Reduction of spectral interferences using ultraclean gold nanowire arrays in the LDI-MS analysis of a model peptide.

The surface chemistry of gold nanowires (AuNWs) has been systematically assessed in terms of contamination and cleaning processes. The nanomaterial's surface quality was correlated to its performance in the matrix-free laser desorption ionization mass spectrometry (LDI-MS) analysis of low molecular weight analytes. Arrays of AuNWs were deposited on glass slides by means of the lithographically patterned nanowire electrodeposition technique. AuNWs were then characterized in terms of surface chemical composition and morphology using X-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy. AuNWs were subjected to a series of well-known cleaning procedures with the aim of producing the best performing surfaces for the LDI-MS detection of leucine enkephalin, chosen as a model analyte with a molar mass below 1,000 g/mol. Prolonged cyclic voltammetry in 2 M sulfuric acid and, most of all, oxygen plasma cleaning for 5 min provided the best results in terms of simpler (interference-free) and more intense mass spectrometry spectra of the reference compound. The analyte always ionized as the sodiated adduct, and leucine enkephalin limits of detection of 0.5 and 2.5 pmol were estimated for the positive and negative analysis modes, respectively. This study points out the tight correlation existing between the chemical status of the nanostructure surface and the AuNW-assisted LDI-MS performance in terms of reproducibility of spectra, intensity of analyte ions and reduction of interferences.

Synthesis of PbTe nanowire arrays using lithographically patterned nanowire electrodeposition.

We describe the preparation by electrodeposition of arrays of lead telluride (PbTe) nanowires using the lithographically patterned nanowire electrodeposition (LPNE) method. PbTe nanowires had a rectangular cross-section with adjustable width and height ranging between 60-400 nm (w) and 20-100 nm (h). The characterization of these nanowire arrays using X-ray diffraction, transmission electron microscopy and electron diffraction, scanning electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy (XPS) is reported. PbTe nanowires were electrodeposited using a cyclic electrodeposition-stripping technique that produced polycrystalline, stoichiometric, face-centered cubic PbTe with a mean grain diameter of 10-20 nm. These nanowires were more than 1 mm in length and two additional processing steps permitted their suspension across 25 microm air gaps microfabricated on these surfaces. The LPNE synthesis of lithographically patterned PbTe nanowires was carried out in unfiltered laboratory air. Nanowires with lengths of 70-100 microm showed an electrical resistivity comparable to bulk PbTe. XPS reveals that exposure of PbTe nanowires to air causes the formation on the nanowire surface of approximately one monolayer of a mixed lead oxide and tellurium oxide within a few minutes.

Electrodeposited submicron thermocouples with microsecond response times.

We describe a procedure for preparing submicron scale silver-nickel thermocouples (TCs) using electrochemical step edge decoration on graphite surfaces. Each fabrication operation produced ensembles of 2-20 TCs with diameters in the 1.0 microm to 500 nm range. These "sub-mum TCs" (SMTCs) produced linear voltage versus temperature output over the range from 20 to 100 degrees C characterized by a Seebeck coefficient of 20 +/- 1 microV/degrees C, equal to the 21 microV/degrees C that is theoretically expected for a junction between these two metals. The time response of SMTCs was evaluated using two different laser-heating methods and compared with the smallest mechanically robust commercially available type J TCs. Electrochemical etching of the silver wire introduced constrictions at grain boundaries that reduced the thermal mass of the junction without altering its integrity or its overall diameter, producing a decrease of the measured rise time for SMTCs up to 96%.

Physical vapor deposition of one-dimensional nanoparticle arrays on graphite: seeding the electrodeposition of gold nanowires.

