ABSTRACT
Competition between spin-orbit interaction and electron correlations can stabilize a variety of non-trivial electronic and magnetic ground states. Using density functional theory calculations, here we show that different exotic electronic and magnetic ground states can be obtained by electron filling of the B-site cation in the Na2BO3 family of compounds (B = Ta, Ir, Pt and Tl). Electron filling leads to a Peierls insulator state with a direct band gap to j = 1/2 spin-orbit assisted Mott-insulator to band insulator and then to negative charge-transfer half-metal transition. The magnetic ground state also undergoes a transition from a non-magnetic state to a zigzag antiferromagnetic state, a re-entrant non-magnetic state and finally to a ferromagnetic state. The electron localization function shows a ladder type dimerization or Peierls instability in Na2TaO3. Maximally localized Wannier function calculations reveal delocalization of electrons through the eg orbitals, which form a π bond, and localization of electrons through the t2g orbitals, which form a σ bond, between the neighbouring tantalum ions. Na2TlO3 shows Stoner or band ferromagnetism due to the localized moments with up-spin on oxygen ligands created by the negative charge-transfer character, interacting via the down-spin itinerant electrons of the Tl 5d-O 2p hybridized band. These findings are significant for practical applications; for instance the direct band gap insulator Na2TaO3 shows potential for utilisation in solar cells, while Na2TlO3, which exhibits ferromagnetic half metallicity, holds promise for spintronic device applications.
ABSTRACT
Magnetoelastic and magnetoelectric coupling in the artificial multiferroic heterostructures facilitate valuable features for device applications such as magnetic field sensors and electric-write magnetic-read memory devices. In ferromagnetic/ferroelectric heterostructures, the intertwined physical properties can be manipulated by an external perturbation, such as an electric field, temperature, or a magnetic field. Here, we demonstrate the remote-controlled tunability of these effects under visible, coherent, and polarized light. The combined surface and bulk magnetic study of domain-correlated Ni/BaTiO3 heterostructures reveals that the system shows strong sensitivity to the light illumination via the combined effect of piezoelectricity, ferroelectric polarization, spin imbalance, magnetostriction, and magnetoelectric coupling. A well-defined ferroelastic domain structure is fully transferred from a ferroelectric substrate to the magnetostrictive layer via interface strain transfer. The visible light illumination is used to manipulate the original ferromagnetic microstructure by the light-induced domain wall motion in ferroelectric substrates and consequently the domain wall motion in the ferromagnetic layer. Our findings mimic the attractive remote-controlled ferroelectric random-access memory write and magnetic random-access memory read application scenarios, hence facilitating a perspective for room temperature spintronic device applications.
ABSTRACT
BaBiO3(BBO) is known to be a valence-skipping perovskite, which avoids the metallic state through charge disproportionation (CD), the mechanism of which is still unresolved. A novel mechanism for CD is presented here in the covalent limit using a molecular orbital (MO) picture under two scenarios: (case i) Bi 6sp-O 2p and (case ii) Bi 6p-O 2p hybridizations that favor 5+ and 3+ states, respectively. The proposed model is further validated by using a combinatorial approach of X-ray spectroscopic experiments and first-principle calculations. The bulk X-ray photoemission spectrum reveals that, at room temperature, the CD is dynamic in nature, whereas, at 200 K, it approaches a quasi-static limit. Under compressive strain, the octahedral breathing mode is damped and drives the system to a quasi-static limit even at room temperature, giving rise to asymmetric CD.
