Investigation of the morphological and fractal behavior at nanoscale of patterning lines by scratching in an atomic force microscope.

In this work, the topographical effect of the scratching trajectory and the feed direction on the formation of lithographed lines on the (001) InP surface was investigated using an atomic force microscope (AFM) tip-based nanomachining approach. Nanoscratching tests were carried out using the sharp face of a diamond AFM tip in contact mode. From the topographic maps obtained by AFM, several morphological and fractal parameters were obtained and analyzed. Surface morphology presented a surface smoothing for surfaces with scratches produced in [011] and [001] directions. The height parameters confirmed this behavior because scratches in [001] direction exhibited lower roughness. Moreover, this scratch direction promoted the height distribution most symmetrical and platykurtic. The other morphological parameters revealed that this direction provided a more irregular surface (smaller Smc and Sxp ), peak distribution, denser and pointed, smaller portion of material in the core, less deep furrows, higher spatial frequency components, and high isotropy. Fractal parameters revealed that FRE90 has the highest spatial complexity, it is dominated by higher spatial frequencies, and has the lowest surface percolation. Furthermore, all samples exhibited high topographic uniformity.

Observation of partial relaxation mechanisms via anisotropic strain relief on epitaxial islands using semiconductor nanomembranes.

In this work we attempt to directly observe anisotropic partial relaxation of epitaxial InAs islands using transmission electron microscopy (TEM) and synchrotron x-ray diffraction on a 15 nm thick InAs:GaAs nanomembrane. We show that under such conditions TEM provides improved real-space statistics, allowing the observation of partial relaxation processes that were not previously detected by other techniques or by usual TEM cross section images. Besides the fully coherent and fully relaxed islands that are known to exist above previously established critical thickness, we prove the existence of partially relaxed islands, where incomplete 60° half-loop misfit dislocations lead to a lattice relaxation along one of the 〈110〉 directions, keeping a strained lattice in the perpendicular direction. Although individual defects cannot be directly observed, their implications to the resulting island registry are identified and discussed within the frame of half-loops propagations.