One-dimensional (1D) ensembles of 2-15 nm diameter gold nanoparticles were prepared using physical vapor deposition (PVD) on highly oriented pyrolytic graphite (HOPG) basal plane surfaces. These 1D Au nanoparticle ensembles (NPEs) were prepared by depositing gold (0.2-0.6 nm/s) at an equivalent thickness of 3-4 nm onto HOPG surfaces at 670-690 K. Under these conditions, vapor-deposited gold nucleated selectively at the linear step edge defects present on these HOPG surfaces with virtually no nucleation of gold particles on terraces. The number density of 2-15 nm diameter gold particles at step edges was 30-40 microm-1. These 1D NPEs were up to a millimeter in length and organized into parallel arrays on the HOPG surface, following the organization of step edges. Surprisingly, the deposition of more gold by PVD did not lead to the formation of continuous gold nanowires at step edges under the range of sample temperature or deposition flux we have investigated. Instead, these 1D Au NPEs were used as nucleation templates for the preparation by electrodeposition of gold nanowires. The electrodeposition of gold occurred selectively on PVD gold nanoparticles over the potential range from 700-640 mV vs SCE, and after optimization of the electrodeposition parameters continuous gold nanowires as small as 80-90 nm in diameter and several micrometers in length were obtained.

Bismuth telluride (Bi2Te3) nanowires: synthesis by cyclic electrodeposition/stripping, thinning by electrooxidation, and electrical power generation.

Nanowires composed of the thermoelectric material Bi2Te3 were synthesized on highly oriented pyrolytic graphite (HOPG) electrodes using the electrochemical step edge decoration (ESED) method. Nanowire synthesis was initiated by applying a voltage pulse of -0.75 V versus SCE for 5 ms to an HOPG electrode in an aqueous solution containing both Bi3+ and TeO22-, thereby producing nuclei at the step edges. Bi2Te3 was electrodeposited onto these nuclei using a cyclic electrodeposition-stripping scheme that involved the electrodeposition of bismuth-rich Bi2Te3 on a negative-going voltammetric scan (to -0.05 V) and the subsequent anodic stripping of excess bismuth from these nanowires during a positive-going scan (to +0.35 V). When this cycle was repeated 10-50 times, Bi2Te3 nanowires in the 100-300-nm-diameter range were obtained. These nanowires were narrowly dispersed in diameter (RSDdia = 10-20%), were more than 100 microm in length, and were organized into parallel arrays containing hundreds of wires. Smaller nanowires, with diameters down to 30 nm, were obtained by electrooxidizing 150-nm-diameter Bi2Te3 nanowires at +0.37 V under conditions of kinetic control. This oxidation process unexpectedly improved the uniformity of Bi2Te3 nanowires, and X-ray photoelectron spectroscopy (XPS) shows that these nanowires retain a Bi2Te3 core but also have a thin surface layer composed of Bi and Te oxides. The ability of Bi2Te3 nanowires to generate electrical power was assessed by transferring ensembles of these nanowires onto cyanoacrylate-coated glass surfaces and evaporating 4-point nickel contacts. A dimensionless figure of merit, ZT, ranging from 0 to 0.85 was measured for fresh samples that were less than 1 day old. XPS reveals that Bi2Te3 nanowires are oxidized within a week to Bi2O3 and TeO2. These oxides may interfere with the application by evaporation of electrical contacts to these nanowires.

Lithographically patterned nanowire electrodeposition.

Nanowire fabrication methods can be classified either as 'top down', involving photo- or electron-beam lithography, or 'bottom up', involving the synthesis of nanowires from molecular precursors. Lithographically patterned nanowire electrodeposition (LPNE) combines attributes of photolithography with the versatility of bottom-up electrochemical synthesis. Photolithography defines the position of a sacrificial nickel nanoband electrode, which is recessed into a horizontal trench. This trench acts as a 'nanoform' to define the thickness of an incipient nanowire during its electrodeposition. The electrodeposition duration determines the width of the nanowire. Removal of the photoresist and nickel exposes a polycrystalline nanowire--composed of gold, platinum or palladium--characterized by thickness and width that can be independently controlled down to 18 and 40 nm, respectively. Metal nanowires prepared by LPNE may have applications in chemical sensing and optical signal processing, and as interconnects in nanoelectronic devices.

Shrinking nanowires by kinetically controlled electrooxidation.

