ABSTRACT
Hydroxylation and dissolution of well-structured silica bilayer films grown on a ruthenium single-crystal support (SiO2/Ru(0001)) was studied by temperature programmed desorption and X-ray photoelectron spectroscopy (XPS). Water desorption signals from SiO2/Ru(0001) hydroxylated by electron-bombardment of adsorbed ice at 100 K were found to be comparable to those of hydroxylated bulk silica samples and attributed to adsorbed molecular water and silanol groups (vicinal and terminal). Isotopic exchange between 18O-labeled SiO2 and 16O-labeled water suggests the occurrence of dynamic siloxane bond cleavage and re-formation during electron bombardment. Together with the observed strong dependence of hydroxylation activity on ice coverage, which is found to increase with increasing thickness of the ice layer, a hydroxylation mechanism based on the activation of siloxane bonds by water radiolysis products (e.g. hydroxyls) and subsequent water dissociation is proposed. Dissolution rates obtained from the attenuation of Si 2p and O 1s XPS signal intensities upon exposure of bilayer SiO2/Ru(0001) to alkaline conditions at various temperatures are in agreement with the proposed rate model for bulk silica dissolution by OH- attack and provide further corroboration of the proposed hydroxylation mechanism.
ABSTRACT
Water adsorption on a double-layer silicate film was studied by using infrared reflection-absorption spectroscopy, thermal desorption spectroscopy and scanning tunneling microscopy. Under vacuum conditions, small amounts of silanols (Si-OH) could only be formed upon deposition of an ice-like (amorphous solid water, ASW) film and subsequent heating to room temperature. Silanol coverage is considerably enhanced by low-energy electron irradiation of an ASW pre-covered silicate film. The degree of hydroxylation can be tuned by the irradiation parameters (beam energy, exposure) and the ASW film thickness. The results are consistent with a generally accepted picture that hydroxylation occurs through hydrolysis of siloxane (Si-O-Si) bonds in the silica network. Calculations using density functional theory show that this may happen on Si-O-Si bonds, which are either parallel (i.e., in the topmost silicate layer) or vertical to the film surface (i.e., connecting two silicate layers). In the latter case, the mechanism may additionally involve the reaction with a metal support underneath. The observed vibrational spectra are dominated by terminal silanol groups (ν(OD) band at 2763 cm(-1)) formed by hydrolysis of vertical Si-O-Si linkages. Film dehydroxylation fully occurs only upon heating to very high temperatures (â¼ 1200 K) and is accompanied by substantial film restructuring, and even film dewetting upon cycling hydroxylation/dehydroxylation treatment.
