Effect and mechanism analysis of surface hydrogenation and fluorination on the electronic properties of th-GeC2.

A two-dimensional (2D) tetrahex-GeC2 nanosheet demonstrates excellent electronic properties such as a finite direct band gap and high carrier mobilities, as predicted from theoretical calculations. To further expand its potential applications, various strategies can be employed to tailor its electronic properties. These strategies include alloying, strain application, and edge and surface functionalization. This work specifically focuses on the impact of surface functionalization with hydrogen and fluorine adsorption on the 2D tetrahex-GeC2 nanostructures. It was discovered that the electronic properties of these nanostructures undergo significant alterations through surface functionalization by adjusting the adsorption sites and coverage of H/F species. The underlying mechanisms responsible for these property changes have been thoroughly analyzed and discussed in detail. Our calculations, based on density functional theory, reveal that the band gap of tetrahex-GeC2 widens as the surface coverage of H atoms increases. Conversely, the band gap narrows in the case of F adsorption. Additionally, the indirect-direct band gap transition can be triggered through surface functionalization. Such modifications in the electronic band structure are primarily due to the disappearance of the π bond when the C atom is converted from sp2 to sp3 hybridization through the adsorption of surface functionalized species. Furthermore, the results indicate that surface adsorption can regulate the effective mass of carriers, electron affinity, and work function in the 2D tetrahex-GeC2 nanostructure.

Synthesis of Type II Ge and Ge-Si Alloyed Clathrates Using Solid-State Electrochemical Oxidation of Zintl Phase Precursors.

Germanium clathrates with the type II structure are open-framework materials that show promise for various applications, but the difficulty of achieving phase-pure products via traditional synthesis routes has hindered their development. Herein, we demonstrate the synthesis of type II Ge clathrates in a two-electrode electrochemical cell using Na4Ge4-ySiy (y = 0, 1) Zintl phase precursors as the working electrode, Na metal as the counter/reference electrode, and Na-ion conducting ß″-alumina as the solid electrolyte. The galvanostatic oxidation of Na4Ge4 resulted in voltage plateaus around 0.34-0.40 V vs Na/Na+ with the formation of different products depending on the reaction temperature. When using Na4Ge3Si as a precursor, nearly phase-pure, alloyed type II Ge-Si clathrate was obtained at 350 °C. The Na atoms in the large (Ge,Si)28 cages of the clathrate occupied off-centered positions according to Rietveld refinement and density functional theory calculations. The results indicate that electrochemical oxidation of Zintl phase precursors is a promising pathway for synthesizing Ge clathrates with type II structure and that Si alloying of the Zintl phase precursor can promote selective clathrate product formation over other phases.

Structural and Electrochemical Properties of Type VIII Ba8Ga16-δSn30+δ Clathrate (δ ≈ 1) during Lithiation.

Clathrates of the tetrel (Tt = Si, Ge, Sn) elements are host-guest structures that can undergo Li alloying reactions with high capacities. However, little is known about how the cage structure affects the phase transformations that take place during lithiation. To further this understanding, the structural changes of the type VIII clathrate Ba8Ga16-δSn30+δ (δ ≈ 1) during lithiation are investigated and compared to those in ß-Sn with ex situ X-ray total scattering measurements and pair distribution function (PDF) analysis. The results show that the type VIII clathrate undergoes an alloying reaction to form Li-rich amorphous phases (LixBa0.17Ga0.33Sn0.67, x = 2-3) with local structures similar to those in the crystalline binary Li-Sn phases that form during the lithiation of ß-Sn. As a result of the amorphous phase transition, the type VIII clathrate reacts at a lower voltage (0.25 V vs Li/Li+) compared to ß-Sn (0.45 V) and goes through a solid-solution reaction after the initial conversion of the crystalline clathrate phase. Cycling experiments suggest that the amorphous phase persists after the first lithiation and results in considerably better cycling than in ß-Sn. Density functional theory (DFT) calculations suggest that topotactic Li insertion into the clathrate lattice is not favorable due to the high energy of the Li sites, which is consistent with the experimentally observed amorphous phase transformation. The local structure in the clathrate featuring Ba atoms surrounded by a cage of Ga and Sn atoms is hypothesized to kinetically circumvent the formation of Li-Sn or Li-Ga crystalline phases, which results in better cycling and a lower reaction voltage. Based on the improved electrochemical performance, clathrates could act as tunable precursors to form amorphous Li alloying phases with novel electrochemical properties.

