High performance InAs/InP quantum dot 34.462-GHz C-band coherent comb laser module.

We have developed an InAs/InP quantum dot (QD) C-band coherent comb laser (CCL) module with actively stabilized absolute wavelength and power, and channel spacing of 34.462 GHz with ± 100 ppm accuracy. The total output power is up to 46 mW. The integrated average relative intensity noise (RIN) values of the lasing spectrum and a filtered single channel at 1540.19 nm were -165.6 dB/Hz and -130.3 dB/Hz respectively in the frequency range from 10 MHz to 10 GHz. The optical linewidth of the 45 filtered individual channels between 1531.77 nm to 1543.77 nm ranged from 850 kHz to 2.16 MHz. We have also analyzed the noise behaviors of each individual channel.

Ultrawide-bandwidth, superluminescent light-emitting diodes using InAs quantum dots of tuned height.

An ultrawide-bandwidth, superluminescent light-emitting diode (SLED) utilizing multiple layers of dots of tuned height is reported. Due to thermal effect, the superluminescent phenomenon is observed only under pulse-mode operation. The device exhibits a 3 dB bandwidth of 190 nm with central wavelength of 1020 nm under continuous-wave (cw) conditions. The maximum corresponding output power achieved in this device under cw and pulsed operation conditions are 0.54 mW and 17 mW, respectively.

Silicon-on-insulator guided mode resonant grating for evanescent field molecular sensing.

We present experimental and theoretical results of label-free molecular sensing using the transverse magnetic mode of a 0.22 mum thick silicon slab waveguide with a surface grating implemented in a guided mode resonance configuration. Due to the strong overlap of the evanescent field of the waveguide mode with a molecular layer attached to the surface, these sensors exhibit high sensitivity, while their fabrication and packaging requirements are modest. Experimentally, we demonstrate a resonance wavelength shift of approximately 1 nm when a monolayer of the protein streptavidin is attached to the surface, in good agreement with calculations based on rigorous coupled wave analysis. In our current optical setup this shift corresponds to an estimated limit of detection of 0.2% of a monolayer of streptavidin.

An L-band monolithic InAs/InP quantum dot mode-locked laser with femtosecond pulses.

We have developed an InAs/InP quantum dot (QD) gain material using a double cap growth procedure and GaP sublayer to tune QDs into the L-band. By using it, a passive L-band mode-locked laser with pulse duration of 445 fs at the repetition rate of 46 GHz was demonstrated. The 3-dB linewidth of the RF spectrum is less than 100 KHz. The lasing threshold injection current is 24 mA with an external differential quantum efficiency of 22% and an average output power of 27 mW. The relationship between pulse duration and 3-dB spectral bandwidth as a function of injection current was investigated.

Dual-wavelength 92.5 GHz self-mode-locked InP-based quantum dot laser.

We report on the generation of dual-wavelength self-mode-locking pulses from an InP-based quantum dot laser. The demonstrated device operates simultaneously at both 1543.7 and 1571.7 nm and has a repetition rate of 92.5 GHz. The pulse width is below 960 fs, and the average power coupled to a cleaved single-mode fiber is nearly 9 mW at a current bias of 60 mA.

312-fs pulse generation from a passive C-band InAs/InP quantum dot mode-locked laser.

For the first time, we report femtosecond pulses from a passive single-section InAs/InP quantum-dot (QD) mode-locked laser (MLL) with the active length of 456 microm and ridge width of 2.5 microm at the C-band wavelength range. Without any external pulse compression, the transform-limited Gaussian-pulses are generated at the 92 GHz repetition rate with the 312 fs pulse duration, which is the shortest pulse from any directly electric-pumping semiconductor MLLs to our best knowledge. The lasing threshold injection current and external differential quantum efficiency are 17.2 mA and 38%, respectively. We have also investigated the working principles of the proposed QD MLLs.

Interphase in plasma-deposited films on plastics: effect on the spectral properties of optical filters.

The plasma-enhanced chemical vapor deposition of optical coatings on plastic substrates leads to the formation of a physically thick (approximately 50-100-nm) interfacial region (or interphase). We propose, based on our earlier spectroellipsometric (in situ and ex situ) and spectrophotometric (ex situ) studies, an optical model for the description of the interphase refractive-index profile n(z). We study in detail the effect of such an interphase on the spectral performance of various optical filters (antireflective V-coat, W-coat, achromatic W-coat, and minus filter). It is shown that considering the inhomogeneous n(z) profile in the design can improve the optical performance of some filters.

