ABSTRACT
The surface-enhanced coherent anti-Stokes Raman scattering (SECARS) from a self-assembled monolayer (SAM) of benzenethiol on a silver-coated surface-enhanced Raman scattering (SERS) substrate has been measured for the 1574 cm(-1) SERS mode. A value of 9.6 ± 1.7×10(-14) W was determined for the resonant component of the SECARS signal using 17.8 mW of 784.9 nm pump laser power and 7.1 mW of 895.5 nm Stokes laser power; the pump and Stokes lasers were polarized parallel to each other but perpendicular to the grooves of the diffraction grating in the spectrometer. The measured value of resonant component of the SECARS signal is in agreement with the calculated value of 9.3×10(-14) W using the measured value of 8.7 ± 0.5 cm(-1) for the SERS linewidth Γ (full width at half-maximum) and the value of 5.7 ± 1.4×10(-7) for the product of the Raman cross section σSERS and the surface concentration Ns of the benzenethiol SAM. The xxxx component of the resonant part of the third-order nonlinear optical susceptibility |3 χxxxx((3)R)| for the 1574 cm(-1) SERS mode has been determined to be 4.3 ± 1.1×10(-5) cm·g(-1)·s(2). The SERS enhancement factor for the 1574 cm(-1) mode was determined to be 3.6 ± 0.9×10(7) using the value of 1.8×10(15) molecules/cm(2) for Ns.
ABSTRACT
Raman line widths of neat benzenethiol and a self-assembled monolayer (SAM) of benzenethiol on a surface-enhanced Raman scattering (SERS) substrate have been measured using a mini spectrometer with a resolution (full width at half-maximum) of 3.3 ± 0.2 cm(-1). Values of 7.3 ± 0.7, 4.6 ± 0.6, 2.4 ± 0.6, 3.2 ± 0.5, 8.8 ± 0.9, and 11.0 ± 1.1 cm(-1) have been determined for the Raman line widths of the 414, 700, 1001, 1026, 1093, and 1584 cm(-1) modes of neat benzenethiol. Values of 13.3 ± 0.7, 9.1 ± 0.7, 5.1 ± 0.6, 5.9 ± 0.6, 13.3 ± 0.5, and 8.7 ± 0.5 cm(-1) have been determined for the SERS line widths of a benzenethiol SAM on a silver-coated SERS substrate for the corresponding frequency-shifted modes at 420, 691, 1000, 1023, 1072, and 1574 cm(-1). The line widths for the SERS modes at 420, 691, 1000, 1023, and 1072 cm(-1) are about a factor of two larger than those of the corresponding Raman modes. However, the line width of the SERS mode at 1574 cm(-1) is slightly smaller than the corresponding Raman mode at 1584 cm(-1).
ABSTRACT
In this Paper we present growth and characterization results of highly oriented ZnO nanowires grown on wide bandgap GaN substrates. Experimental results on the ZnO nanowires grown on p-GaN are presented with growth morphology and dimensionality control. We also present experimental results on these nanowire arrays such as I-V measurements and UV sensitivity measurements. The ZnO nanowires can be used for a variety of nanoscale optical and electronics applications.
ABSTRACT
UV response of ZnO nanowire nanosensor has been studied under ambient condition. By utilizing Schottky contact instead of Ohmic contact in device fabrication, the UV sensitivity of the nanosensor has been improved by four orders of magnitude, and the reset time has been drastically reduced from approximately 417 to approximately 0.8 s. By further surface functionalization with function polymers, the reset time has been reduced to approximately 20 ms even without correcting the electronic response of the measurement system. These results demonstrate an effective approach for building high response and fast reset UV detectors.
ABSTRACT
We report an approach to fabricating patterned horizontal ZnO nanowire arrays with a high degree of control over their dimensionality, orientation, and uniformity. Our method combines electron beam lithography and a low temperature hydrothermal decomposition. This approach opens up possibilities to fabricate ZnO NW array based strain and force sensors, two-dimensional photonic crystals, integrated circuit interconnects, and alternative current nanogenerators.
