ABSTRACT
Amorphous GaSb nanofibers were obtained by ion beam irradiation of bulk GaSb single-crystal wafers, resulting in fibers with diameters of ~20 nm. The Raman spectra and photoluminescence (PL) of the ion irradiation-induced nanofibers before and after annealing were studied. Results show that the Raman intensity of the GaSb LO phonon mode decreased after ion beam irradiation as a result of the formation of the amorphous nanofibers. A new mode is observed at ~155 cm(-1) both from the unannealed and annealed GaSb nanofiber samples related to the A1g mode of Sb-Sb bond vibration. Room temperature PL measurements of the annealed nanofibers present a wide feature band at ~1.4-1.6 eV. The room temperature PL properties of the irradiated samples presents a large blue shift compared to bulk GaSb. Annealed nanofibers and annealed nanofibers with Au nanodots present two different PL peaks (400 and 540 nm), both of which may originate from Ga or O vacancies in GaO. The enhanced PL and new band characteristics in nanostructured GaSb suggest that the nanostructured fibers may have unique applications in optoelectronic devices.
ABSTRACT
High-energy ion irradiation of InSb results in the formation of bimodal surface structures, namely microscale hillock-like structures fully composed of nanoscale fibers. Analysis of the surface structures by a wide range of electron microscopy techniques reveals correlations between the irradiation conditions, such as the ion energy and fluence, and changes in the surface morphology. Sputtering effects play a key role in the integrity of the surface layer with increasing ion fluence. Possible mechanisms responsible for the morphological transformation are discussed, including both irradiation-induced and mechanical effects.