Nanowires composed of antimony, gold, and bismuth telluride (Bi2Te3) were reduced in diameter by electrooxidation in aqueous solutions. When electrooxidation was carried out using low current densities (Jox < 150 microA cm(-2)), the mean wire diameter decreased in direct proportion to the oxidation time, as expected for a kinetically controlled process. Under these conditions, the diameter uniformity of nanowires remained constant as wires were shrunk from initial diameters of more than 120 nm to less than 40 nm, for Sb and Bi2Te3, and less than 60 nm for Au. Oxidized nanowires remained continuous for more than 100 microm. Electrooxidation at higher current densities rapidly introduced breaks into these nanowires. Electrochemical wire growth and shrinking by electrooxidation were integrated into a single electrochemical experiment that allowed the final mean diameter of nanowires to be specified with a precision of 5-10 nm.

Shape- and size-selective electrochemical synthesis of dispersed silver(I) oxide colloids.

Silver(I) oxide (Ag2O) micro- and nanoparticles were electrochemically synthesized by anodizing a sacrificial silver wire in a basic aqueous sulfate solution. Ag2O particles were released from the silver electrode surface during synthesis producing a visible sol "stream". The composition of these particles was established using selected area electron diffraction, X-ray diffraction, and X-ray photoelectron spectroscopy. The shape of Ag2O crystallites could be adjusted using the potential of the silver wire generator electrode. The generation of a dispersed Ag2O sol and the observed shape selectivity are both explained by a two-step mechanism involving the anodic dissolution of silver metal, Ag0 --> Ag+(aq) + 1e-, followed by the precipitation of Ag2O particles, 2Ag+ + 2OH- --> Ag2O(s) + H2O. Within 100 mV of the voltage threshold for particle growth, cubic particles with a depression in each face ("hopper crystals") were produced. The application of more positive voltages resulted in the generation of 8-fold symmetric "flower"-shaped particles formed as a consequence of fast growth in the <111> crystallographic direction. The diameter of flower particles was adjustable from 250 nm to 1.8 microm using the growth duration at constant potential.

Reversible resistance modulation in mesoscopic silver wires induced by exposure to amine vapor.

Ensembles of silver nanowires (AgNEs) with diameters ranging from 200 nm to 1.0 microm have been prepared by electrochemical step edge decoration. These AgNEs showed a rapid (< 5 s), reversible increase in resistance upon exposure to the vapor of ammonia, trimethylamine, and pyridine. The amplitude of the resistance change was up to +3000% (DeltaR/Ro)-more than 2 orders of magnitude larger than can be explained based on boundary layer scattering effects. We experimentally probe the mechanism for this resistance modulation in the case of ammonia, and we propose a model to describe it. Conductive tip atomic force microscopy was used to probe individual sections of nanowires in AgNEs; these data revealed that the resistance change caused by NH(3) exposure was concentrated within a minority (approximately 10%) of the 5-microm wire segments that were probed--not uniformly distributed along each nanowire. All AgNEs showed a temperature dependence of their resistance, alpha, that was smaller than expected for silver metal. Highly sensitive AgNEs sometimes showed a negative alpha, characteristic of semiconductors, but negative alpha values were never observed for AgNEs with a low sensitivity to NH3. AgNEs did not respond to hydrocarbons, O2, H2O, N2, CO, or Ar, but a large (DeltaR/Ro > |-50%|) irreversible decrease in resistance was seen upon exposures to acids including HCl, HNO3, and H2SO4. Based on these and other data, we propose a model in which oxidized constrictions in silver nanowires limit the conductivity of the wire and provide a means for "gating" conduction based on the protonation state of the oxide surface.

Molybdenum disulfide nanowires and nanoribbons by electrochemical/chemical synthesis.

