Measurement System for Short-Pulsed Magnetic Fields.

A measurement system based on the colossal magnetoresistance CMR-B-scalar sensor was developed for the measurement of short-duration high-amplitude magnetic fields. The system consists of a magnetic field sensor made from thin nanostructured manganite film with minimized memory effect, and a magnetic field recording module. The memory effect of the La1-xSrx(Mn1-yCoy)zO3 manganite films doped with different amounts of Co and Mn was investigated by measuring the magnetoresistance (MR) and resistance relaxation in pulsed magnetic fields up to 20 T in the temperature range of 80-365 K. It was found that for low-temperature applications, films doped with Co (LSMCO) are preferable due to the minimized magnetic memory effect at these temperatures, compared with LSMO films without Co. For applications at temperatures higher than room temperature, nanostructured manganite LSMO films with increased Mn content above the stoichiometric level have to be used. These films do not exhibit magnetic memory effects and have higher MR values. To avoid parasitic signal due to electromotive forces appearing in the transmission line of the sensor during measurement of short-pulsed magnetic fields, a bipolar-pulsed voltage supply for the sensor was used. For signal recording, a measurement module consisting of a pulsed voltage generator with a frequency up to 12.5 MHz, a 16-bit ADC with a sampling rate of 25 MHz, and a microprocessor was proposed. The circuit of the measurement module was shielded against low- and high-frequency electromagnetic noise, and the recorded signal was transmitted to a personal computer using a fiber optic link. The system was tested using magnetic field generators, generating magnetic fields with pulse durations ranging from 3 to 20 µs. The developed magnetic field measurement system can be used for the measurement of high-pulsed magnetic fields with pulse durations in the order of microseconds in different fields of science and industry.

Structure Modification, Evolution, and Compositional Changes of Highly Conductive La:BaSnO3 Thin Films Annealed in Vacuum and Air Atmosphere.

Perovskite-type La:BaSnO3 (LBSO) has been drawing considerable attention due to its high electron mobility and optical transparency. Its thin film electrical properties, however, remain inferior to those of single crystals. This work investigates the thermal post-treatment process of films deposited using the metalorganic chemical vapor deposition method to improve the electrical properties of different stoichiometry films, and demonstrates the modification of thin film's structural properties using short and excessive annealing durations in vacuum conditions. Using vacuum post-treatment, we demonstrate the improvement of electrical properties in Ba-rich, near-stoichiometric, and Sn-rich samples with a maximum electron mobility of 116 cm2V-1s-1 at r.t. However, the improvement of electrical properties causes surface morphology and internal structural changes, which depend on thin film composition. At temperatures of 900 °C-1400 °C the volatile nature of LBSO constituting elements is described, which reveals possible deterioration mechanisms of thin LBSO air. At higher than 1200 °C, LBSO film's decomposition rate increases exponentially. Thin film structure evolution and previously unreported decomposition is demonstrated by Ba and La diffusion to the substrate, and by evaporation of SnO-SnOx species.

Enhancement of Room-Temperature Low-Field Magnetoresistance in Nanostructured Lanthanum Manganite Films for Magnetic Sensor Applications.

The results of colossal magnetoresistance (CMR) properties of La1-xSrxMnyO3 (LSMO) films grown by the pulsed injection MOCVD technique onto an Al2O3 substrate are presented. The grown films with different Sr (0.05 ≤ x ≤ 0.3) and Mn excess (y > 1) concentrations were nanostructured with vertically aligned column-shaped crystallites spread perpendicular to the film plane. It was found that microstructure, resistivity, and magnetoresistive properties of the films strongly depend on the strontium and manganese concentration. All films (including low Sr content) exhibit a metal−insulator transition typical for manganites at a certain temperature, Tm. The Tm vs. Sr content dependence for films with a constant Mn amount has maxima that shift to lower Sr values with the increase in Mn excess in the films. Moreover, the higher the Mn excess concentration in the films, the higher the Tm value obtained. The highest Tm values (270 K) were observed for nanostructured LSMO films with x = 0.17−0.18 and y = 1.15, while the highest low-field magnetoresistance (0.8% at 50 mT) at room temperature (290 K) was achieved for x = 0.3 and y = 1.15. The obtained low-field MR values were relatively high in comparison to those published in the literature results for lanthanum manganite films prepared without additional insulating oxide phases. It can be caused by high Curie temperature (383 K), high saturation magnetization at room temperature (870 emu/cm3), and relatively thin grain boundaries. The obtained results allow to fabricate CMR sensors for low magnetic field measurement at room temperature.

