ABSTRACT
In this work, a method was developed to determine the concentration of Eu3+ and Tb3+ ions in a thin-film sample of SiO2, co-doped with ZnO-nanocrystals (ZnO-nc), to produce a sample of any desired colour in the International Commission on Illumination (CIE) colour space. Using this method, a white light emitting sample was fabricated. The thin-film sample combines red, green and blue emissions from the Eu3+ ions, Tb3+ ions and ZnO-nc, respectively, to create white light or light of any desired colour. The emissions at 614 nm and 545 nm from Eu3+ and Tb3+ ions, respectively, is due to the energy transfer from the excited ZnO-nc to the rare-earth (RE) ions. In this way, only a single excitation wavelength is needed to excite the ZnO-nc, Eu3+ and Tb3+ ions in the sample to produce emission of a desired colour from the sample. We developed an empirical 4th-degree polynomial equation to determine the concentrations of Eu3+ and Tb3+ ions to produce light of any desired colour in the CIE colour space. Based on the above empirical equation, the concentration of Eu3+ and Tb3+ ions for a white light emitting sample was found to be 0.012 and 0.024 molar fractions, respectively. The white light emission from the sample was confirmed by fabricating the sample using the low-cost sol-gel process. The stimulated emission spectra and the experimental emission spectra of the white light sample fit very well. The results presented in this work are important to develop energy efficient solid state lighting devices.
ABSTRACT
In this work, we study the energy transfer mechanism from ZnO nanocrystals (ZnO-nc) to Eu3+ ions by fabricating thin-film samples of ZnO-nc and Eu3+ ions embedded in a SiO2 matrix using the low-cost sol-gel technique. The time-resolved photoluminescence (TRPL) measurements from the samples were analyzed to understand the contribution of energy transfer from the various ZnO-nc emission centers to Eu3+ ions. The decay time obtained from the TRPL measurements was used to calculate the energy transfer efficiencies from the ZnO-nc emission centers, and these results were compared with the energy transfer efficiencies calculated from steady-state photoluminescence emission results. The results in this work show that high transfer efficiencies from the excitonic and Zn defect emission centers is mostly due to the energy transfer from ZnO-nc to Eu3+ ions which results in the radiative emission from the Eu3+ ions at 614 nm, while the energy transfer from the oxygen defect emissions is most probably due to the energy transfer from ZnO-nc to the new defects created due to the incorporation of the Eu3+ ions.
ABSTRACT
In this work, we investigate the efficient energy transfer occurring between ZnO nanocrystals (ZnO-nc) and europium (Eu(3+)) ions embedded in a SiO2 matrix prepared using the sol-gel technique. We show that a strong red emission was observed at 614 nm when the ZnO-nc were excited using a continuous optical excitation at 325 nm. This emission is due to the radiative (5)D0 â (7)F2 de-excitation of the Eu(3+) ions and has been conclusively shown to be due to the energy transfer from the excited ZnO-nc to the Eu(3+) ions. The photoluminescence excitation spectra are also examined in this work to confirm the energy transfer from ZnO-nc to the Eu(3+) ions. Furthermore, we study various de-excitation processes from the excited ZnO-nc and their contribution to the energy transfer to Eu(3+) ions. We also report the optimum fabrication process for maximum red emission at 614 nm from the samples where we show a strong dependence on the annealing temperature and the Eu(3+) concentration in the sample. The maximum red emission is observed with 12 mol% Eu(3+) annealed at 450 °C. This work provides a better understanding of the energy transfer mechanism from ZnO-nc to Eu(3+) ions and is important for applications in photonics, especially for light emitting devices.
ABSTRACT
We report on efficient ZnO nanocrystal (ZnO-NC) emission in the near-UV region. We show that luminescence from ZnO nanocrystals embedded in a SiO2 matrix can vary significantly as a function of the annealing temperature from 450°C to 700°C. We manage to correlate the emission of the ZnO nanocrystals embedded in SiO2 thin films with transmission electron microscopy images in order to optimize the fabrication process. Emission can be explained using two main contributions, near-band-edge emission (UV range) and defect-related emissions (visible). Both contributions over 500°C are found to be size dependent in intensity due to a decrease of the absorption cross section. For the smallest-size nanocrystals, UV emission can only be accounted for using a blueshifted UV contribution as compared to the ZnO band gap. In order to further optimize the emission properties, we have studied different annealing atmospheres under oxygen and under argon gas. We conclude that a softer annealing temperature at 450°C but with longer annealing time under oxygen is the most preferable scenario in order to improve near-UV emission of the ZnO nanocrystals embedded in an SiO2 matrix.
ABSTRACT
The functionality of optical components relies heavily on the composition-dependent properties of germanosilicate materials, which include the refractive index, photosensitivity, and microstructural properties. Recent studies and parallel developments are presented of germanosilicate films with composition x of Ge content (i.e., xGeO(2):(1-x)SiO(2)) that were synthesized by the solgel process for various integrated photonic applications undertaken. The following novel aspects are discussed with respect to the effect of composition of the glassy films (0.05
