ABSTRACT
A novel photothermal process to spatially modulate the concentration of sub-wavelength, high-index nanocrystals in a multicomponent Ge-As-Pb-Se chalcogenide glass thin film resulting in an optically functional infrared grating is demonstrated. The process results in the formation of an optical nanocomposite possessing ultralow dispersion over unprecedented bandwidth. The spatially tailored index and dispersion modification enables creation of arbitrary refractive index gradients. Sub-bandgap laser exposure generates a Pb-rich amorphous phase transforming on heat treatment to high-index crystal phases. Spatially varying nanocrystal density is controlled by laser dose and is correlated to index change, yielding local index modification to ≈+0.1 in the mid-infrared.
ABSTRACT
The newly discovered 39-K superconductor MgB2 holds great promise for superconducting electronics. Like the conventional superconductor Nb, MgB2 is a phonon-mediated superconductor, with a relatively long coherence length. These properties make the prospect of fabricating reproducible uniform Josephson junctions, the fundamental element of superconducting circuits, much more favourable for MgB2 than for high-temperature superconductors. The higher transition temperature and larger energy gap of MgB2 promise higher operating temperatures and potentially higher speeds than Nb-based integrated circuits. However, success in MgB2 Josephson junctions has been limited because of the lack of an adequate thin-film technology. Because a superconducting integrated circuit uses a multilayer of superconducting, insulating and resistive films, an in situ process in which MgB2 is formed directly on the substrate is desirable. Here we show that this can be achieved by hybrid physical-chemical vapour deposition. The epitaxially grown MgB2 films show a high transition temperature and low resistivity, comparable to the best bulk samples, and their surfaces are smooth. This advance removes a major barrier for superconducting electronics using MgB2.
