ABSTRACT
This paper describes the dynamical simulation of electron channeling contrast images (ECCIs) of dislocations. The approach utilizes both the Bloch wave formalism and the scattering matrix formalism to generate electron channeling patterns (ECPs). The latter formalism is then adapted to include the effect of lattice defects on the back-scattered electron yield, resulting in a computational algorithm for the simulation of ECCIs. Dislocations of known line direction and Burgers vector are imaged experimentally by ECCI and match well with simulated ECCIs for various channeling conditions. Experiment/simulation comparisons for ECPs and ECCIs are demonstrated for metals (Al), semiconductors (Si), and ceramics (SrTiO3).
ABSTRACT
Cathodoluminescence real-color imaging and spectroscopy were employed to study the properties of Ga(2)O(3) nanowires grown with different Sn/Ga ratios. The structures grown under Sn-rich conditions show large spectral emission variation, ranging from blue to red, with a green transition zone. Spectral emission changes correlate with changes in the chemical composition and structure found by energy dispersive spectroscopy and electron diffraction. A sharp transition from green to red emission correlates with a phase transition of beta-Ga(2)O(3) to polycrystalline SnO(2). The origin of the green emission band is discussed based on ab initio calculation results.
