Omni-conducting and omni-insulating molecules.

The source and sink potential model is used to predict the existence of omni-conductors (and omni-insulators): molecular conjugated π systems that respectively support ballistic conduction or show insulation at the Fermi level, irrespective of the centres chosen as connections. Distinct, ipso, and strong omni-conductors/omni-insulators show Fermi-level conduction/insulation for all distinct pairs of connections, for all connections via a single centre, and for both, respectively. The class of conduction behaviour depends critically on the number of non-bonding orbitals (NBO) of the molecular system (corresponding to the nullity of the graph). Distinct omni-conductors have at most one NBO; distinct omni-insulators have at least two NBO; strong omni-insulators do not exist for any number of NBO. Distinct omni-conductors with a single NBO are all also strong and correspond exactly to the class of graphs known as nut graphs. Families of conjugated hydrocarbons corresponding to chemical graphs with predicted omni-conducting/insulating behaviour are identified. For example, most fullerenes are predicted to be strong omni-conductors.

A selection rule for molecular conduction.

Conditions for transmission of a pi-conjugated molecular conductor are derived within the source and sink potential approach in terms of numbers of nonbonding levels of four graphs: The molecular graph G and the three vertex-deleted subgraphs obtained by removing one or both contact vertices. For all bipartite and most nonbipartite G, counting nonbonding levels gives a simple necessary and sufficient condition for conduction at the Fermi level. The exceptional case is where G is nonbipartite and all four graphs have the same number of nonbonding levels; then, an auxiliary requirement involving tail coefficients of the four characteristic polynomials must also be checked.

Fragment analysis of single-molecule conduction.

In the tight-binding source and sink potential model of transmission in single-molecule pi-conjugated conductors, vanishing of the opacity polynomial defines a necessary condition for zero conductance at a given energy. Theorems are given for calculating opacity polynomials of composite devices in terms of opacity and characteristic polynomials of the subunits. These relations rationalize the positions and shapes of zeros in transmission curves for devices consisting of molecules with side chains or of units assembled in series and take an especially simple form for polymeric molecules with identical repeat units.

Conduction in graphenes.

It is shown that, within the tight-binding approximation, Fermi-level ballistic conduction for a perimeter-connected graphene fragment follows a simple selection rule: the zero eigenvalues of the molecular graph and of its subgraph minus both contact vertices must be equal in number, as must those of the two subgraphs with single contact vertices deleted. In chemical terms, the new rule therefore involves counting nonbonding orbitals of four molecules. The rule is initially derived within the source and sink potential scattering framework, but has equivalent forms that unify the molecular-orbital and valence-bond approaches to conduction. It is shown that the new selection rule can be cast in terms of Kekule counts, bond orders, and frontier-orbital coefficients. In particular, for a Kekulean graphene, conduction pathways are shown to be ranked in efficiency by a (nonmonotonic) function of Pauling bond order between the contact vertices. Frontier-orbital analysis of conduction approximates this function. For a monoradical graphene, the analogous function is shown to depend on Pauling spin densities at contact vertices.

The Gaussian Generalized Born model: application to small molecules.

This work presents a Generalized Born model for the computation of the electrostatic component of solvation energies which is based on volume integration. An analytic masking function is introduced to remove Coulombic singularities. This approach leads to analytic formulae for the computation of Born radii, which are differentiable to arbitrary order, and computationally straightforward to implement.