Hyperspectral microscopy of boron nitride nanolayers using hybrid femto/picosecond coherent anti-Stokes Raman scattering.

The rise in interest in two-dimensional (2D) nanomaterials has been notable in recent years. In particular, hexagonal boron nitride (h-BN), recognized as an optimal substrate for enhancing graphene properties, holds promise for electronic applications. However, the widely employed spontaneous Raman microscopy, a gold standard for graphene study, faces strong limitations in h-BN due to its large bandgap and low cross section. In this Letter, high-resolution femto/picosecond coherent anti-Stokes Raman scattering (fs/ps-CARS) spectroscopy is used for hyperspectral imaging of nanometric h-BN layers. Our study establishes that CARS signal effectively enhances Raman signature related to in-plane ring vibrations, thus providing valuable quantitative insights into sample thickness and crystalline quality, also corroborated by additional AFM measurements.

Spectral Fingerprint of Quantum Confinement in Single CsPbBr3 Nanocrystals.

Lead halide perovskite nanocrystals are promising materials for classical and quantum light emission. To understand these outstanding properties, a thorough analysis of the band-edge exciton emission is needed, which is not reachable in ensemble and room-temperature studies because of broadening effects. Here, we report on a cryogenic-temperature study of the photoluminescence of single CsPbBr3 nanocrystals in the intermediate quantum confinement regime. We reveal the size-dependence of the spectral features observed: the bright triplet exciton energy splittings, the trion and biexciton binding energies, and the optical phonon replica spectrum. In addition, we show that bright triplet energy splittings are consistent with a pure exchange model and that the variety of polarization properties and spectra recorded can be rationalized simply by considering the orientation of the emitting dipoles and the populations of the emitting states.

Position-controlled quantum emitters with reproducible emission wavelength in hexagonal boron nitride.

Single photon emitters (SPEs) in low-dimensional layered materials have recently gained a large interest owing to the auspicious perspectives of integration and extreme miniaturization offered by this class of materials. However, accurate control of both the spatial location and the emission wavelength of the quantum emitters is essentially lacking to date, thus hindering further technological steps towards scalable quantum photonic devices. Here, we evidence SPEs in high purity synthetic hexagonal boron nitride (hBN) that can be activated by an electron beam at chosen locations. SPE ensembles are generated with a spatial accuracy better than the cubed emission wavelength, thus opening the way to integration in optical microstructures. Stable and bright single photon emission is subsequently observed in the visible range up to room temperature upon non-resonant laser excitation. Moreover, the low-temperature emission wavelength is reproducible, with an ensemble distribution of width 3 meV, a statistical dispersion that is more than one order of magnitude lower than the narrowest wavelength spreads obtained in epitaxial hBN samples. Our findings constitute an essential step towards the realization of top-down integrated devices based on identical quantum emitters in 2D materials.

DNA Hybridization Measured with Graphene Transistor Arrays.

Arrays of field-effect transistors are fabricated from chemical vapor deposition grown graphene (GFETs) and label-free detection of DNA hybridization performed down to femtomolar concentrations. A process is developed for large-area graphene sheets, which includes a thin Al2 O3 layer, protecting the graphene from contamination during photolithographic patterning and a SiOx capping for biocompatibility. It enables fabrication of high-quality transistor arrays, exhibiting stable close-to-zero Dirac point voltages under ambient conditions. Passivation of the as-fabricated chip with a layer composed of two different oxides avoids direct electrochemical contact between the DNA solutions and the graphene layer during hybridization detection. DNA probe molecules are electrostatically immobilized via poly-l-lysine coating of the chip surface. Adsorption of this positively charged polymer induces a positive shift of the Dirac point and subsequent immobilization of negatively charged DNA probes induces a negative shift. Spatially resolved hybridization of DNA sequences is performed on the GFET arrays. End-point as well as real-time in situ measurements of hybridization are achieved. A detection limit of 10 fm is observed for hybridization of 20-nucleotide DNA targets. Typical voltage signals are around 100 mV and spurious drifts below 1 mV per hour.

Controlling the directional emission of light by periodic arrays of heterostructured semiconductor nanowires.

We demonstrate experimentally the directional emission of light by InAsP segments embedded in InP nanowires. The nanowires are arranged in a periodic array, forming a 2D photonic crystal slab. The directionality of the emission is interpreted in terms of the preferential decay of the photoexcited nanowires and the InAsP segments into Bloch modes of the periodic structure. By simulating the emission of arrays of nanowires with the emitting segments located at different heights, we conclude that the position of this active region strongly influences the directionality and efficiency of the emission. Our results will help to improve the design of nanowire based LEDs and single photon sources.

Generic nano-imprint process for fabrication of nanowire arrays.

A generic process has been developed to grow nearly defect-free arrays of (heterostructured) InP and GaP nanowires. Soft nano-imprint lithography has been used to pattern gold particle arrays on full 2 inch substrates. After lift-off organic residues remain on the surface, which induce the growth of additional undesired nanowires. We show that cleaning of the samples before growth with piranha solution in combination with a thermal anneal at 550 degrees C for InP and 700 degrees C for GaP results in uniform nanowire arrays with 1% variation in nanowire length, and without undesired extra nanowires. Our chemical cleaning procedure is applicable to other lithographic techniques such as e-beam lithography, and therefore represents a generic process.