Imaging photoinduced surface potentials on hybrid perovskites by real-time Scanning Electron Microscopy.

We introduce laser-assisted Time-Resolved SEM (TR-SEM), joining Scanning Electron Microscopy and laser light excitation, to probe the long-term temporal evolution of optically excited charge distributions at the surface of Metal Ammonium Lead Triiodide (MAPbI3) hybrid perovskite thin films. Laser-assisted TR-SEM relies on the optically induced local modification of Secondary Electron (SE) detection yield to provide mapping of photoexcited potentials and charge dynamics at surfaces, and qualifies as a complementary approach to near-field probe microscopies and nonlinear photoemission spectroscopies for photovoltage measurements. Real-time imaging of evolving field patterns are provided on timescales compatible with SEM scanning rates, so that temporal resolution in the millisecond range can be ultimately envisaged. MAPbI3 is an outstanding light-sensitive material candidate for applications in solar light harvesting and photovoltaics, also appealing as an active system for light generation. In this work, the real time temporal evolution of optically induced SE contrast patterns in MAPbI3 is experimentally recorded, both under illumination by a 405 nm blue laser and after light removal, showing the occurrence of modifications related to photoinduced positive charge fields at surface. The long term evolution of these surface fields are tentatively attributed to ion migration within the film, under the action of the illumination gradient and the hole collecting substrate. This optical excitation is fully reversible in MAPbI3 over timescales of hours and a complete recovery of the system occurs within days. Permanent irradiation damage of the material is avoided by operating the SEM at 5 keV of energy and 1-10 pA of primary current. Optical excitation is provided by intense above-bandgap illumination (up to 50 W/cm2). TR-SEM patterns show a strong dependence on the geometry of SE collection. Measurements are taken at different axial orientations of the sample with respect to the entrance of the in-column detection system of the SEM and compared with numerical modeling of the SE detection process. This enables to single out the information regarding the local potential distribution. Results are interpreted by combining data about the spectral distribution of emitted SEs with the configuration of the electric and magnetic fields in the specimen chamber. The present modeling sets a robust basis for the understanding of photoinduced SE electron contrast.

Charge dynamics in aluminum oxide thin film studied by ultrafast scanning electron microscopy.

The excitation dynamics of defects in insulators plays a central role in a variety of fields from Electronics and Photonics to Quantum computing. We report here a time-resolved measurement of electron dynamics in 100 nm film of aluminum oxide on silicon by Ultrafast Scanning Electron Microscopy (USEM). In our pump-probe setup, an UV femtosecond laser excitation pulse and a delayed picosecond electron probe pulse are spatially overlapped on the sample, triggering Secondary Electrons (SE) emission to the detector. The zero of the pump-probe delay and the time resolution were determined by measuring the dynamics of laser-induced SE contrast on silicon. We observed fast dynamics with components ranging from tens of picoseconds to few nanoseconds, that fits within the timescales typical of the UV color center evolution. The surface sensitivity of SE detection gives to the USEM the potential of applying pump-probe investigations to charge dynamics at surfaces and interfaces of current nano-devices. The present work demonstrates this approach on large gap insulator surfaces.

High-contrast waveguides in sputtered pure TeO2 glass thin films.

We present a technological approach to the realization of channeled optical waveguides, starting from reactively sputtered tellurite glass thin films, grown on silica-coated 4" Si wafers. In particular, optical lithographic process and etching recipes have been developed to overcome the solubility of TeO(2) films in aqueous solutions, and to process them into high-index contrast structures with minimized post-etch roughness. Optical tests on preliminary rib waveguide geometries feature 6.3 dB/cm propagation loss for fundamental TE mode at lambda = 1.5 microm.

Reflection photoelastic tomography for the detection of stress distribution in planar optical waveguides.

A novel method for measuring local stress distributions and birefringence of films on substrates and planar optical waveguides, with submicrometric resolution, is presented. The technique relies on a reflective tomographic configuration, applied in conjunction with a polarimetric setup, which processes the stress-induced change of the state of polarization of a laser probe beam reflected at the waveguide-substrate (film-substrate) interface. By this means, theoretically foreseen stress behavior can be experimentally verified and spurious or induced local stress variations in integrated optics components can also be brought into evidence. The feasibility of the proposed method has been verified by reconstructing the two-dimensional axial stress distribution in the 4 x 2 microm(2) core region of a doped silica-on-silicon optical waveguide.