ABSTRACT
The control of the self-assembly (SA) process and nanostructure orientation in diblock copolymer (DBC) thick films is a crucial technological issue. Perpendicular orientation of the nanostructures in symmetric and asymmetric poly(styrene)-b-poly(methyl methacrylate) (PS-b-PMMA) block copolymer films obtained by means of simple thermal treatments was demonstrated to occur in well-defined thickness windows featuring modest maximum values, thus resulting in low aspect ratio (h/d < 2) of the final lithographic mask. In this manuscript, the thickness window corresponding to the perpendicular orientation of the cylindrical structures in asymmetric DBC is investigated at high temperatures (190 °C ≤ T ≤ 310 °C) using a rapid thermal processing machine. A systematic study of the annealing conditions (temperature and time) of asymmetric PS-b-PMMA (Mn = 67.1, polydispersity index = 1.09) films, with thicknesses ranging from 10 to 400 nm, allowed ordered patterns, with a maximum value of orientational correlation length of 350 nm, to be obtained for film thicknesses up to 200 nm. The complete propagation of the cylindrical structures through the whole film thickness in a high aspect ratio PS template (h/d ≈ 7) is probed by lift-off process. Si nanopillars are obtained having the same lateral ordering and characteristic dimensions of the DBC lithographic mask as further confirmed by grazing-incidence small-angle X-ray scattering experiments.
ABSTRACT
We present a study on amorphous SiO/SiO2 superlattice formation on Si substrate held at room temperature and annealed in the temperature range 600-1100 degrees C. Grazing-incidence small-angle X-ray scattering (GISAXS) and X-ray reflectivity were used to study such samples. Amorphous SiO/SiO2 superlattices were prepared by high vacuum physical vapor deposition of 4 nm thin films of SiO and SiO2 (10 layers each) from corresponding targets on silicon substrate. Rotation of the Si substrate during evaporation ensured homogeneity of the films over the whole substrate. We observed that the inhomogeneities introduced into the SiO and SiO2 layers during the deposition (evaporation) give rise to small angle scattering at lower annealing temperatures. After an initial SiO layer thickness reduction for 600 degrees C annealing, these thicknesses remain virtually unchanged up to 1000 degrees C, where they start to decrease again which leads to particle formation. Nevertheless, this compacting at low temperatures may lead to the seed formation in SiO layers that will facilitate later Si nanoparticles growth.