A new 2D auxetic CN2 nanostructure with high energy density and mechanical strength.

The existence of a new two dimensional CN2 structure was predicted using ab initio molecular dynamics (AIMD) and density-functional theory calculations. It consists of tetragonal and hexagonal rings with C-N and N-N bonds arranged in a buckling plane, isostructural to the tetrahex-carbon allotrope. It is thermodynamically and kinetically stable suggested by its phonon spectrum and AIMD. This nanosheet has a high concentration of N and contains N-N single bonds with an energy density of 6.3 kJ g-1, indicating its potential applications as a high energy density material. It possesses exotic mechanical properties with a negative Poisson's ratio and an anisotropic Young's modulus. The modulus in the zigzag direction is predicted to be 340 N m-1, stiffer than those of h-BN and penta-CN2 sheets and comparable to that of graphene. Its ideal strength of 28.8 N m-1 outperforms that of penta-graphene. The material maintains phonon stability upon the application of uniaxial strain up to 10% (13%) in the zigzag (armchair) direction or biaxial strain up to 5%. It possesses a wide indirect HSE band gap of 4.57 eV, which is tunable between 3.37-4.57 eV through strain. Double-layered structures are also explored. Such unique properties may facilitate its potential applications as a high energy density material and in nanomechanics and electronics.

Role of Alkali Metal in BiVO4 Crystal Structure for Enhancing Charge Separation and Diffusion Length for Photoelectrochemical Water Splitting.

Alkali metal (Na or K) doping in BiVO4 was examined systematically for enhancing bulk charge separation and transport in addition to improving charge transfer from the surface. The alkali metal-doped BiVO4 thin film photoanodes having nanostructured porous grain surface morphology exhibited better photocurrent density than pristine BiVO4. In particular, Na:BiVO4/Fe:Ni/Co-Pi photoanode showed a significantly improved photocurrent of 3.2 ± 0.15 mA·cm-2 in 0.1 M K2HPO4 electrolyte at 1.23 VRHE under 1 sun illumination. The depth-dependent Doppler broadening spectroscopy measurements confirmed the significant reduction in Bi- and V-based defect density with Na metal doping, and this led to a higher bulk diffusion length of charge pairs (four times that of the pristine one). Na doping led to reduced surface defects resulting in improved surface charge transfer based on cyclic voltammetry experiments. The density functional theory calculations confirmed the improved performance in Na-doped BiVO4 photoanodes achieved through interband formation and reduction in the band gap.

Quantum confinement and edge effects on electronic properties of zigzag green phosphorene nanoribbons.

First-principles density-functional theory calculations were performed to investigate quantum confinement and edge effects on electronic properties of zigzag green phosphorene nanoribbons (ZGPNRs) with edge chemical species including H, OH, F, Cl, O, and S for the ribbons width in the range of 0.5-3.7 nm. The ZGPNRs were obtained from relaxed two-dimensional green phosphorene monolayer with different cutting strategies and the most energetically favorable ribbon configuration was selected for further exploration of size and edge effects. It was found that the electronic properties of the ZGPNRs are strongly associated with the ribbon width and edge chemical species. They show either semiconducting or metallic features depending on the edge functionalization species. The ZGPNRs show semiconducting behavior with the edge species of H, OH, F, or Cl (Group I), while they exhibit metallic characteristics with pristine or O, S edges (Group II). The conduction band minimum and valence band maximum of the ZGPNRs with the Group I edge are primarily located at the inner P atoms and the edge P and functionalization atoms have little contribution. However, for the Group II edge, the electronic bands crossing the Fermi level are dominantly contributed by the edge atoms. It was also found that the band gap and work function of the ZGPNRs are sensitively tunable by varying ribbon width and edge functionalization species.

