Relaxation to a Phase-Locked Equilibrium State in a One-Dimensional Bosonic Josephson Junction.

We present an experimental study on the nonequilibrium tunnel dynamics of two coupled one-dimensional Bose-Einstein quasicondensates deep in the Josephson regime. Josephson oscillations are initiated by splitting a single one-dimensional condensate and imprinting a relative phase between the superfluids. Regardless of the initial state and experimental parameters, the dynamics of the relative phase and atom number imbalance shows a relaxation to a phase-locked steady state. The latter is characterized by a high phase coherence and reduced fluctuations with respect to the initial state. We propose an empirical model based on the analogy with the anharmonic oscillator to describe the effect of various experimental parameters. A microscopic theory compatible with our observations is still missing.

Epitaxial graphene on 4H-SiC(0001) grown under nitrogen flux: evidence of low nitrogen doping and high charge transfer.

Nitrogen doping of graphene is of great interest for both fundamental research to explore the effect of dopants on a 2D electrical conductor and applications such as lithium storage, composites, and nanoelectronic devices. Here, we report on the modifications of the electronic properties of epitaxial graphene thanks to the introduction, during the growth, of nitrogen-atom substitution in the carbon honeycomb lattice. High-resolution transmission microscopy and low-energy electron microscopy investigations indicate that the nitrogen-doped graphene is uniform at large scale. The substitution of nitrogen atoms in the graphene planes was confirmed by high-resolution X-ray photoelectron spectroscopy, which reveals several atomic configurations for the nitrogen atoms: graphitic-like, pyridine-like, and pyrrolic-like. Angle-resolved photoemission measurements show that the N-doped graphene exhibits large n-type carrier concentrations of 2.6 × 10(13) cm(-2), about 4 times more than what is found for pristine graphene, grown under similar pressure conditions. Our experiments demonstrate that a small amount of dopants (<1%) can significantly tune the electronic properties of graphene by shifting the Dirac cone about 0.3 eV toward higher binding energies with respect to the π band of pristine graphene, which is a key feature for envisioning applications in nanoelectronics.