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1.
J Microsc ; 280(3): 183-193, 2020 Dec.
Article in English | MEDLINE | ID: mdl-32424808

ABSTRACT

Nanoscale structures were produced on silicon surfaces by low-energy oxygen ion irradiation: periodic rippled or terraced patterns formed spontaneously, depending on the chosen combination of beam incidence angle and ion fluence. Atomic force microscopy image processing and analysis accurately described the obtained nanotopographies. Graphene monolayers grown by chemical vapour deposition were transferred onto the nanostructured silicon surfaces. The interfacial interaction between the textured surface and the deposited graphene governs the conformation of the thin carbon layer; the resulting different degree of regularity and conformality of the substrate-induced graphene corrugations was studied and it was related to the distinctive topographical features of the silicon nanostructures. Raman spectroscopy revealed specific features of the strain caused by the alternating suspension and contact with the underlying nanostructures and the consequent modulation of the silicon-graphene interaction. Lay Description In the field of nanosciences, nanotechnologies and advanced materials, it is pivotal to produce and integrate nanostructures in a controlled, cost-effective and possibly high-throughput manner. Currently, the surface nanopatterning by ion beam irradiation (IBI) is showing its potential in overcoming some of the limits that characterize the conventional lithographic techniques. IBI can produce self-organized and regular patterns of nanostructures, such as ripples, dots, and holes, having heights and lateral periodicities in a pre-defined range. The nanopatterns can develop over large surface areas of a broad class of materials and have been tested for different applications, e.g. microelectronic device fabrication, catalysis, nanoscale magnetism, surface-enhanced Raman scattering. Also, the ion-induced patterns allowed the control of physical properties such as wettability, reflectance, and photoluminescence. As a whole, this is a highly dynamic and continuously evolving field. Graphene was first obtained from bulk graphite by mechanical exfoliation; remarkable mechanical, thermal and optical properties came to light; they make graphene an ideal material for sensing. Also, the research on graphene paves the way for basic and applied studies on other ultrathin thickness materials, such as monolayer transition metal dichalcogenide or monolayer metal oxide, which also show peculiar properties as compared to their bulk version. Since graphene is a zero-gap semi-metal, a finite energy gap must be open to engineer graphene-based electronic devices. At this aim, researchers can take advantage of the mechanical properties of graphene, since its out-of-plane deformation can favourably modify its electronic structure. While the spontaneous, random self-folding of graphene to form wrinkles has thermodynamics reasons and is unavoidable above a certain material length, the interactions between graphene and substrates can generate, in principle, designed wrinkled structures. Therefore, a field of study has emerged, focused on the control and tuning of the geometry of graphene corrugations and their influence on specific physical and chemical properties. To the best of our knowledge, this work studies for the first time the geometry and strain in graphene wrinkles induced by silicon substrates that were suitably nanopatterned by ion beam irradiation.

2.
Spectrochim Acta Part B At Spectrosc ; 99(100): 121-128, 2014 Sep 01.
Article in English | MEDLINE | ID: mdl-25202165

ABSTRACT

The continuous downscaling of the process size for semiconductor devices pushes the junction depths and consequentially the implantation depths to the top few nanometers of the Si substrate. This motivates the need for sensitive methods capable of analyzing dopant distribution, total dose and possible impurities. X-ray techniques utilizing the external reflection of X-rays are very surface sensitive, hence providing a non-destructive tool for process analysis and control. X-ray reflectometry (XRR) is an established technique for the characterization of single- and multi-layered thin film structures with layer thicknesses in the nanometer range. XRR spectra are acquired by varying the incident angle in the grazing incidence regime while measuring the specular reflected X-ray beam. The shape of the resulting angle-dependent curve is correlated to changes of the electron density in the sample, but does not provide direct information on the presence or distribution of chemical elements in the sample. Grazing Incidence XRF (GIXRF) measures the X-ray fluorescence induced by an X-ray beam incident under grazing angles. The resulting angle dependent intensity curves are correlated to the depth distribution and mass density of the elements in the sample. GIXRF provides information on contaminations, total implanted dose and to some extent on the depth of the dopant distribution, but is ambiguous with regard to the exact distribution function. Both techniques use similar measurement procedures and data evaluation strategies, i.e. optimization of a sample model by fitting measured and calculated angle curves. Moreover, the applied sample models can be derived from the same physical properties, like atomic scattering/form factors and elemental concentrations; a simultaneous analysis is therefore a straightforward approach. This combined analysis in turn reduces the uncertainties of the individual techniques, allowing a determination of dose and depth profile of the implanted elements with drastically increased confidence level. Silicon wafers implanted with Arsenic at different implantation energies were measured by XRR and GIXRF using a combined, simultaneous measurement and data evaluation procedure. The data were processed using a self-developed software package (JGIXA), designed for simultaneous fitting of GIXRF and XRR data. The results were compared with depth profiles obtained by Secondary Ion Mass Spectrometry (SIMS).

3.
Osteoarthritis Cartilage ; 14(9): 906-13, 2006 Sep.
Article in English | MEDLINE | ID: mdl-16678451

ABSTRACT

OBJECTIVE: Determination of the spatial distribution of the toxic element lead (Pb) and other trace elements in normal articular cartilage and subchondral bone from adult humans with no history of work-related exposure to Pb. METHODS: Four macroscopically normal femoral heads and three patellas were harvested from randomly selected forensic autopsies. All subjects died of acute illnesses, had no history of work-related exposure to Pb and had no metabolic bone disease. The elemental distribution of lead (Pb) together with zinc (Zn), strontium (Sr) and calcium (Ca) in the chondral and subchondral region was detected using high resolution synchrotron radiation induced micro X-ray fluorescence (SR mu-XRF) analysis. SR mu-XRF line scans in conventional and SR mu-XRF area scans in confocal geometry were correlated to backscattered electron (BE) images visualizing the mineralized tissue. RESULTS: In all samples, we found a highly specific accumulation of Pb in the tidemark, the transition zone between calcified and non-calcified articular cartilage. Pb fluorescence intensities in the tidemark, which is thought to be a metabolically active mineralization front, were 13-fold higher when compared to subchondral bone. Pb intensities in the subchondral region were strongly correlated with Zn, but were distinctly different from Ca and Sr. CONCLUSIONS: The finding of the highly specific accumulation of lead in the tidemark of human articular cartilage is novel. However at this point, the exact mechanisms of the local Pb accumulation as well as its clinical implications are unknown.


Subject(s)
Cartilage, Articular/chemistry , Electron Probe Microanalysis/methods , Knee Joint , Lead/analysis , Calcium/analysis , Cartilage, Articular/metabolism , Female , Femur Head , Humans , Lead/metabolism , Male , Patella , Strontium/analysis , Zinc/analysis
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