Molybdenum disulfide nanowires and nanoribbons have been synthesized by a two-step, electrochemical/chemical synthetic method. In the first step, MoO(x) wires (a mixture of MoO(2) and MoO(3)) were electrodeposited size-selectively by electrochemical step-edge decoration on a highly oriented pyrolytic graphite (HOPG) surface. Then, MoO(x) precursor wires were converted to MoS(2) by exposure to H(2)S either at 500-700 degrees C, producing "low-temperature" or LT MoS(2) nanowires that were predominantly 2H phase, or above 800 degrees C producing "high-temperature" or HT MoS(2) ribbons that were predominantly 3R phase. The majority of these MoS(2) wires and ribbons were more than 50 microm in length and were organized into parallel arrays containing hundreds of wires or ribbons. MoS(2) nanostructures were characterized by X-ray photoelectron spectroscopy, scanning and transmission electron microscopy, selected area electron diffraction, X-ray diffraction, UV-visible absorption spectrometry, and Raman spectroscopy. HT and LT MoS(2) nanowires were structurally distinct: LT MoS(2) wires were hemicylindrical in shape and nearly identical in diameter to the MoO(x) precursor wires from which they were derived. LT MoS(2) wires were polycrystalline, and the internal structure consisted of many interwoven, multilayer strands of MoS(2); HT MoS(2) ribbons were 50-800 nm in width and 3-100 nm thick, composed of planar crystallites of 3R-MoS(2). These layers grew in van der Waals contact with the HOPG surface so that the c-axis of the 3R-MoS(2) unit cell was oriented perpendicular to the plane of the graphite surface. Arrays of MoS(2) wires and ribbons could be cleanly separated from the HOPG surface and transferred to glass for electrical and optical characterization. Optical absorption measurements of HT MoS(2) nanoribbons reveal a direct gap near 1.95 eV and two exciton peaks, A1 and B1, characteristic of 3R-MoS(2). These exciton peaks shifted to higher energy by up to 80 meV as the wire thickness was decreased to 7 nm (eleven MoS(2) layers). The energy shifts were proportional to 1/ L( parallel)(2), and the effective masses were calculated. Current versus voltage curves for both LT and HT MoS(2) nanostructures were probed as a function of temperature from -33 degrees C to 47 degrees C. Conduction was ohmic and mainly governed by the grain boundaries residing along the wires. The thermal activation barrier was found to be related to the degree of order of the crystallites and can be tuned from 126 meV for LT nanowires to 26 meV for HT nanoribbons.

Multimode detection of hydrogen gas using palladium-covered silicon micro-channels.

Palladium was electrodeposited onto lithographically patterned Si(100) "micro-channels" with dimensions of 2 microm (width) x 100 microm (length). The properties of these Pd-covered Si micro-channels for detecting dihydrogen gas were then evaluated. Pd electrodeposition was carried out under conditions favoring an instantaneous nucleation and growth mechanism. This strategy produced size-similar Pd particles at a coverage of (4-6) x 10(9) cm(-2) within the confines of the Si micro-channel. When the mean particle radius, ro, was smaller than a critical value (ro < rc = 70-85 nm), each Pd particle was well separated on the surface from adjacent particles, on average, and no response to H2 gas attributable to the micro-channel was observed. As Pd particles were grown larger, to a mean radius of ro approximately equal to rc, adjacent particles on the surface touched and the electrical resistance of the micro-channel dropped by several orders of magnitude. These "type 2" H2 sensors exhibited a rapid (< 1 s), reversible decrease in their resistance in response to exposure to H2 above 0.5%, but a minimum resistance was observed at 1-2%, and a resistance increase was seen at higher H2 concentration. This complex behavior resulted from the existence of three mechanisms for charge transport across the micro-channel. If still larger quantities of Pd were deposited, the Pd particle ensemble coalesced into an electrically continuous film. These "type 3" sensors became more resistive in the presence of H2, not more conductive as seen for sensors of types 1 and 2, but the amplitude of this response was smaller than seen for type 2 sensors.

Palladium mesowire arrays for fast hydrogen sensors and hydrogen-actuated switches.

