites, which enable a continuous-wave (CW) laser action at ultralow thresholds. Here, gold sandwich UCNP nanocomposites [gold (Au1)-UCNP-gold (Au2)] capable of exhibiting lasing at ultralow thresholds under CW excitation are demonstrated. The metastable energy-level characteristics of lanthanides are advantageous for creating population inversion. In particular, localized surface plasmon resonance-based electromagnetic hotspots in the nanocomposites and the huge enhancement of scattering coefficient for the formation of coherent closed loops due to multiple scattering facilitate the process of stimulated emissions as confirmed by theoretical simulations. The nanocomposites are subjected to stretchable systems for enhancing the lasing action (threshold ∼ 0.06 kW cm-2) via a light-trapping effect. The applications in bioimaging of HeLa cells and antibacterial activity (photothermal therapy) are demonstrated using the newly designed Au1-UCNP-Au2 nanocomposites.

Graphene Sandwich Stable Perovskite Quantum-Dot Light-Emissive Ultrasensitive and Ultrafast Broadband Vertical Phototransistors.

Dual-functional devices that can simultaneously detect light and emit light have a tremendous appeal for multiple applications, including displays, sensors, defense, and high-speed optical communication. Despite the tremendous efforts of scientists, the progress of integration of a phototransistor, where the built-in electric field separates the photogenerated excitons, and a light-emitting diode, where the radiative recombination can be enhanced by band offset, into a single device remains a challenge. Combining the superior properties of perovskite quantum dots (PQDs) and graphene, here we report a light-emissive, ultrasensitive, ultrafast, and broadband vertical phototransistor that can simultaneously act as an efficient photodetector and light emitter within a single device. The estimated value of the external quantum efficiency of the vertical phototransistor is ∼1.2 × 1010% with a photoresponsivity of >109 A W-1 and a response time of <50 µs, which exceed all the presently reported vertical phototransistor devices. We also demonstrate that the modulation of the Dirac point of graphene efficiently tunes both amplitude and polarity of the photocurrent. The device exhibits a green emission having a quantum efficiency of 5.6%. The moisture-insensitive and environmentally stable, light-emissive, ultrafast, and ultrasensitive broadband phototransistor creates a useful route for dual-functional optoelectronic devices.

Self-Healing Nanophotonics: Robust and Soft Random Lasers.

Self-healing technology promises a generation of innovation in cross-cutting subjects ranging from electronic skins, to wearable electronics, to point-of-care biomedical sensing modules. Recently, scientists have successfully pulled off significant advances in self-healing components including sensors, energy devices, transistors, and even integrated circuits. Lasers, one of the most important light sources, integrated with autonomous self-healability should be endowed with more functionalities and opportunities; however, the study of self-healing lasers is absent in all published reports. Here, the soft and self-healable random laser (SSRL) is presented. The SSRL can not only endure extreme external strain but also withstand several cutting/healing test cycles. Particularly, the damaged SSRL enables its functionality to be restored within just few minutes without the need of additional energy, chemical/electrical agents, or other healing stimuli, truly exhibiting a supple yet robust laser prototype. It is believed that SSRL can serve as a vital building block for next-generation laser technology as well as follow-on self-healing optoelectronics.

Heavy Mediator at Quantum Dot/Graphene Heterojunction for Efficient Charge Carrier Transfer: Alternative Approach for High-Performance Optoelectronic Devices.

Two-dimensional (2D) material nanocomposites have emerged as a material system for discovering new physical phenomena and developing novel devices. However, because of the low density of states of most two-dimensional materials such as graphene, the heterostructure of nanocomposites suffers from an enhanced depletion region, which can greatly reduce the efficiency of the charge carrier transfer and deteriorate the device performance. To circumvent this difficulty, here we propose an alternative approach by inserting a second 2D mediator with a heavy effective mass having a large density of states in-between the heterojunction of 2D nanocomposites. The mediator can effectively reduce the depletion region and form a type-II band alignment, which can speed up the dissociation of electron-hole pairs and enhance charge carrier transfer. To illustrate the principle, we demonstrate a novel stretchable photodetector based on the combination of graphene/ReS2/perovskite quantum dots. Two-dimensional ReS2 acts as a mediator in-between highly absorbing perovskite quantum dots and a high-mobility graphene channel and a thiol-based linker between the ReS2 and the perovskite. It is found that the optical sensitivity can be enhanced by 22 times. This enhancement was ascribed to the improvement of the charge transfer efficiency as evidenced by optical spectroscopy measurements. The produced photosensors are capable of reaching the highest reported value of photoresponsivity (>107 A W-1) and detectivity compared to previously studied stretchable devices. Mechanical robustness with tolerable strain up to 100% and excellent stability make our device ideal for future wearable electronics.

Sn-Doping Enhanced Ultrahigh Mobility In1-xSnxSe Phototransistor.

Two-dimensional ternary materials are attracting widespread interest because of the additional degree of freedom available to tailor the material property for a specific application. An In1-xSnxSe phototransistor possessing tunable ultrahigh mobility by Sn-doping engineering is demonstrated in this study. A striking feature of In1-xSnxSe flakes is the reduction in the oxide phase compared to undoped InSe, which is validated by spectroscopic analyses. Moreover, first-principles density functional calculations performed for the In1-xSnxSe crystal system reveal the same effective mass when doped with Sn atoms. Hence, because of an increased lifetime owing to the enhanced crystal quality, the carriers in In1-xSnxSe have higher mobility than in InSe. The internally boosted electrical properties of In1-xSnxSe exhibit ultrahigh mobility of 2560 ± 240 cm2 V-1 s-1 by suppressing the interfacial traps with substrate modification and channel encapsulation. As a phototransistor, the ultrathin In1-xSnxSe flakes are highly sensitive with a detectivity of 1014 Jones. It possesses a large photoresponsivity and photogain (Vg = 40 V) as high as 3 × 105 A W-1 and 0.5 × 106, respectively. The obtained results outperform all previously reported performances of InSe-based devices. Thus, the doping-engineered In1-xSnxSe-layered semiconductor finds a potential application in optoelectronics and meets the demand for faster electronic technology.

Ultra-high performance flexible piezopotential gated In1-xSnxSe phototransistor.

Flexible optoelectronic devices facilitated by the piezotronic effect have important applications in the near future in many different fields ranging from solid-state lighting to biomedicine. Two-dimensional materials possessing extraordinary mechanical strength and semiconducting properties are essential for realizing nanopiezotronics and piezo-phototronics. Here, we report the first demonstration of piezo-phototronic properties in In1-xSnxSe flexible devices by applying systematic mechanical strain under photoexcitation. Interestingly, we discover that the dark current and photocurrent are increased by five times under a bending strain of 2.7% with a maximum photoresponsivity of 1037 AW-1. In addition, the device can act as a strain sensor with a strain sensitivity up to 206. Based on these values, the device outperforms the same class of devices in two-dimensional materials. The underlying mechanism responsible for the discovered behavior can be interpreted in terms of piezoelectric potential gating, allowing the device to perform like a phototransistor. The strain-induced gate voltage assists in the efficient separation of photogenerated charge carriers and enhances the mobility of In1-xSnxSe, resulting in good performance on a freeform surface. Thus, our multifunctional device is useful for the development of a variety of advanced applications and will help meet the demand of emerging technologies.