Nanostructured Manganite Films Grown by Pulsed Injection MOCVD: Tuning Low- and High-Field Magnetoresistive Properties for Sensors Applications.

The results of colossal magnetoresistance (CMR) properties of La0.83Sr0.17Mn1.21O3 (LSMO) films grown by pulsed injection MOCVD technique onto various substrates are presented. The films with thicknesses of 360 nm and 60 nm grown on AT-cut single crystal quartz, polycrystalline Al2O3, and amorphous Si/SiO2 substrates were nanostructured with column-shaped crystallites spread perpendicular to the film plane. It was found that morphology, microstructure, and magnetoresistive properties of the films strongly depend on the substrate used. The low-field MR at low temperatures (25 K) showed twice higher values (-31% at 0.7 T) for LSMO/quartz in comparison to films grown on the other substrates (-15%). This value is high in comparison to results published in literature for manganite films prepared without additional insulating oxides. The high-field MR measured up to 20 T at 80 K was also the highest for LSMO/quartz films (-56%) and demonstrated the highest sensitivity S = 0.28 V/T at B = 0.25 T (voltage supply 2.5 V), which is promising for magnetic sensor applications. It was demonstrated that Mn excess Mn/(La + Sr) = 1.21 increases the metal-insulator transition temperature of the films up to 285 K, allowing the increase in the operation temperature of magnetic sensors up to 363 K. These results allow us to fabricate CMR sensors with predetermined parameters in a wide range of magnetic fields and temperatures.

Ultralight Magnetic Nanofibrous GdPO4 Aerogel.

Anisotropic aerogels are promising bulk materials with a porous 3D structure, best known for their large surface area, low density, and extremely low thermal conductivity. Herein, we report the synthesis and some properties of ultralight magnetic nanofibrous GdPO4 aerogels. Our proposed GdPO4 aerogel synthesis route is eco-friendly and does not require any harsh precursors or conditions. The most common route for magnetic aerogel preparation is the introduction of magnetic nanoparticles into the structure during the synthesis procedure. However, the nanofibrous GdPO4 aerogel reported in this work is magnetic by itself already and no additives are required. The hydrogel used for nanofibrous GdPO4 aerogel preparation was synthesized via a hydrothermal route. The hydrogel was freeze-dried and heat-treated to induce a phase transformation from the nonmagnetic trigonal to magnetic monoclinic phase. Density of the obtained magnetic nanofibrous monoclinic GdPO4 aerogel is only ca. 8 mg/cm3.

Room temperature Co-doped manganite/graphene sensor operating at high pulsed magnetic fields.

The demand to increase the sensitivity to magnetic field in a broad magnetic field ranges has led to the research of novel materials for sensor applications. Therefore, the hybrid system consisting of two different magnetoresistive materials - nanostructured Co-doped manganite La1-xSrx(Mn1-yCoy)zO3 and single- and few-layer graphene - were combined and investigated as potential system for magnetic field sensing. The negative colossal magnetoresistance (CMR) of manganite-cobaltite and positive one of graphene gives the possibility to increase the sensitivity to magnetic field of the hybrid sensor. The performed magnetoresistance (MR) measurements of individual few layer (n = 1-5) graphene structures revealed the highest MR values for three-layer graphene (3LG), whereas additional Co-doping increased the MR values of nanostructured manganite films. The connection of 3LG graphene and Co-doped magnanite film in a voltage divider configuration significantly increased the sensitivity of the hybrid sensor at low and intermediate magnetic fields (1-2 T): 70 mV/VT of hybrid sensor in comparison with 56 mV/VT for 3LG and 12 mV/VT for Co-doped magnanite film, respectively, and broadened the magnetic field operation range (0.1-20) T of the produced sensor prototype.

Hybrid graphene-manganite thin film structure for magnetoresistive sensor application.