Arrays of mesoscopic palladium wires prepared by electrodeposition form the basis for hydrogen sensors and hydrogen-actuated switches that exhibit a response time ranging from 20 ms to 5 s, depending on the hydrogen concentration. These devices were constructed by electrodepositing palladium mesowires on a highly oriented pyrolytic graphite surface and then transferring these mesowires to a cyanoacrylate film supported on a glass slide. The application of silver contacts to the ends of 10-100 mesowires, arrayed electrically in parallel, produced sensors and switches that exhibited a high conductivity state in the presence of hydrogen and a low conductivity state in the absence of hydrogen. After an initial exposure to hydrogen, 15-50 nanoscopic gaps are formed in each mesowire. These nanoscopic gaps or "break junctions" close in the presence of hydrogen gas and reopen in its absence as hydrogen is reversibly occluded by the palladium grains in each wire, and the palladium lattice expands and contracts by several percent. The change in resistance for sensors and switches was related to the hydrogen concentration over a range from 1 to 10%.

Hydrogen sensors and switches from electrodeposited palladium mesowire arrays.

Hydrogen sensors and hydrogen-activated switches were fabricated from arrays of mesoscopic palladium wires. These palladium "mesowire" arrays were prepared by electrodeposition onto graphite surfaces and were transferred onto a cyanoacrylate film. Exposure to hydrogen gas caused a rapid (less than 75 milliseconds) reversible decrease in the resistance of the array that correlated with the hydrogen concentration over a range from 2 to 10%. The sensor response appears to involve the closing of nanoscopic gaps or "break junctions" in wires caused by the dilation of palladium grains undergoing hydrogen absorption. Wire arrays in which all wires possessed nanoscopic gaps reverted to open circuits in the absence of hydrogen gas.

Phase separation in AlxGa1-xAs nanowhiskers grown by the solution-liquid-solid mechanism.

Low-temperature growth of AlxGa1-xAs by the solution-liquid-solid mechanism affords nanowhiskers having two specific overall compositions: x = 0.1 and 0.8. Intermediate compositions (0.1 < x < 0.8) are inaccessible by the method employed. Examination of the nanowhiskers by transmission electron microscopy, photoluminescence spectroscopy, electron energy loss spectroscopy, and annealing studies indicates that they possess compositionally modulated nanostructures. The observed compositional modulation consists of alternating comparatively Al-rich and Ga-rich AlxGa1-xAs domains with dimensions of 3-20 nm. The spontaneous phase separation, which occurs during growth, appears to be kinetically driven, and the resulting phase-separated nanostructures appear to be, therefore, metastable rather than stable. Spontaneous phase separation in AlxGa1-xAs, which strongly influences its photoemission behavior, is not well understood theoretically.

Hybrid electrochemical/chemical synthesis of quantum dots.

The "electrochemical/chemical method" (or "E/C method") is a new wet chemical method for synthesizing semiconductor quantum dots on graphite surfaces. The E/C synthesis of quantum dots composed of the generic semiconducting salt, MX, typically involves three steps: (1) electrochemical deposition of nanoparticles of the metal, M degrees, from a solution of metal ions, M(n)(+); (2) electrochemical oxidation of these metal particles to MO(n)()(/2), and; (3) displacement of the oxygen from MO(n)()(/2) using HX (for example) to yield nanoparticles of MX. This conversion from metal to metal oxide to metal salt occurs on a particle-by-particle basis; that is, each metal nanoparticle is converted into a semiconductor nanoparticle. E/C-synthesized beta-CuI and CdS quantum dots possess many of the attributes of quantum dots synthesized using molecular beam epitaxy, including epitaxial orientation on the graphite surface, a narrow size dispersion, and strong, particle size-tunable photoluminescence. However, the E/C method is faster, cheaper, and applicable to a greater number of materials.

Molybdenum nanowires by electrodeposition.

Metallic molybdenum (Mo(o)) wires with diameters ranging from 15 nanometers to 1.0 micrometers and lengths of up to 500 micrometers (0.5 millimeters) were prepared in a two-step procedure. Molybdenum oxide wires were electrodeposited selectively at step edges and then reduced in hydrogen gas at 500 degrees C to yield Mo(o). The hemicylindrical wires prepared by this technique were self-uniform, and the wires prepared in a particular electrodeposition (in batches of 10(5) to 10(7)) were narrowly distributed in diameter. Wires were obtained size selectively because the mean wire diameter was directly proportional to the square root of the electrolysis time. The metal nanowires could be embedded in a polystyrene film and lifted off the graphite electrode surface. The conductivity and mechanical resiliency of individual embedded wires were similar to those of bulk molybdenum.