Six new silicon phases with direct band gaps.

Six new silicon phases with direct band gaps were found through silicon atomic substitution of carbon in the known carbon structures via high-throughput calculations. The six newly discovered Si phases are in the space groups of Im3[combining macron]m, C2/c, I4/mcm, I4/mmm, P21/m, and P4/mbm, respectively. Their crystal structures, stabilities, mechanical properties, elastic anisotropy, and electronic and optical properties were systematically studied using first-principles density functional theory calculations. All the new phases were proved to be thermodynamically and mechanically stable at ambient pressure. The direct band gap values in the range of 0.658-1.470 eV and the excellent optoelectronic properties of these six Si allotropes suggest that they are promising photovoltaic materials compared to diamond silicon.

Experimental and Computational Study of the Lithiation of Ba8Al yGe46- y Based Type I Germanium Clathrates.

In this work, we investigate the electrochemical properties of Ba8Al yGe46- y ( y = 0, 4, 8, 12, 16) clathrates prepared by arc-melting. These materials have cage-like structures with large cavity volumes and can also have vacancies on the Ge framework sites, features which may be used to accommodate Li. Herein, a structural, electrochemical, and theoretical investigation is performed to explore these materials as anodes in Li-ion batteries, including analysis of the effect of the Al content and framework vacancies on the observed electrochemical properties. Single-crystal X-ray diffraction (XRD) studies indicate the presence of vacancies at the 6c site of the clathrate framework as the Al content decreases, and the lithiation potentials and capacities are observed to decrease as the degree of Al substitution increases. From XRD, electrochemical, and transmission electron microscopy analysis, we find that all of the clathrate compositions undergo two-phase reactions to form Li-rich amorphous phases. This is different from the behavior observed in Si clathrate analogues, where there is no amorphous phase transition during electrochemical lithiation nor discernible changes to the lattice constant of the bulk structure. From density functional theory calculations, we find that Li insertion into the three framework vacancies in Ba8Ge43 is energetically favorable, with a calculated lithiation voltage of 0.77 V versus Li/Li+. However, the calculated energy barrier for Li diffusion between vacancies and around Ba guest atoms is at least 1.6 eV, which is too high for significant room-temperature diffusion. These results show that framework vacancies in the Ge clathrate structure are unlikely to significantly contribute to lithiation processes unless the Ba guest atoms are absent, but suggest that guest atom vacancies could open diffusion paths for Li, allowing for empty framework positions to be occupied.

The Phase Evolution and Physical Properties of Binary Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering.

P-type binary copper oxide semiconductor films for various O2 flow rates and total pressures (Pt) were prepared using the reactive magnetron sputtering method. Their morphologies and structures were detected by X-ray diffraction, Raman spectrometry, and SEM. A phase diagram with Cu2O, Cu4O3, CuO, and their mixture was established. Moreover, based on Kelvin Probe Force Microscopy (KPFM) and conductive AFM (C-AFM), by measuring the contact potential difference (VCPD) and the field emission property, the work function and the carrier concentration were obtained, which can be used to distinguish the different types of copper oxide states. The band gaps of the Cu2O, Cu4O3, and CuO thin films were observed to be (2.51 ± 0.02) eV, (1.65 ± 0.1) eV, and (1.42 ± 0.01) eV, respectively. The resistivities of Cu2O, Cu4O3, and CuO thin films are (3.7 ± 0.3) × 10³ Ω·cm, (1.1 ± 0.3) × 10³ Ω·cm, and (1.6 ± 6) × 10¹ Ω·cm, respectively. All the measured results above are consistent.