An increasing demand of magnetic field sensors with high sensitivity at room temperatures and spatial resolution at micro-nanoscales has resulted in numerous investigations of physical phenomena in advanced materials, and fabrication of novel magnetoresistive devices. In this study the novel magnetic field sensor based on combination of a single layer graphene (SLG) and thin nanostructured manganite La0.8Sr0.2MnO3 (LSMO) film-hybrid graphene-manganite (GM) structure, is proposed and fabricated. The hybrid GM structure employs the properties of two materials-SLG and LSMO-on the nanoscale level and results in the enhanced sensitivity to magnetic field of the hybrid sensor on the macroscopic level. Such result is achieved by designing the hybrid GM sensor in a Wheatstone half-bridge which enables to employ in the device operation two effects of nanomaterials-large Lorentz force induced positive magnetoresistance of graphene and colossal negative magnetoresistance of nanostructured manganite film, and significantly increase the sensitivity S of the hybrid GM sensor in comparison with the individual SLG and LSMO sensors: S = 5.5 mV T-1 for SLG, 14.5 mV T-1 for LSMO and 20 mV T-1 for hybrid GM at 0.5 T, when supply voltage was 1.249 V. The hybrid GM sensor operates in the range of (0.1-2.3) T and has lower sensitivity to temperature variations in comparison to the manganite sensor. Moreover, it can be applied for position sensing. The ability to control sensor's characteristics by changing technological conditions of the fabrication of hybrid structure and tuning the nanostructure properties of manganite film is discussed.

Relation between thickness, crystallite size and magnetoresistance of nanostructured La1- x Sr x Mn y O3±Î´ films for magnetic field sensors.

In the present study the advantageous pulsed-injection metal organic chemical vapour deposition (PI-MOCVD) technique was used for the growth of nanostructured La1- x Sr x Mn y O3±Î´ (LSMO) films on ceramic Al2O3 substrates. The compositional, structural and magnetoresistive properties of the nanostructured manganite were changed by variation of the processing conditions: precursor solution concentration, supply frequency and number of supply sources during the PI-MOCVD growth process. The results showed that the thick (≈400 nm) nanostructured LSMO films, grown using an additional supply source of precursor solution in an exponentially decreasing manner, exhibit the highest magnetoresistance and the lowest magnetoresistance anisotropy. The possibility to use these films for the development of magnetic field sensors operating at room temperature is discussed.

Electrochemical polypyrrole formation from pyrrole 'adlayer'.

In this research study, we investigated the morphology of polypyrrole nanostructures, which were formed during the electrochemical deposition of conducting polymer. An electrochemical quartz crystal microbalance (EQCM) cell equipped with a flow-through system was employed to exchange solutions of different compositions within the EQCM cell. When bare PBS buffer in the EQCM cell was exchanged with PBS buffer with pyrrole we observed a distinct increase in the resonance frequency Δf. This change in the resonance frequency and electrical capacitance, which was calculated from electrochemical impedance spectroscopy (EIS) data, illustrate that pyrrole on the surface of the gold electrode formed an adsorbed layer (adlayer). The formation of a pyrrole adlayer before the potential pulse that induced polymerization was investigated by QCM-based measurements. The electrochemical polymerization of this adlayer was induced by a single potential pulse and a nanostructured layer, which consisted of adsorbed polypyrrole (Ppy) nanoparticles with a diameter of 50 nm, was formed. QCM and EIS data revealed that by the next cycle of the electrochemical formation of Ppy, which was investigated after flow-through-based exchange of solutions, the initially formed Ppy surface was covered by the adlayer of pyrrole. This adlayer was desorbed when pyrrole was removed from the solution. When electrochemical polymerization was performed using 50 potential pulses, a Ppy layer, which had more complex morphology, was formed on the EQCM crystal. Scanning electron microscopy showed that the conductivity of this layer was unequally distributed. We observed that the polypyrrole layer formed by electrochemical deposition, which was performed using potential pulses, was formed out of aggregated spherical Ppy particles with a diameter of 50 nm.

Identification of LiNbO3, LiNb3O8 and Li3NbO4 phases in thin films synthesized with different deposition techniques by means of XRD and Raman spectroscopy.

Phase composition of epitaxial/textured LiNbO3 films on sapphire substrates, grown by pulsed laser deposition, atmospheric pressure metal organic chemical vapor deposition and pulsed injection metal organic chemical vapor deposition was studied by conventional x-ray diffraction techniques. Raman spectroscopy, being highly sensitive to the symmetry of materials, was used as a countercheck in the compositional analysis. The wavenumbers of Raman modes of LiNb3O8 and Li3NbO4 phases were identified from Raman spectra of synthesized powders. Asymmetry of profiles of x-ray diffraction reflections of LiNbO3 films was studied. This asymmetry may have different origins which consequently may result in misleading conclusions about phase composition of textured LiNbO3 films.