Tyr-503 of beta-galactosidase (Escherichia coli) plays an important role in degalactosylation.

Substitutions for Tyr-503 of beta-galactosidase caused large decreases of the activity. Both the galactosylation (k2) and degalactosylation (k3) rates were decreased. Substitutions by residues without transferable protons, caused k3 to decrease much more than k2 while substitutions with residues having transferable protons, caused approximately equal decreases of k2 and k3. Several lines of evidence showed this. The Km values of the substituted enzymes were much smaller than those for the wild type if the substituted amino acid residues did not have transferable protons; this was not the case when the substituted residues had transferable protons. Inhibition studies showed that the Km values were not small because of small Ks values but were small because of relatively small k3 values (compared with the k2 values). The conclusion that the k3 values are small relative to k2 upon substitution with residues without transferable protons is also based upon other studies: studies indicating that the reaction rates were similar with different substrates, studies in the presence of alcohol acceptors, studies showing that the rate of inactivation by 2,4-dinitrophenyl-2-deoxy-2-F-beta-D-galactopyranoside decreased much less than the rate of reactivation; studies on burst kinetics, and pH studies. The data suggest that Tyr-503 may be important for the degalactosylation reaction because of its ability to transfer protons and thereby facilitate cleavage of the transient covalent bond between galactose and Glu-537.

Implementation of Electrochemically Synthesized Silver Nanocrystallites for the Preferential SERS Enhancement of Defect Modes on Thermally Etched Graphite Surfaces.

Highly oriented pyrolytic graphite (HOPG) surfaces, on which atomically well-defined roughness has been introduced via high-temperature gasification reactions, are investigated by noncontact mode atomic force microscopy (NC-AFM) and Raman spectroscopy both before and after the electrochemical deposition of silver nanocrystallites on these surfaces. Exposure of freshly cleaved HOPG surfaces to an O(2)-rich ambient at 650 °C for a few minutes caused the formation of 1-monolayer-deep, circular etch pits on the HOPG basal plane surface. Silver nanocrystallites were electrochemically deposited onto these etched surfaces at two coverages: 0.5 mC cm(-)(2) (or 5 nmol of Ag(0) cm(-)(2)) and 2.4 mC cm(-)(2) (25 nmol of Ag(0) cm(-)(2)). At the lower coverage, NC-AFM images revealed that silver decorated only the circumference of the circular etch pits, forming a uniform annular ring with an apparent diameter of 200-250 Å and a height of ∼15 Å. At the higher silver coverage, an increase in the height but not the diameter of this annulus was observed, and additional silver nanostructures [Formula: see text] having dimensions of 300-350 Å diameter and 15 Å height [Formula: see text] were observed on atomically smooth regions of the graphite basal plane. The Raman spectroscopy of these surfaces was investigated and compared with spectra for nanocrystallite-modified but unetched HOPG basal plane surfaces and thermally etched surfaces on which no silver was deposited. For for thermally etched HOPG surfaces at either silver coverage, SERS-augmented Raman spectra were obtained in which defect modes of the graphite surface [Formula: see text] derived from "finite" graphite domains at the surface [Formula: see text] were strongly and preferentially enhanced. In addition, an enhanced band near 2900 cm(-)(1) was assigned to ν(OH) from carboxylate moieties present at step edges based on the basis of the observed pH dependence of the enhancement.

Fabrication and use of nanometer-sized electrodes in electrochemistry.

Electrodes with electrochemical dimensions as small as 10 angstroms have been fabricated and used for electrochemical studies. These nanometer-scale electrodes have enabled the measurement of electron-transfer rate constants, k(het), that are two orders of magnitude faster than k(het) values accessible with any other electrochemical method.