Structural and photoelectrochemical evaluation of nanotextured Sn-doped AgInS(2) films prepared by spray pyrolysis.

Spray pyrolysis was used to prepare films of AgInS(2) (AIS) with and without Sn as an extrinsic dopant. The photoelectrochemical performance of these films was evaluated after annealing under a N(2) or S atmosphere with different amounts of the Sn dopant. DFT was used to calculate the band structure of AIS and understand the role of Sn doping in the observed properties. All AIS films were n-type, and Sn was found to increase the photocurrent and carrier concentration of AIS with an optimum doping level of x=[Sn]/([Ag]+[In])=0.02, which gave a photocurrent of 4.85 mA cm(-2). Above this level, the Sn dopants were detrimental to the photoelectrochemical performance, likely a result of a self-compensating effect and the introduction of a deep acceptor level, which could act as a recombination site for photogenerated carriers.

Engineering the work function of armchair graphene nanoribbons using strain and functional species: a first principles study.

First principles density functional theory calculations were performed to study the effects of strain, edge passivation, and surface functional species on the structural and electronic properties of armchair graphene nanoribbons (AGNRs), with a particular focus on the work function. The work function was found to increase with uniaxial tensile strain and decrease with compression. The variation of the work function under strain is primarily due to the shift of the Fermi energy with strain. In addition, the relationship between the work function variation and the core level shift with strain is discussed. Distinct trends of the core level shift under tensile and compressive strain were discovered. For AGNRs with the edge carbon atoms passivated by oxygen, the work function is higher than for nanoribbons with the edge passivated by hydrogen under a moderate strain. The difference between the work functions in these two edge passivations is enlarged (reduced) under a sufficient tensile (compressive) strain. This has been correlated to a direct-indirect bandgap transition for tensile strains of about 4% and to a structural transformation for large compressive strains at about - 12%. Furthermore, the effect of the surface species decoration, such as H, F, or OH with different covering density, was investigated. It was found that the work function varies with the type and coverage of surface functional species. Decoration with F and OH increases the work function while H decreases it. The surface functional species were decorated on either one side or both sides of AGNRs. The difference in the work functions between one-sided and two-sided decorations was found to be relatively small, which may suggest an introduced surface dipole plays a minor role.

Band structure of Si/Ge core-shell nanowires along the [110] direction modulated by external uniaxial strain.

Strain modulated electronic properties of Si/Ge core-shell nanowires along the [110] direction were reported, on the basis of first principles density-functional theory calculations. In particular, the energy dispersion relationship of the conduction/valence band was explored in detail. At the Γ point, the energy levels of both bands are significantly altered by applied uniaxial strain, which results in an evident change of the band gap. In contrast, for the K vectors far away from Γ, the variation of the conduction/valence band with strain is much reduced. In addition, with a sufficient tensile strain (∼1%), the valence band edge shifts away from Γ, which indicates that the band gap of the Si/Ge core-shell nanowires experiences a transition from direct to indirect. Our studies further showed that effective masses of charge carriers can also be tuned using the external uniaxial strain. The effective mass of the hole increases dramatically with tensile strain, while strain shows a minimal effect on tuning the effective mass of the electron. Finally, the relation between strain and the conduction/valence band edge is discussed thoroughly in terms of site-projected wavefunction characters.

Multiscale modeling of the surfactant mediated synthesis and supramolecular assembly of cobalt nanodots.

Multiscale simulations are used to bridge the surfactant templated assembly of individual approximately 1-10 nm cobalt dots, to their ordering into supramolecular arrays. Potential energy surfaces derived from ab initio calculations are input to lattice Monte Carlo simulations at atomic scales. By this process we quantitatively reproduce the experimental cobalt nanoparticle sizes. Crucially, we find that there is an effective short range attraction between pairs of nanodots. Mesoscale simulations show that these attractive interdot potentials are so short ranged that the dots can assemble only into orientally ordered hexatic phases as in the experiments.