DNA Hybridization Measured with Graphene Transistor Arrays.

Arrays of field-effect transistors are fabricated from chemical vapor deposition grown graphene (GFETs) and label-free detection of DNA hybridization performed down to femtomolar concentrations. A process is developed for large-area graphene sheets, which includes a thin Al2 O3 layer, protecting the graphene from contamination during photolithographic patterning and a SiOx capping for biocompatibility. It enables fabrication of high-quality transistor arrays, exhibiting stable close-to-zero Dirac point voltages under ambient conditions. Passivation of the as-fabricated chip with a layer composed of two different oxides avoids direct electrochemical contact between the DNA solutions and the graphene layer during hybridization detection. DNA probe molecules are electrostatically immobilized via poly-l-lysine coating of the chip surface. Adsorption of this positively charged polymer induces a positive shift of the Dirac point and subsequent immobilization of negatively charged DNA probes induces a negative shift. Spatially resolved hybridization of DNA sequences is performed on the GFET arrays. End-point as well as real-time in situ measurements of hybridization are achieved. A detection limit of 10 fm is observed for hybridization of 20-nucleotide DNA targets. Typical voltage signals are around 100 mV and spurious drifts below 1 mV per hour.

Dynamical Separation of Bulk and Edge Transport in HgTe-Based 2D Topological Insulators.

Topological effects in edge states are clearly visible on short lengths only, thus largely impeding their studies. On larger distances, one may be able to dynamically enhance topological signatures by exploiting the high mobility of edge states with respect to bulk carriers. Our work on microwave spectroscopy highlights the response of the edges which host very mobile carriers, while bulk carriers are drastically slowed down in the gap. Though the edges are denser than expected, we establish that charge relaxation occurs on short timescales and suggest that edge states can be addressed selectively on timescales over which bulk carriers are frozen.

Layering Transition in Superfluid Helium Adsorbed on a Carbon Nanotube Mechanical Resonator.

Helium is recognized as a model system for the study of phase transitions. Of particular interest is the superfluid phase in two dimensions. We report measurements on superfluid helium films adsorbed on the surface of a suspended carbon nanotube. We measure the mechanical vibrations of the nanotube to probe the adsorbed helium film. We demonstrate the formation of helium layers up to five atoms thickness. Upon increasing the vapor pressure, we observe layer-by-layer growth with discontinuities in both the number of adsorbed atoms and the speed of the third sound in the adsorbed film. These hitherto unobserved discontinuities point to a series of first-order layering transitions. Our results show that helium multilayers adsorbed on a nanotube are of unprecedented quality compared to previous works. They pave the way to new studies of quantized superfluid vortex dynamics on cylindrical surfaces, of the Berezinskii-Kosterlitz-Thouless phase transition in this new geometry, and perhaps also to supersolidity in crystalline single layers as predicted in quantum Monte Carlo calculations.

A graphene Zener-Klein transistor cooled by a hyperbolic substrate.

The engineering of cooling mechanisms is a bottleneck in nanoelectronics. Thermal exchanges in diffusive graphene are mostly driven by defect-assisted acoustic phonon scattering, but the case of high-mobility graphene on hexagonal boron nitride (hBN) is radically different, with a prominent contribution of remote phonons from the substrate. Bilayer graphene on a hBN transistor with a local gate is driven in a regime where almost perfect current saturation is achieved by compensation of the decrease in the carrier density and Zener-Klein tunnelling (ZKT) at high bias. Using noise thermometry, we show that the ZKT triggers a new cooling pathway due to the emission of hyperbolic phonon polaritons in hBN by out-of-equilibrium electron-hole pairs beyond the super-Planckian regime. The combination of ZKT transport and hyperbolic phonon polariton cooling renders graphene on BN transistors a valuable nanotechnology for power devices and RF electronics.

Hofstadter Butterfly and Many-Body Effects in Epitaxial Graphene Superlattice.

Graphene placed on hexagonal boron nitride (h-BN) has received a wide range of interest due to the improved electrical performance and rich physics from the interface, especially the emergence of superlattice Dirac points as well as Hofstadter butterfly in high magnetic field. Instead of transferring graphene onto h-BN, epitaxial growth of graphene directly on a single-crystal h-BN provides an alternative and promising way to study these interesting superlattice effects due to their precise lattice alignment. Here we report an electrical transport study on epitaxial graphene superlattice on h-BN with a period of ∼15.6 nm. The epitaxial graphene superlattice is clean, intrinsic, and of high quality with a carrier mobility of ∼27 000 cm(2) V(-1) s(-1), which enables the observation of Hofstadter butterfly features originated from the superlattice at a magnetic field as low as 6.4 T. A metal-insulator transition and magnetic field dependent Fermi velocity were also observed, suggesting prominent electron-electron interaction-induced many-body effects.

Dimensionality effects on the luminescence properties of hBN.

Cathodoluminescence (CL) experiments at low temperature have been undertaken on various bulk and exfoliated hexagonal boron nitride (hBN) samples. Different bulk crystals grown from different synthesis methods have been studied. All of them present the same so-called S series in the 5.6-6 eV range, proving its intrinsic character. Luminescence spectra of flakes containing 100 down to 6 layers have been recorded. Strong modifications in the same UV range are observed and discussed within the general framework of 2D exciton properties in lamellar crystals.