Simple Method for Determining Slowly Varying Refractive-Index Profiles from in situ Spectrophotometric Measurements.

Reliable control of the deposition process of optical films and coatings frequently requires monitoring the refractive-index profile throughout the layer. In the present research a simple in situ approach is proposed that uses a WKBJ matrix representation of the optical transfer function of a single thin film on a substrate. Mathematical expressions are developed that represent the minima and the maxima envelopes of the curves transmittance versus time and reflectance versus time. The refractive index and the extinction coefficient depth profiles of different films are calculated from simulated spectra as well as from experimental data obtained during the PECVD (plasma-enhanced chemical vapor deposition) of silicon-compound films. Variation in the deposition rate with time is also evaluated from the position of the spectra extrema as a function of time. The physical and mathematical limitations of the method are discussed.

A technique for fixation of retention sutures using two bolsters.

Retention sutures using two bolsters provide inherent mechanical advantages in approximating wound edges. As demonstrated in geometric terms, distribution of tension along a bolster maximizes closing force while at the same time reducing stress at the individual suture site. This technique also eliminates circumferential compression of the interceding tissues as well as providing easy access to the wound for daily care. These features make this technique ideal for patients at high risk of wound disruption.

Atlas of the distribution of monoamine-containing nerve cell bodies in the brain stem of the cat.

The distribution and morphological characteristics of monoamine (MA)-containing neuronal somata in the brain stem of kittens and of adult cats were studied by means of the Falck-Hillarp histofluorescence method. This investigation has shown, among other things, that in the midbrain of the cat the catecholamine (CA) perikarya are chiefly confined to the pars compacta of the substantia nigra, the ventromedial tegmental area, the nucleus linearis rostralis and the nucleus parabrachialis pigmentosus. Numerous CA neurons are also present in the dorsolateral part of the pontine tegmentum but also within the nucleus subcoeruleus, in nuclei lemnisci lateralis dorsalis and in nuclei parabrachialis lateralis and medialis. In the medulla, a few CA neuronal somata are lying near the hypoglossal nucleus whereas a larger number of CA cell bodies occur at the level of nucleus reticularis lateralis and in nucleus paragigantocellularis lateralis. On the other hand, most of the serotonin (5-HT) perikarya are confined to the raphe nuclei of the brain stem: nuclei raphe dorsalis, centralis superior, raphe pontis, raphe magnus, raphe pallidus and raphe obscurus. Some 5-HT neuronal somata are also found lateral to the pyramidal tract and to the inferior olivary complex. The various similarities and differences in respect to the pattern of the topographical distribution of MA neurons in the brain stem of the cat as compared to that of other mammals are discussed.

A fluorescence microscopic study of the distribution of monoamines in the hypothalamus of the cat.

Three distinct groups of monoamine (MA)-containing nerve cell bodies have been visualized in the hypothalamus and preoptic area of the cat by means of the Falck-Hillarp fluorescence histochemical technique. First, numerous small-sized catecholamine (CA) type neurons were disclosed within the ventral half of the periventricular area in the supraoptic and middle hypothalamic regions. The round to oval neurons of this medio-ventral group were more especially abundant around the base of the third ventricle, within the arcuate and supraopticus diffusus nuclei. Numerous medium-sized CA perikarya identified as the dorsal group, were also mapped out in the dorsal and posterior hypothalamic areas. Finally, a small population of both CA and serotonin (5-hydroxytryptamine, 5-HT)-containing neurons was disclosed within the lateral area of the middle and mammillary hypothalamic regions. These multipolar or elongated neurons which compose the lateral group were lying either along the ventrolateral surface of the hypothalamus or around the ventrolateral aspect of the fornix. In addition to these three MA cell groups, a few cells displaying a fluorescence of the CA type were also visualized in the so-called "dorsal chiasmatic nucleus" after alpha-methyl-dopa treatment. High density of CA axon terminals were found, on the other hand, in the extrenal layer of the median eminence, in the dorsomedial, paraventricular supraoptic and suprachiasmatic nuclei, and also within nucleus interstitialis of stria terminalis. In the present study, however, it was possible to identify with certainty any concentration of 5-HT axon terminals in the cat hypothalamus. Therefore, except for the lateral cell group which could be peculiar to the cat, the topographical distribution of MA nerve cell bodies and axon terminals in the hypothalamus of the cat appears similar to the morphological organization of the MA neuronal elements in the hypothalamus of the rat.